LI Ai-xia, BI Hong, LIU Yan-mei, WU Ming-zai. Structure and Optical Properties of (Co,Cu)-codoped ZnO Thin Films[J]. Chinese Journal of Luminescence, 2008,29(2): 289-293
LI Ai-xia, BI Hong, LIU Yan-mei, WU Ming-zai. Structure and Optical Properties of (Co,Cu)-codoped ZnO Thin Films[J]. Chinese Journal of Luminescence, 2008,29(2): 289-293DOI:
Structure and Optical Properties of (Co,Cu)-codoped ZnO Thin Films
wide and direct band gap semiconductors have been intensively studied for their application as blue and ultraviolet light emitters. As a wide gap semiconductor
ZnO has a wide band gap of 3.37 eV and a large binding energy of 60 meV. Therefore
ZnO is considered as one of the most pro-mising candidates for short wavelength optoelectronics devices
and it is very important to conduct further studies of the properties of ZnO thin films.(Co
Cu)-codoped ZnO thin films
Zn
0.85-x
Co
0.15
Cu
x
O(x=0
0.04
0.06)thin films were deposited on silicon(111) substrates by e-beam evaporation.The structure of Zn
0.85-x
Co
0.15
Cu
x
O thin films were investigated using X-ray diffractometer (XRD). Photoluminescent (PL) spectra were measured with Xe lamp excitation light source at room temperature
the excited wavelength was 325 nm.The photoluminescence spectrum reveals that with the increase of doping content of Cu
the emission intensity of Zn
0.85-x
Co
0.15
Cu
x
O thin films was enhanced. Moreover
with x=0.06
strong blue double emission peaks were got at 449 nm and at 477 nm for the Zn
0.85-x
Co
0.15
Cu
x
O thin films. The luminescence mechanism was also discussed in this paper
The experiments prove that the blue emission is due to transition of electrons from the bottom of the conductor band to zinc vacancy VZn or interstitial zinc Zni to the top of valence band.
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