Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films

SU Jian-feng; YAO Ran; ZHONG Ze; FU Zhu-xi

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Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films

更新时间：2020-08-12

- Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films
- Chinese Journal of Luminescence Vol. 29, Issue 2, Pages: 299-303(2008)
- 作者机构：
  
  中国科学技术大学, 物理系
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Published：20 March 2008，
  
  Received：25 October 2007，
  
  Revised：24 December 2007，
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苏剑峰, 姚然, 钟泽, 傅竹西. 射频辅助N掺杂ZnO薄膜的生长及其光电特性[J]. 发光学报, 2008,29(2): 299-303

SU Jian-feng, YAO Ran, ZHONG Ze, FU Zhu-xi. Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films[J]. Chinese Journal of Luminescence, 2008,29(2): 299-303
苏剑峰, 姚然, 钟泽, 傅竹西. 射频辅助N掺杂ZnO薄膜的生长及其光电特性[J]. 发光学报, 2008,29(2): 299-303 DOI：

SU Jian-feng, YAO Ran, ZHONG Ze, FU Zhu-xi. Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films[J]. Chinese Journal of Luminescence, 2008,29(2): 299-303 DOI：

摘要

在MOCVD设备中采用改进的射频辅助生长装置

通过裂解N

及N-Al共掺杂的方法进行ZnO的p型掺杂研究。通过二次离子质谱(SIMS)、X射线衍射(XRD)、原子力显微镜(AFM)、光致发光(PL)谱等方法分析了薄膜中N杂质的浓度

以及射频功率与晶体质量、表面形貌以及光学特性之间的关系

并与Al掺杂和N掺杂的ZnO薄膜进行对比。实验结果表明

N掺杂的浓度高达10

-3

;N-Al共掺杂极大地增加了ZnO的成核速率

其主要原因是N离化所起的作用;N-Al共掺的ZnO薄膜显示出p型性质

而N掺杂的ZnO薄膜由于N原子处于非激活状态而呈现高阻

这说明N-Al共掺杂对ZnO中N原子的活化起到一定作用。

Abstract

In past

many papers reported that it was difficult to obtain p-ZnO through N

splitting. We studies the properties of ZnO films through N

splitting and N-Al co-doping by our MOCVD system which was improved with RF assisted equipment. The data of SIMS showed that the N concentration reached to 10

20~21

-3

in ZnO films. On this basic

we have studied the growth and photoelectric-properties of N-Al co-doped ZnO films

the effect of RF power on the crystal quality

surface morphologies and optical properties

through XRD

AFM and PL methods

to compare the properties of N-Al co-doped ZnO films. The result of our experiments indicates that the growth rate of ZnO films increases with increasing N splitting

N-Al co-doped ZnO films display p-type property

but the resistance of N doped ZnO films was rather high which was caused by non-activated N in ZnO films

this revealed that the N-Al co-doping facilitates the activation of N in ZnO films.

关键词

金属有机化学气相沉积射频辅助N离化N-Al共掺杂

Keywords

MOCVDRF-assistedN splittingN-Al co-doping

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State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science

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