GAO Jin-hai, YAO Ning, ZHANG Bing-lin, WANG Ying-jian. Growth and Field Emission Properties of Globe-like Diamond Microcrystalline-aggregate[J]. Chinese Journal of Luminescence, 2008,29(2): 393-397
GAO Jin-hai, YAO Ning, ZHANG Bing-lin, WANG Ying-jian. Growth and Field Emission Properties of Globe-like Diamond Microcrystalline-aggregate[J]. Chinese Journal of Luminescence, 2008,29(2): 393-397DOI:
Growth and Field Emission Properties of Globe-like Diamond Microcrystalline-aggregate
Carbon based materials with a low or negative electron affinity
such as diamond
diamond-like carbon (DLC)
amorphous carbon (a-C)
were widely used as cold cathode. Diamond films were generally deposited on the substrates by using chemical vapor deposition (CVD)
introducing a hydrocarbon gas diluted with an amount of hydrogen gas. There were a limited number of reports dealing with the field emission characteristics of the globe-like diamond microcrystalline aggregates. The globe-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method in the high methane concentration of H
2
/CH
4
=100/10 sccm using a microwave plasma CVD system in our laboratory. The cera-mic with a Ti mental layer was used as substrate. The fabricated diamond aggregates were evaluated by Raman scattering spectroscopy
scanning electron microscopy (SEM)
X-ray diffraction (XRD). It concluded that the globe-like diamond microcrystalline-aggregates are composed of diamond.The field emission properties were tested by using a diode structure in a vacuum chamber. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the globe-like diamond microcrystalline-aggregate exhibited good electron emission properties. The turn-on field was only 0.55 V/μm
and emission current density as high as 11 mA/cm
2
was obtained under an applied field of 2.18 V/μm. At the successive operation circles
the turn-on field tends to stabilize at 1.6 V/μm and the current density of 1.1 mA/cm2 is obtained at an electric field of 2.9 V/μm. The Fowler-Nordheim (F-N) plots of the field emission are almost straight line
which indicates that the mechanism of the electron emission from the diamond microcrystalline-aggregate is linked to field emission by tunnel effect. The growth mechanism and field emission properties of the globe-like diamond microcrystalline-aggregates are discussed relating to microstructure and electrical conductivity. We think that the good emission properties of the diamond aggregates are considered to be combined results from the lots of the grain boundaries in the diamonds microcrystalline-aggregates and the emission enhance factor is very high as β=1 328.2.
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