SU Jian-feng, YAO Ran, ZHONG Ze, FU Zhu-xi. Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films[J]. Chinese Journal of Luminescence, 2008,29(2): 299-303
SU Jian-feng, YAO Ran, ZHONG Ze, FU Zhu-xi. Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films[J]. Chinese Journal of Luminescence, 2008,29(2): 299-303DOI:
Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films
many papers reported that it was difficult to obtain p-ZnO through N
2
splitting. We studies the properties of ZnO films through N
2
splitting and N-Al co-doping by our MOCVD system which was improved with RF assisted equipment. The data of SIMS showed that the N concentration reached to 10
20~21
cm
-3
in ZnO films. On this basic
we have studied the growth and photoelectric-properties of N-Al co-doped ZnO films
the effect of RF power on the crystal quality
surface morphologies and optical properties
through XRD
AFM and PL methods
to compare the properties of N-Al co-doped ZnO films. The result of our experiments indicates that the growth rate of ZnO films increases with increasing N splitting
N-Al co-doped ZnO films display p-type property
but the resistance of N doped ZnO films was rather high which was caused by non-activated N in ZnO films
this revealed that the N-Al co-doping facilitates the activation of N in ZnO films.
关键词
金属有机化学气相沉积射频辅助N离化N-Al共掺杂
Keywords
MOCVDRF-assistedN splittingN-Al co-doping
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