Simulation Study of Ga-polar GaN based Inverted LED with Tunnel Junction
|更新时间:2026-10-13
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Simulation Study of Ga-polar GaN based Inverted LED with Tunnel Junction
Chinese Journal of LuminescencePages: 1-8(2026)
作者机构:
吉林大学 电子科学与工程学院、集成电路学院,集成光电子全国重点实验室, 吉林 长春 130012
作者简介:
基金信息:
Advanced Materials-National Science and Technology Major Project(2025ZD0615800);National Natural Science Foundation of China(U22A20134;U24A20300;62474080;62674094);Science and Technology Development Plan Project of Jilin Province(SKL202402002)
ZHAO Tong,ZUO Changcai,ZHAO Jingkai,et al.Simulation Study of Ga-polar GaN based Inverted LED with Tunnel Junction[J].Chinese Journal of Luminescence,DOI:10.3724/CJL.20260267 CSTR: 32170.14.CJL.20260267.
Simulation Study of Ga-polar GaN based Inverted LED with Tunnel Junction