Investigation on Optical and Micro-structural Properties of InxGa1-xN Alloys Grown by MOCVD

ZHU You-zhang; CHEN Guang-de; YUAN Jin-she

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Investigation on Optical and Micro-structural Properties of In_xGa_1-xN Alloys Grown by MOCVD

更新时间：2020-08-12

- Investigation on Optical and Micro-structural Properties of In_xGa_1-xN Alloys Grown by MOCVD
- Chinese Journal of Luminescence Vol. 29, Issue 2, Pages: 318-324(2008)
- 作者机构：
  
  1. 西安交通大学, 应用物理系,陕西西安,710049
  2. 第二炮兵工程学院, 物理教研室,陕西西安,710025
  3. 重庆师范大学, 应用物理系重庆,400047
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3;O482.31
- Published：20 March 2008，
  
  Received：14 July 2007，
  
  Revised：9 January 2008，
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竹有章, 陈光德, 苑进社. MOCVD生长InxGa1-xN合金微观结构和光学特性[J]. 发光学报, 2008,29(2): 318-324

ZHU You-zhang, CHEN Guang-de, YUAN Jin-she. Investigation on Optical and Micro-structural Properties of InxGa1-xN Alloys Grown by MOCVD[J]. Chinese Journal of Luminescence, 2008,29(2): 318-324
竹有章, 陈光德, 苑进社. MOCVD生长InxGa1-xN合金微观结构和光学特性[J]. 发光学报, 2008,29(2): 318-324 DOI：

ZHU You-zhang, CHEN Guang-de, YUAN Jin-she. Investigation on Optical and Micro-structural Properties of InxGa1-xN Alloys Grown by MOCVD[J]. Chinese Journal of Luminescence, 2008,29(2): 318-324 DOI：

摘要

利用发光光谱、X射线衍射(XRD)、原子力显微(AFM)等实验方法对MOCVD生长的In

1-x

N合金进行了研究。原子力显微图样表明样品表面出现纳米尺度为微岛状结构。样品PL和PLE谱表明

其主要吸收峰位于波长为365

474nm

发光峰的位置位于波长为545

493nm处

其中545nm发光峰半高宽较493nm发光峰宽

这两个峰分别起源于In(Ga)N浸润层和InGaN层发光

浸润层局域化激子和岛状微观结构弛豫特性是产生发光峰Stokes移动的重要原因。

Abstract

The photoluminescence (PL) and photoluminescence excitation spectra (PLE) of selected In

1-x

N samples grown by metal organic chemical vapor deposition (MOCVD) have been investigated

and the analysis of structural and optical behaviors has been taken to study the existence of the microstructure InGaN alloys on the basis of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements.XRD reveals that the sample is a single crystalline In

1-x

N film formed predominantly in (0002) direction

the In mole composition x in In

1-x

N film is calculated to be about 0.2 according to the Bragg's angle of In

1-x

N (0002). The AFM plane-view and 3D images of the selected In

0.2

0.8

N sample show almost uniform island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. The islands composed of the grapes-like have an average height of 10 nm at most and a mean size of 300 nm. The self-organized microstructure appeared to form cone and/or pyramid shape and tended to agglomerate island-like surface with RMS roughness about 10 nm

which attributed to Stranski-Krastanov growth mechanism. The comparison between PLE and PL under different exciting or monitoring energy allows determining the existence of wetting layer (WL)in the sample. The PLE and PL measurements show that the resonant absorption is related to the band gap and wetting layer of the alloy at different exciting and monitoring energy. It has been found that PLE peaks of the In

0.2

0.8

N alloy are dominated by 365 nm and 474 nm with monitoring wavelength 545 nm and 493 nm; the broad 545 nm and narrow 493 nm emission peaks are originated from In(Ga)N wetting layer and InGaN region respectively. The structural and optical analyses suggest that the origin of the exciton localization center is the self-formed islands. Hence

the irrelevancy of the PL spectra to the gap energy was explained in terms of fluctuation resulting from variations in grain size or shape. This type of localized center provides another physical model for the proposed localized states in In

1-x

N epilayers. Further characterization of the InGaN systems is underway to help fully understand the correlation between the structural and the optical pro-perties of self-organized micro-structure of InGaN system.

关键词

InGaNMOCVDAFM发光谱激发谱

Keywords

InGaNMOCVDAFMphotoluminescence spectraphotoluminescence excitation spectra

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