High Quality MgxZn1-xO Films Fabricated by Electron Beam Evaporation Combined with Heat Treatment

DONG Li-pu; LIU Yu-xue; XU Chang-shan; LIU Yi-chun; LI Ya-jun

doi:null

您当前的位置：

首页 >

文章列表页 >

High Quality Mg_xZn_1-xO Films Fabricated by Electron Beam Evaporation Combined with Heat Treatment

更新时间：2020-08-12

- High Quality Mg_xZn_1-xO Films Fabricated by Electron Beam Evaporation Combined with Heat Treatment
- Chinese Journal of Luminescence Vol. 29, Issue 2, Pages: 313-317(2008)
- 作者机构：
  
  东北师范大学, 先进光电子功能材料研究中心,吉林长春,130024
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Published：20 March 2008，
  
  Received：20 October 2007，
  
  Revised：24 November 2007，
扫描看全文
董利普, 刘玉学, 徐长山, 刘益春, 李亚军. 电子束蒸发结合热处理方法制备高质量MgxZn1-xO薄膜[J]. 发光学报, 2008,29(2): 313-317

DONG Li-pu, LIU Yu-xue, XU Chang-shan, LIU Yi-chun, LI Ya-jun. High Quality MgxZn1-xO Films Fabricated by Electron Beam Evaporation Combined with Heat Treatment[J]. Chinese Journal of Luminescence, 2008,29(2): 313-317
董利普, 刘玉学, 徐长山, 刘益春, 李亚军. 电子束蒸发结合热处理方法制备高质量MgxZn1-xO薄膜[J]. 发光学报, 2008,29(2): 313-317 DOI：

DONG Li-pu, LIU Yu-xue, XU Chang-shan, LIU Yi-chun, LI Ya-jun. High Quality MgxZn1-xO Films Fabricated by Electron Beam Evaporation Combined with Heat Treatment[J]. Chinese Journal of Luminescence, 2008,29(2): 313-317 DOI：

摘要

利用电子束蒸发结合热处理方法在150℃下

石英衬底上生长了纤锌矿结构的Mg

1-x

O薄膜。用X射线衍射(XRD)

扫描电镜(SEM)

吸收光谱和室温光致发光(PL)光谱研究了退火条件和降温方式对Mg

1-x

O薄膜的微结构和光学性质的影响。在吸收光谱中

吸收边和吸收峰的蓝移说明:通过改变退火条件和降温方式

可以将Mg

1-x

O薄膜的带隙从3.37eV提高到3.61eV。从SEM的结果得出:吸收边和吸收峰的蓝移不是由量子限制效应引起的

而是形成了Mg

1-x

O合金薄膜。在XRD谱图中

没观察到属于MgO的衍射峰

700℃退火快速降温至室温薄膜的衍射峰的半高全宽(FWHM)较其他薄膜的衍射峰有所展宽

说明Mg

已经成功地取代了ZnO中的Zn

。薄膜的室温光致发光谱说明:通过采用快速降温

可制得高质量的Mg

1-x

O薄膜。

Abstract

Recently

much attention has been paid to wurtzite Mg

1-x

O alloys as a promising candidate for applications in optoelectronic devices in the ultraviolet region. ZnO is a wide-band-gap semiconductor with a direct gap of ~3.37 eV. The band gap becomes even larger if Zn atoms are substituted by Mg atoms

which have a similar ionic radius

allowing the construction of ZnO/Mg

1-x

O quantum-well and superlattice devices. One of the important problems that limits the fabrication of Mg

1-x

O alloy is the fact that the thermodynamic solubility limit of MgO in ZnO is about 4%. The problem of Mg concentration in ZnO is excess of 4% without phase segregation is important and necessary to be studied in details.In this paper

1-x

O films with wurtzite-type structure were fabricated on quartz substrates at 150℃ by electron beam evaporation (EBE) using Mg

0.15

0.85

O target combined with heat treatment. The depen-dence of the microstructure and optical properties of Mg

1-x

O films on the annealing conditions and cooling modes has been investigated using X-ray diffraction (XRD)

scanning electron microscope (SEM)

absorption and photoluminescence (PL) spectra. In the XRD spectra

no diffraction peaks belonging to MgO were observed. The results showed that Mg

1-x

O films were single wurtzite-type structure. The increasing band gap is not due to quantum confinement effect according to SEM images

but attributed to the formation of Mg

1-x

O alloy films. In the absorption spectra

the blueshift of absorption edges and absorption peaks indicated that the band gap of Mg

1-x

O films was tuned from 3.37 eV to 3.61 eV by changing annealing conditions and cooling modes. As it can be seen

the full-width at half-maximum of the XRD peak for Mg

1-x

O films annealed at 700℃ followed with rapid cooling increases

which indicated the Zn

ions in ZnO lattice were successfully substituted by Mg

ions. Accordingly

an evident blueshift is observed in photoluminescence spectra for the Mg

1-x

O films annealed at 700℃ followed with rapid cooling

and the PL intensity of near-band-edge (NBE) emission is much higher than that of its visible emission

showing that high quality Mg

1-x

O films were obtained.We controlled on the Mg

concentration by changing annealing conditions and cooling modes. By using rapid cooling at high annealing temperature

the high-quality Mg

1-x

O films were achieved. The fabrication of high-quality Mg

1-x

O films makes it possible to obtain light detecting and emitting devices in the UV region.

