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Near-infrared Luminescence of Li（Sc, M）Si2O6∶Cr3+（M = Ga3+/Lu3+/Y3+/Gd3+）
Synthesis and Properties of Materials | 更新时间：2024-04-08
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    • Near-infrared Luminescence of Li（Sc, M）Si2O6∶Cr3+（M = Ga3+/Lu3+/Y3+/Gd3+）

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    • “科技新闻播报：荧光转换型近红外发光二极管（NIR pc⁃LED）因其体积小、谱带宽、峰位易调谐等优点，已成为新一代NIR光源研究的热点。其关键要素在于研发能够被蓝光有效激发的高效宽带近红外荧光粉。研究者们在LiScSi2O6∶Cr3+荧光材料上取得了重要突破。这种材料的激发波长为460 nm，发射峰位在845 nm，光谱带宽达到156 nm，内量子效率高达64.4%。为了进一步优化这种材料的性能，研究者们通过M离子（M = Ga3+，Lu3+，Y3+，Gd3+）取代Sc3+的方式进行调控。然而，实验结果显示，引入M离子容易生成杂相或发生相变，从而降低了材料的发光性能。研究者们从晶体结构的角度出发，深入分析了这一调控过程，为未来的研究提供了新的思路和方向。这项研究成果不仅为NIR pc⁃LED的发展提供了重要的材料基础，也为相关领域的科学研究和技术应用带来了新的可能性。未来，随着对这一材料性能的进一步优化和完善，NIR pc⁃LED有望在更多领域展现出广阔的应用前景。”
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    • Chinese Journal of Luminescence   Vol. 45, Issue 3, Pages: 407-414(2024)

    • DOI：10.37188/CJL.20230325    

      CLC： O482.31

    • Published：05 March 2024，

      Received：19 December 2023，

      Revised：01 January 2024，

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  • LU Ziwei,LIU Yongfu,LUO Zhaohua,et al.Near-infrared Luminescence of Li（Sc, M）Si2O6∶Cr3+（M = Ga3+/Lu3+/Y3+/Gd3+）[J].Chinese Journal of Luminescence,2024,45(03):407-414. DOI： 10.37188/CJL.20230325.

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