Near Diffraction Limit High-brightness 850 nm Tapered Laser Diodes

YANG Ye; LIU Yun; ZHANG Jin-long; LI Zai-jin; SHAN Xiao-nan; WANG Li-jun

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Near Diffraction Limit High-brightness 850 nm Tapered Laser Diodes

paper | 更新时间：2020-08-12

- Near Diffraction Limit High-brightness 850 nm Tapered Laser Diodes
- Chinese Journal of Luminescence Vol. 32, Issue 10, Pages: 1064-1068(2011)
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
  3. 中国科学院苏州生物医学工程技术研究所,江苏苏州,215163
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Published：22 October 2011，
  
  Published Online：22 October 2011，
  
  Received：2 April 2011，
  
  Revised：30 May 2011，
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杨晔, 刘云, 张金龙, 李再金, 单肖楠, 王立军. 850 nm高亮度近衍射极限锥形半导体激光器[J]. 发光学报, 2011,32(10): 1064-1068

YANG Ye, LIU Yun, ZHANG Jin-long, LI Zai-jin, SHAN Xiao-nan, WANG Li-jun. Near Diffraction Limit High-brightness 850 nm Tapered Laser Diodes[J]. Chinese Journal of Luminescence, 2011,32(10): 1064-1068
杨晔, 刘云, 张金龙, 李再金, 单肖楠, 王立军. 850 nm高亮度近衍射极限锥形半导体激光器[J]. 发光学报, 2011,32(10): 1064-1068 DOI：

YANG Ye, LIU Yun, ZHANG Jin-long, LI Zai-jin, SHAN Xiao-nan, WANG Li-jun. Near Diffraction Limit High-brightness 850 nm Tapered Laser Diodes[J]. Chinese Journal of Luminescence, 2011,32(10): 1064-1068 DOI：

摘要

制备了具有低红暴优势的850 nm大功率高亮度锥形半导体激光器

获得了近衍射极限的激光输出。当连续输出功率为200 mW时

光束质量因子M

仅为1.7

亮度高达16.3 MWcm

-2

-1

;当功率提高到1 W时

因子和亮度仍分别达到2.8和9.9 MWcm

-2

-1

。此外

研究了锥形激光器的功率、光谱、远场分布等特性

并分析了不同脊形波导长度对锥形激光器自聚焦现象的影响。

Abstract

High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured

and the beam quality of near diffraction limit has been achieved. The beam propagation factor

is only 1.7 and the high brightness is up to 16.3 MWcm

-2

-1

when the output power is 200 mW

and the values change to 2.8 and 9.9 MWcm

-2

-1

under 1 W output. The electro-optical properties of tapered lasers are discussed. We have also studied the influence of tapered section length on output power. The results reported in this paper may become a step forward to new applications of tapered laser diodes.

关键词

850 nm锥形激光器高亮度光束质量因子M2

Keywords

850 nmtapered laser diodehigh brightnessthe beam propagation factor M2

references

Liang Xuemei, Lv Jinka, Cheng Liwen, et al. Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm [J]. Chin. J. Lumin. (发光学报), 2010, 31 (1):79-84 (in English).[2] Cheng Liwen, Liang Xuemei, Qin Li, et al. Theoretical analysis of key parameters of 980 nm optically pumped semiconductor vertical external cavity surface emitting laser [J]. Chin. J. Lumin. (发光学报), 2008, 29 (4):713-715 (in Chinese).[3] Liu Yun, Liao Xinsheng, Qin Li, et al. Oxygen-free copper microchannel heat sink of high power semiconductor laser [J]. Chin. J. Lumin. (发光学报), 2005, 26 (1):109-114 (in Chinese).[4] Zhu Liyan, Fu Xiuhua. The technical development of the 850 nm high-luminance semiconductor laser's film [J]. Journal of Changchun University of Science and Technology (长春理工大学学报), 2007, 30 (1):18-20 (in Chinese).[5] Qu Zhou, Liu Yang, Liu Bo. High power semiconductor laser and its applications in military [J]. OME Information (光机电信息), 2006(1):52-55 (in Chinese).[6] Dittmar F, Klehr A, Sumpf B, et al. 9 W output power from an 808 nm tapered diode laser in pulse mode operation with nearly diffraction-limited beam quality [J]. IEEE Quantum Electronics, 2007, 13 (5):1194-1199.[7] Kelemen M T, Weber J, Bihlmann G, et al. Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power [J]. Electronics Letters, 2005, 41 (18):1011-1013.[8] Hocker G B, Burns W K. Mode dispersion in diffused channel waveguides by the effective index method [J]. Applied Optics, 1977, 16 (1):113-118.[9] Burns W K, Milton A F, Lee A B. Optical waveguide parabolic coupling horns [J]. Appl. Phys. Lett., 1977, 30 (1):28-30.[10] Walpole J N, Kintzer E S, Chinn S R, et al. High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier [J]. Appl. Phys. Lett., 1992, 61 (7):740-742.[11] Goldberg L, Surette M, Mehuys D. Filament formation in a tapered GaAlAs optical amplifier [J]. Appl. Phys. Lett.,1993, 62 (19):2304-2306.

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Related Institution

College of Physics and Information Engineering， Fuzhou University

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China

Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China

State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

University of Chinese Academy of Sciences, Beijing 100049, China

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