关键词

MgxZn1-xO薄膜电子束蒸发光学性质

Keywords

MgxZn1-xO filmselectron beam evaporationoptical property

references

Makino T,Chia C H,Tuan N T,et al.Room-temperature luminescence of excitons in ZnO/(Mg,Zn)O multiple quantum wells on lattice-matched substrates[J].Appl.Phys.Lett.,2000,77(7):975-977.

Makino T,Tuan N T,Sun H D,et al.Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn)O multiple quantum wells[J].Appl.Phys.Lett.,2001,78(14):1979-1981.

Chia C H,Makino T,Tamura K,et al.Confinement-enhanced biexciton binding energy in ZnO/ZnMgO multiple quantum wells[J].Appl.Phys.Lett.,2003,82(12):1848-1850.

Ohtomo A,Kawasaki M,Koida T,et al.MgxZn1-xO as a Ⅱ-Ⅵ widegap semiconductor alloy[J].Appl.Phys.Lett.,1998,72(19):2466-2468.

Muthukumar S,Zhong J,Chen Y,et al.Growth and structural analysis of metalorganic chemical vapor deposited (1120) MgxZn1-xO (0[6] Park W I,Yi G C,Jang H M.Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO(0≤x≤0.49) thin films[J].Appl.Phys.Lett.,2001,79(13):2022-2024.

Liu Wei,Gu Shulin,Zhu Shunmin,et al.The deposition and annealing study of MOCVD ZnMgO[J].J.Cryst.Growth,2005,277(1-4):416-421.

Heitsch S,Zimmermann G,Fritsch D,et al.Luminescence and surface properties of MgxZn1-xO thin films grown by pulsed laser deposition[J].J.Appl.Phys.,2007,101(8):08352-1-6.

Misra P,Sharma T K,Porwal S,et al Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition[J].Appl.Phys.Lett.,2006,89(16):161912-1-3.

Schmidt R,Rheinla under B,Schubert M,et al.Dielectric functions (1 to 5 eV) of wurtzite MgxZn1-xO (x≤0.29) thin films[J].Appl.Phys.Lett.,2003,82(14):2260-2262.

Bundesmann C,Schubert M,Spemann D,et al.Infrared dielectric functions and phonon modes of wurtzite MgxZn1-xO (x≤0.2)[J].Appl.Phys.Lett.,2002,81(13):2376-2378.

Bundesmann C,Schubert M,Rahm A,et al.Infrared dielectric function and phonon modes of Mg-rich cubic MgxZn1-xO(x≥0.67) thin films on sapphire (0001)[J].Appl.Phys.Lett.,2004,85(6):905-907.

Teng C W,Muth J F,Ozgür U,et al.Refractive indices and absorption coefficients of MgxZn1-xO alloys[J].Appl.Phys.Lett.,2000,76(8):979-981.

Shibata H,Tampo H,Matsubara K,et al.Photoluminescence characterization of Zn1-xMgxO epitaxial thin films grown on ZnO by radical source molecular beam epitaxy[J].Appl.Phys.Lett.,2007,90(12):124104-1-4.

Koike K,Hama K,Nakashima I,et al.Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications[J].J.Cryst.Growth,2005,278(1-4):288-292.

Ogata K,Koike K,Tanite T,et al.ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy[J].J.Cryst.Growth,2003,251(1-4):623-627.

Chen J,Shen W Z,Chen N B,et al.The study of composition non-uniformity in ternary MgxZn1-xO thin films[J].J.Phys.Condens.Matter.,2003,15(30):L475-L482.

Suchand Sandeep C S,Philip Reji,Satheeshkumar R,et al.Sol-gel synthesis and nonlinear optical transmission in Zn1-xMgxO (x≤0.2) thin films[J].Appl.Phys.Lett.,2006,89(6):063102-1-3.

Lorenz M,Kaidashev E M,Rahm A,et al.MgxZn1-xO(0≤x《0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition[J].Appl.Phys.Lett.,2005,86(14):143113-1-3.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Surface-enhanced Raman Scattering Based on Silicon Nanostructures

Abnormal Localized Field in Double Layers Heterostructure with Lossy Single-negative Materials

Effects of Zn Vacancy and Cu-doping Impurity on Electronic Structure and Optical Properties in ZnTe

Structural and Optical Properties of Mg_xZn_1-xO Thin Films Prepared by Sol-gel Method

Field Emission Characteristics of LaB₆ Film

Related Author

LI Chao-bo

XIA Yang

WANG Huan

FU Ting-zhao

CUI Shao-hui

DENG Fu-sheng

DONG Li-juan

SHI Tai-xia

Related Institution

Institute of Microelectronics of Chinese Academy of Sciences

University of Chinese Academy of Sciences

Beijing Key Laboratory of IC Test Technology

Shanxi Provincial Key Laboratory of Electromagnetic Functional Materials for Microstructure, Shanxi Datong University

School of Materials Science and Engineering, Taiyuan University of Technology

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