Enhanced Properties of Heavily Mg-doped GaN by Combining Thermal Annealing Processes in NH<sub>3</sub>/N<sub>2</sub>

JIANG Zonglin; YAN Dan; ZHANG Ning; WEI Tongbo; WANG Junxi; WEI Xuecheng

doi:10.37188/CJL.20240130

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Enhanced Properties of Heavily Mg-doped GaN by Combining Thermal Annealing Processes in NH₃/N₂

Synthesis and Properties of Materials | 更新时间：2024-08-30

- Enhanced Properties of Heavily Mg-doped GaN by Combining Thermal Annealing Processes in NH₃/N₂
  增强出版
- Chinese Journal of Luminescence Vol. 45, Issue 8, Pages: 1325-1333(2024)
- 作者机构：
  
  1.中国科学院半导体研究所宽禁带半导体研发中心，北京 100083
  2.中国科学院大学材料科学与光电技术学院，北京 100049
- 作者简介：
- 基金信息：
  
  National Key R&D Program of China(2022YFF0705600);National Natural Science Foundation of China(62135013)
- DOI：10.37188/CJL.20240130
  CLC： O482.31
- Published：25 August 2024，
  
  Received：10 May 2024，
  
  Revised：19 May 2024，
- 稿件说明：
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蒋宗霖,闫丹,张宁等.NH₃/N₂复合热退火技术改善高浓度Mg掺杂GaN材料性能[J].发光学报,2024,45(08):1325-1333.

JIANG Zonglin,YAN Dan,ZHANG Ning,et al.Enhanced Properties of Heavily Mg-doped GaN by Combining Thermal Annealing Processes in NH₃/N₂[J].Chinese Journal of Luminescence,2024,45(08):1325-1333.
蒋宗霖,闫丹,张宁等.NH₃/N₂复合热退火技术改善高浓度Mg掺杂GaN材料性能[J].发光学报,2024,45(08):1325-1333. DOI： 10.37188/CJL.20240130.

JIANG Zonglin,YAN Dan,ZHANG Ning,et al.Enhanced Properties of Heavily Mg-doped GaN by Combining Thermal Annealing Processes in NH₃/N₂[J].Chinese Journal of Luminescence,2024,45(08):1325-1333. DOI： 10.37188/CJL.20240130.

摘要

研究了NH

复合热退火技术对高浓度Mg掺杂GaN材料晶体质量、发光性质及导电性能的影响。实验结果表明，相较于传统N

氛围高温热退火后处理工艺而言，NH

氛围高温热退火后处理工艺可以改善高浓度Mg掺杂GaN材料的晶体质量，同时可以增进Mg受主原子的有效掺杂，使得其光致发光谱中蓝光峰强度增强。采用NH

氛围高温热退火结合N

氛围低温热退火后处理工艺复合技术制备得到的高浓度Mg掺杂GaN材料内部背景电子浓度显著降低。这是由于在NH

氛围高温热退火后处理工艺中，NH

的热分解产物能够有效降低材料内N空位和间隙Ga原子等浅施主型缺陷浓度，最终改善高浓度Mg掺杂GaN材料的导电性能。

Abstract

The effect of a novel post-growth process，

i.e

. high-temperature thermal annealing process in NH

， on the crystal quality， luminescence property， and electrical conductivity of the heavily Mg-doped GaN was studied. The experimental results showed that， compared with the traditional high-temperature annealing process in N

， the high-temperature thermal annealing process in NH

can improve crystal quality in the heavily Mg-doped GaN， while promote the further effective doping of Mg acceptors， resulting in an enhancement of the intensity of the blue luminescence band in its photoluminescence spectra. The heavily Mg-doped GaN with significantly lower background electron concentration was obtained by combining high-temperature thermal annealing process in NH

with low-temperature thermal annealing process in N

. This is because that the thermal decomposition products of NH

in the post-growth process can effectively reduce the concentration of shallow donor-type defects such as N vacancies and interstitial Ga atoms in the material， ultimately improving electrical conductivity of the heavily Mg-doped GaN.

