ZnO-based Material, Heterojunction and Photoelctronic Device

SHEN De-zhen; MEI Zeng-xia; LIANG Hui-li; DU Xiao-long; YE Jian-dong; GU Shu-lin; WU Yu-xi

doi:10.3788/fgxb20143501.0001

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ZnO-based Material, Heterojunction and Photoelctronic Device

更新时间：2020-08-12

- ZnO-based Material, Heterojunction and Photoelctronic Device
- Chinese Journal of Luminescence Vol. 35, Issue 1, Pages: 1-60(2014)
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院清洁能源前沿研究重点实验室北京新能源材料与器件重点实验室中国科学院物理研究所北京凝聚态物理国家实验室北京,100190
  3. 南京大学电子科学与工程学院和南京微结构国家实验室(筹),江苏南京,210046
  4. 中国矿业大学物理学院,江苏徐州,221116
  5. 东南大学生物科学与医学工程学院生物电子学国家重点实验室,江苏南京,210096
  6. 中山大学光电材料与技术国家重点实验室,广东广州,510275
  7. 香港科技大学物理系,香港,999077
  8. 吉林大学电子科学与工程学院集成光子学国家重点实验室,吉林长春,130012
  9. 大连理工大学物理与光电工程学院,辽宁大连,116023
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20143501.0001
  CLC： O472.3;O472.4;TN248
- Published：3 January 2014，
  
  Received：25 October 2013，
  
  Revised：24 November 2013，
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申德振, 梅增霞, 梁会力等. 氧化锌基材料、异质结构及光电器件[J]. 发光学报, 2014,35(1): 1-60

SHEN De-zhen, MEI Zeng-xia, LIANG Hui-li etc. ZnO-based Material, Heterojunction and Photoelctronic Device[J]. Chinese Journal of Luminescence, 2014,35(1): 1-60
申德振, 梅增霞, 梁会力等. 氧化锌基材料、异质结构及光电器件[J]. 发光学报, 2014,35(1): 1-60 DOI： 10.3788/fgxb20143501.0001.

SHEN De-zhen, MEI Zeng-xia, LIANG Hui-li etc. ZnO-based Material, Heterojunction and Photoelctronic Device[J]. Chinese Journal of Luminescence, 2014,35(1): 1-60 DOI： 10.3788/fgxb20143501.0001.

摘要

Ⅱ-Ⅵ族直接带隙化合物半导体氧化锌（ZnO）的禁带宽度为3.37 eV，室温下激子束缚能高达60 meV，远高于室温热离化能（26 meV），是制造高效率短波长探测、发光和激光器件的理想材料。历经10年的发展，ZnO基半导体的研究在薄膜生长、杂质调控和器件应用等方面的研究获得了巨大的进展。本文主要介绍了以国家973项目（2011CB302000）研究团队为主体，在上述方面所取得的研究进展，同时概述国际相关研究，主要包括衬底级ZnO单晶的生长，ZnO薄膜的同质、异质外延，表面/界面工程，异质结电子输运性质、合金能带工程，p型掺杂薄膜的杂质调控，以及基于上述结果的探测、发光和激光器件等的研究进展。迄今为止，该团队已经实现了薄膜同质外延的二维生长、硅衬底上高质量异质外延、基于MgZnO合金薄膜的日盲紫外探测器、可重复的p型掺杂、可连续工作数十小时的同质结紫外发光管以及模式可控的异质结微纳紫外激光器件等重大成果。本文针对这些研究内容中存在的问题和困难加以剖析并探索新的研究途径，期望能对ZnO材料在未来的实际应用起到一定的促进作用。

Abstract

Zinc oxide (ZnO)

as a typical wide bandgap (3.37 eV) semiconductor

has abstracted increasing interests in optoelectronics field. Its large exciton binding energy of 60 meV endows it with high radiative recombination efficiency

which is a unique advantage in light emitting and lasing devices. After more than a decade of developments

the thin film growth

doping and the device study have achieved much improvement. In this review

we introduce a part of results on the above aspects in the last five years. In these improvements

the ones achieved by the "973" project group (2011CB302000) are shown in detail. So far

their jobs cover hertero-and homo-epitaxy of thin film

interface and surface engineering

carrier transport

energy engineering

p-type doping and optoelectronics devices. They have realized the 2-D growth of thin film

epitaxial growth on silicon

solar blind UV detector

LED with dozens-hour continual-operating time

and lasing device with controllable mode. These advancements are expected to accelerate the process of practical applications of ZnO.

关键词

氧化锌氧化镁锌外延薄膜表面/界面工程紫外探测器

Keywords

ZnOMgZnOmolecular beam epitaxysurface/interface engineeringultraviolet photodetector

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