WANG Lei, XU Hai-yang, LI Xing-hua, LIU Yi-chun. Optical and Electrical Properties of p-type ZnO∶N Films Grown by N-plasma Assisted Pulsed Laser Deposition[J]. Chinese Journal of Luminescence, 2011,32(10): 977-982
WANG Lei, XU Hai-yang, LI Xing-hua, LIU Yi-chun. Optical and Electrical Properties of p-type ZnO∶N Films Grown by N-plasma Assisted Pulsed Laser Deposition[J]. Chinese Journal of Luminescence, 2011,32(10): 977-982DOI:
Optical and Electrical Properties of p-type ZnO∶N Films Grown by N-plasma Assisted Pulsed Laser Deposition
Nitrogen-doped ZnO (ZnO∶N) films were grown by N-plasma assisted pulsed laser deposition. The p-type conductivities were achieved by post low-temperature rapid thermal annealing (RTA). The N chemical states
optical and electrical properties of ZnO∶N films were systematically studied by X-ray photoelectron spectroscopy (XPS)
photoluminescence (PL) and Hall measurements. The results revealed that the obtained p-type ZnO∶N films are highly compensated semiconductor
and the RTA process can activate more N acceptors and reduce the self-compensation of intrinsic donor defects. Three N acceptor-related emissions were observed in low-temperature PL spectra. The ionization energy of N acceptor was determined as about 128 meV from free-electron-to-acceptor (FA) transition. Interestingly
donor-acceptor pair (DAP) emission showed a slight redshift with increasing annealing temperature. This phenomenon was understood in terms of a potential fluctuation model.
关键词
p型ZnO∶N薄膜PLD光学和电学性质
Keywords
p-typeZnO∶N filmsPLDoptical and electrical properties
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