关键词

氮化镓Mg掺杂热退火工艺氨气

Keywords

gallium nitrideMg dopedthermal annealingammonia

references

MOUSTAKAS T D， PAIELLA R. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz ［J］. Rep. Progr. Phys.， 2017， 80（10）： 106501. doi: 10.1088/1361-6633/aa7bb2http://dx.doi.org/10.1088/1361-6633/aa7bb2

严嘉彬，孙志航，房力，等. 基于外延层转移的超薄垂直结构深紫外LED ［J］. 发光学报， 2023， 44（2）： 321-327. doi: 10.37188/CJL.20220305http://dx.doi.org/10.37188/CJL.20220305

YAN J B， SUN Z H， FANG L， et al. An ultra-thin vertical deep ultraviolet LED realized by epilayer transfer ［J］. Chin. J. Lumin.， 2023， 44（2）： 321-327. （in Chinese）. doi: 10.37188/CJL.20220305http://dx.doi.org/10.37188/CJL.20220305

AMANO H， KITO M， HIRAMATSU K， et al. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation （LEEBI）［J］. Jpn. J. Appl. Phys.， 1989， 28（12A）： L2112-L2114. doi: 10.1143/jjap.28.l2112http://dx.doi.org/10.1143/jjap.28.l2112

NAKAMURA S， MUKAI T， SENOH M， et al. Thermal annealing effects on P-type Mg-doped GaN films ［J］. Jpn. J. Appl. Phys.， 1992， 31（2B）： L139-L142. doi: 10.1143/jjap.31.l139http://dx.doi.org/10.1143/jjap.31.l139

KHAN A， BALAKRISHNAN K， KATONA T. Ultraviolet light-emitting diodes based on group three nitrides ［J］. Nat. Photon.， 2008， 2（2）： 77-84. doi: 10.1038/nphoton.2007.293http://dx.doi.org/10.1038/nphoton.2007.293

LIANG Y H， TOWE E. Progress in efficient doping of high aluminum-containing group III-nitrides ［J］. Appl. Phys. Rev.， 2018， 5（1）： 011107. doi: 10.1063/1.5009349http://dx.doi.org/10.1063/1.5009349

KNEISSL M， SEONG T Y， HAN J， et al. The emergence and prospects of deep-ultraviolet light-emitting diode technologies ［J］. Nat. Photon.， 2019， 13（4）： 233-244. doi: 10.1038/s41566-019-0359-9http://dx.doi.org/10.1038/s41566-019-0359-9

CHEN K， ZHAO J G， DING Y， et al. Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films ［J］. Chin. Phys. B， 2023， 33（1）： 016801. doi: 10.1088/1674-1056/acdc0bhttp://dx.doi.org/10.1088/1674-1056/acdc0b

NAM K B， NAKARMI M L， LI J， et al. Mg acceptor level in AlN probed by deep ultraviolet photoluminescence ［J］. Appl. Phys. Lett.， 2003， 83（5）： 878-880. doi: 10.1063/1.1594833http://dx.doi.org/10.1063/1.1594833

OBLOH H， BACHEM K H， KAUFMANN U， et al. Self-compensation in Mg doped p-type GaN grown by MOCVD ［J］. J. Cryst. Growth， 1998， 195（1-4）： 270-273. doi: 10.1016/s0022-0248(98)00578-8http://dx.doi.org/10.1016/s0022-0248(98)00578-8

MATTILA T， NIEMINEN R M. Point-defect complexes and broadband luminescence in GaN and AlN ［J］. Phys. Rev. B， 1997， 55（15）： 9571-9576. doi: 10.1103/physrevb.55.9571http://dx.doi.org/10.1103/physrevb.55.9571

REBOREDO F A， PANTELIDES S T. Novel defect complexes and their role in the p-type doping of GaN ［J］. Phys. Rev. Lett.， 1999， 82（9）： 1887-1890. doi: 10.1103/physrevlett.82.1887http://dx.doi.org/10.1103/physrevlett.82.1887

LYONS J L， VAN DE WALLE C G. Computationally predicted energies and properties of defects in GaN ［J］. npj Comput. Mater.， 2017， 3（1）： 12. doi: 10.1038/s41524-017-0014-2http://dx.doi.org/10.1038/s41524-017-0014-2

LYONS J L， JANOTTI A， VAN DE WALLE C G. Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors ［J］. J. Appl. Phys.， 2014， 115（1）： 012014. doi: 10.1063/1.4838075http://dx.doi.org/10.1063/1.4838075

HORITA M， TAKASHIMA S， TANAKA R， et al. Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations ［J］. Jpn. J. Appl. Phys.， 2017， 56（3）： 031001. doi: 10.7567/JJAP.56.031001http://dx.doi.org/10.7567/JJAP.56.031001

