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Realization of 520 nm Green Laser Diodes with InGaN/AlGaN/GaN Multiple Quantum Well Active Region
更新时间：2026-05-13

    • Realization of 520 nm Green Laser Diodes with InGaN/AlGaN/GaN Multiple Quantum Well Active Region

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    • Chinese Journal of Luminescence   Pages: 1-8(2026)

    • DOI：10.37188/CJL.20260147    

      CLC： Document
    • CSTR：32170.14.CJL.20260147    

    • Online First：13 May 2026，

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  • LI Xuan,LIU Jianping,TIAN Aiqin,et al.Realization of 520 nm Green Laser Diodes with InGaN/AlGaN/GaN Multiple Quantum Well Active Region[J].Chinese Journal of Luminescence, DOI：10.37188/CJL.20260147 CSTR： 32170.14.CJL.20260147.

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