Modification Effect of NPB Film Thickness on Charge Carrier Recombination Zone of Heterostructure OLEDs

LI Lu; YU Jun-sheng; LI Wei-zhi; LI Wei; JIANG Ya-dong

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Modification Effect of NPB Film Thickness on Charge Carrier Recombination Zone of Heterostructure OLEDs

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- Modification Effect of NPB Film Thickness on Charge Carrier Recombination Zone of Heterostructure OLEDs
- Chinese Journal of Luminescence Vol. 28, Issue 3, Pages: 341-344(2007)
- 作者机构：
  
  电子科技大学, 光电信息学院, 电子薄膜与集成器件国家重点实验室, 四川, 成都, 610054
- 作者简介：
  
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- 基金信息：
- DOI：
  CLC： TN383.1
- Published：20 May 2007，
  
  Received：20 July 2006，
  
  Revised：23 November 2006，
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李璐, 于军胜, 黎威志, 李伟, 蒋亚东. NPB厚度对异质结OLED载流子复合区域的调控[J]. 发光学报, 2007,28(3): 341-344

LI Lu, YU Jun-sheng, LI Wei-zhi, LI Wei, JIANG Ya-dong. Modification Effect of NPB Film Thickness on Charge Carrier Recombination Zone of Heterostructure OLEDs[J]. Chinese Journal of Luminescence, 2007,28(3): 341-344
李璐, 于军胜, 黎威志, 李伟, 蒋亚东. NPB厚度对异质结OLED载流子复合区域的调控[J]. 发光学报, 2007,28(3): 341-344 DOI：

LI Lu, YU Jun-sheng, LI Wei-zhi, LI Wei, JIANG Ya-dong. Modification Effect of NPB Film Thickness on Charge Carrier Recombination Zone of Heterostructure OLEDs[J]. Chinese Journal of Luminescence, 2007,28(3): 341-344 DOI：

摘要

通过调控p型半导体N

N′-bis(naphthalen-1-y)-N

N′-bis(phenyl)benzidine(NPB)层的厚度

制备了结构为ITO/NPB/aluminum(Ⅲ)bis(2-methyl-8-quinolinato)-4-phenylphenolate(BAlq)/NPB(0~18nm)/tri-(8-hydroxyquinoline)-aluminum(Alq

)/Mg:Ag的多层有机电致发光器件.分析结果表明

在该类异质结器件中

NPB不仅可以作为空穴传输材料

在适当的厚度范围内

它还可以起到调控载流子复合区域的作用;当NPB厚度在0~18nm之间变化时

随着其厚度增加器件发光颜色可由蓝色变为绿色.通过器件发光光谱的表征可以得知

器件的载流子复合区域相应地由BAlq层转移至Alq

层.

Abstract

关键词

有机电致发光NPBBAlqAlq3载流子复合区域

Keywords

references

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