MOHAMMAD S N， BOTCHKAREV A E， SALVADOR A， et al. Proposed explanation of the anomalous doping characteristics of Ⅲ-Ⅴ nitrides ［J］. Philos. Mag. B， 1997， 76（2）： 131-143. doi: 10.1080/01418639708241083http://dx.doi.org/10.1080/01418639708241083

OKUMURA H， MARTIN D， MALINVERNI M， et al. Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy ［J］. Appl. Phys. Lett.， 2016， 108（7）： 072102. doi: 10.1063/1.4942369http://dx.doi.org/10.1063/1.4942369

YANG J， ZHAO D G， JIANG D S， et al. Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films ［J］. J. Appl. Phys.， 2014， 115（16）： 163704. doi: 10.1063/1.4873957http://dx.doi.org/10.1063/1.4873957

NAKAMURA S. Nobel lecture： background story of the invention of efficient blue InGaN light emitting diodes ［J］. Rev. Mod. Phys.， 2015， 87（4）： 1139-1151. doi: 10.1103/revmodphys.87.1139http://dx.doi.org/10.1103/revmodphys.87.1139

ZHANG C Y， ZHOU X L， KONG T， et al. Thermo-plasmonic assisted structural optimization of micro/nanocrystals based on single-particle spectroscopy ［J］. J. Mater. Chem. C， 2024， 12（8）： 2849-2858. doi: 10.1039/d3tc03739hhttp://dx.doi.org/10.1039/d3tc03739h

NAKAMURA S， IWASA N， SENOH M， et al. Hole compensation mechanism of P-type GaN films ［J］. Jpn. J. Appl. Phys.， 1992， 31（5R）： 1258-1266. doi: 10.1143/jjap.31.1258http://dx.doi.org/10.1143/jjap.31.1258

NAGAMORI M， ITO S， SAITO H， et al. Optimum rapid thermal activation of Mg-doped p-type GaN ［J］. Jpn. J. Appl. Phys.， 2008， 47（4S）： 2865-2867. doi: 10.1143/jjap.47.2865http://dx.doi.org/10.1143/jjap.47.2865

LIN C F， CHENG H C， CHANG C C， et al. Properties of Mg activation in thermally treated GaN∶Mg films ［J］. J. Appl. Phys.， 2000， 88（11）： 6515-6518. doi: 10.1063/1.1308097http://dx.doi.org/10.1063/1.1308097

ARIFF A， ZAINAL N， HASSAN Z. Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients ［J］. Superlattices Microstruct.， 2016， 97： 193-201. doi: 10.1016/j.spmi.2016.05.005http://dx.doi.org/10.1016/j.spmi.2016.05.005

GRECZYNSKI G， HULTMAN L. A step-by-step guide to perform X-ray photoelectron spectroscopy ［J］. J. Appl. Phys.， 2022， 132（1）： 011101. doi: 10.1063/5.0123879http://dx.doi.org/10.1063/5.0123879

NI R X， CHEN X， YAN J C， et al. Reducing stimulated emission threshold power density of AlGaN/AlN multiple quantum wells by Nano-trench-patterned AlN template ［J］. J. Alloys Compd.， 2019， 777： 344-349. doi: 10.1016/j.jallcom.2018.10.402http://dx.doi.org/10.1016/j.jallcom.2018.10.402

METZGER T， HÖPLER R， BORN E， et al. Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry ［J］. Philos. Mag. A， 1998， 77（4）： 1013-1025. doi: 10.1080/014186198254164http://dx.doi.org/10.1080/014186198254164

BILLEB A， GRIESHABER W， STOCKER D， et al. Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures ［J］. Appl. Phys. Lett.， 1997， 70（21）： 2790-2792. doi: 10.1063/1.119060http://dx.doi.org/10.1063/1.119060

HUMS C， FINGER T， HEMPEL T， et al. Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate ［J］. J. Appl. Phys.， 2007， 101（3）： 033113. doi: 10.1063/1.2434010http://dx.doi.org/10.1063/1.2434010

DEMCHENKO D O， DIALLO I C， RESHCHIKOV M A. Magnesium acceptor in gallium nitride. II. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of its dual nature and optical properties ［J］. Phys. Rev. B， 2018， 97（20）： 205205. doi: 10.1103/physrevb.97.205205http://dx.doi.org/10.1103/physrevb.97.205205

XU C L， LIU K Z， YU Z H， et al. 193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED ［J］. Appl. Phys. Lett.， 2023， 123（18）： 182103. doi: 10.1063/5.0169647http://dx.doi.org/10.1063/5.0169647

MAHBOOB I， VEAL T D， MCCONVILLE C F， et al. Intrinsic electron accumulation at clean InN surfaces ［J］. Phys. Rev. Lett.， 2004， 92（3）： 036804. doi: 10.1103/physrevlett.92.036804http://dx.doi.org/10.1103/physrevlett.92.036804

GUO L， WANG X Q， ZHENG X T， et al. Revealing of the transition from n- to p-type conduction of InN∶Mg by photoconductivity effect measurement ［J］. Sci. Rep.， 2014， 4（1）： 4371. doi: 10.1038/srep04371http://dx.doi.org/10.1038/srep04371

PONCÉ S， JENA D， GIUSTINO F. Hole mobility of strained GaN from first principles ［J］. Phys. Rev. B， 2019， 100（8）： 085204. doi: 10.1103/physrevb.100.085204http://dx.doi.org/10.1103/physrevb.100.085204

CHEN L C， CHEN F R， KAI J J， et al. Microstructural investigation of oxidized Ni/Au Ohmic contact to p-type GaN ［J］. J. Appl. Phys.， 1999， 86（7）： 3826-3832. doi: 10.1063/1.371294http://dx.doi.org/10.1063/1.371294

HO J K， JONG C S， CHIU C C， et al. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films ［J］. J. Appl. Phys.， 1999， 86（8）： 4491-4497. doi: 10.1063/1.371392http://dx.doi.org/10.1063/1.371392

王雪，刘乃鑫，王兵，等. AlGaN基深紫外LED的NiAu透明电极及其接触特性［J］. 发光学报， 2023， 44（5）： 898-903. doi: 10.37188/cjl.20220385http://dx.doi.org/10.37188/cjl.20220385

WANG X， LIU N X， WANG B， et al. Ohmic contact characteristics of AlGaN-based deep-ultraviolet light-emitting-diodes with NiAu transparent electrode ［J］. Chin. J. Lumin.， 2023， 44（5）： 898-903. （in Chinese）. doi: 10.37188/cjl.20220385http://dx.doi.org/10.37188/cjl.20220385

GRODZICKI M， MAZUR P， CISZEWSKI A. Changes of electronic properties of p-GaN（0 0 0 1） surface after low-energy N+-ion bombardment ［J］. Appl. Surf. Sci.， 2018， 440： 547-552. doi: 10.1016/j.apsusc.2018.01.097http://dx.doi.org/10.1016/j.apsusc.2018.01.097

MAHAT M R， TALIK N A， RAHMAN M NABD， et al. Electronic surface， optical and electrical properties of p- GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED ［J］. Mater. Sci. Semicond. Process.， 2020， 106： 104757. doi: 10.1016/j.mssp.2019.104757http://dx.doi.org/10.1016/j.mssp.2019.104757

LIN Y J， CHU Y L. Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p-type GaN ［J］. J. Appl. Phys.， 2005， 97（10）： 104904. doi: 10.1063/1.1894580http://dx.doi.org/10.1063/1.1894580

MOON Y T， KIM D J， PARK J S， et al. Recovery of dry-etch-induced surface damage on Mg-doped GaN by NH3 ambient thermal annealing ［J］. J. Vacuum Sci. Technol. B， 2004， 22（2）： 489-491. doi: 10.1116/1.1645882http://dx.doi.org/10.1116/1.1645882

ZHAO Y F， GAO H W， HUANG R， et al. Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-ray photoemission spectroscopy ［J］. Sci. Rep.， 2019， 9（1）： 16969. doi: 10.1038/s41598-019-53236-9http://dx.doi.org/10.1038/s41598-019-53236-9

GRODZICKI M. Properties of thin film-covered GaN（0001） surfaces ［J］. Mater. Proc.， 2020， 2（1）： 30.

BUI K M， IWATA J I， KANGAWA Y， et al. Reaction pathway of surface-catalyzed ammonia decomposition and nitrogen incorporation in epitaxial growth of gallium nitride ［J］. J. Phys. Chem. C， 2018， 122（43）： 24665-24671. doi: 10.1021/acs.jpcc.8b05682http://dx.doi.org/10.1021/acs.jpcc.8b05682

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Enhanced Properties of Heavily Mg-doped GaN by Combining Thermal Annealing Processes in NH3/N2

DOI：10.37188/CJL.20240130

摘要

Abstract

关键词

Keywords

references

Enhanced Properties of Heavily Mg-doped GaN by Combining Thermal Annealing Processes in NH₃/N₂