WENG Zhan-kun, LIU Ai-min, LIU Yan-hong, HU Zeng-quan. Photoluminescence and Formation of ZnO Thin Films on n-InP(100) by Electrodeposition[J]. Chinese Journal of Luminescence, 2008,29(2): 283-288
WENG Zhan-kun, LIU Ai-min, LIU Yan-hong, HU Zeng-quan. Photoluminescence and Formation of ZnO Thin Films on n-InP(100) by Electrodeposition[J]. Chinese Journal of Luminescence, 2008,29(2): 283-288DOI:
Photoluminescence and Formation of ZnO Thin Films on n-InP(100) by Electrodeposition
The ZnO thin films are fabricated by electrodeposition on n-type InP wafers at constant potential. Polarization potential of the deposition of ZnO is firstly confirmed using linear sweep voltammetry in 0.1 mol/L Zn(NO
3
)
2
electrolyte/InP system
which is -1.187 7 V vs. SCE at 20℃. Scanning electron microscopy shows that the thin films become smooth and compact with decreasing applied potential
and the narrow X-ray diffraction peaks also show the good crystal quality of the thin films. The optical properties of ZnO thin films are studied by photoluminescence spectrum measurements. The ZnO thin films obtained at low potential exhibits good photoluminescence.
关键词
氧化锌薄膜电沉积X射线衍射光致发光
Keywords
ZnO thin filmselectrodepositionXRDPL
references
Huang M H,Mao S,Feick H,et al.Room-temperature ultraviolet nanowire nanolasers[J].Science,2001,292(5523):1897-1899.
Wei Z P,Lu Y M,Shen D Z,et al.Room temperature p-n ZnO blue-violet light-emitting diodes[J].Appl.Phys.Lett.,2007,90(4):042113-1-3.
Xie Lunjun,Chen Guangde,Zhu Youzhang,et al.Photoluminescence characteristics of ZnO film grown by laser-MBE method[J].Chin.J.Lumin.(发光学报),2006,27(2):215-220 (in Chinese).
Du G T,Ma Y,Zhang Y T,et al.Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy[J].Appl.Phys.Lett.,2005,87(21):213103-1-3.
Meng Xiangdong,Lin Bixia,Hong Liang,et al.Potoluminescence properties for ZnO films grown by two-step CVD[J].Chin.J.Lumin.(发光学报),2006,27(5):792-796 (in Chinese).
Li X N,Asher S E,Limpijumnong S,et al.Unintentional doping and compensation effects of carbon in metal-organic chemical-vapor deposition fabricated ZnO thin films[J].J.Vac.Sci.Technol.A,2006,24(4):1213-1217.
Bian J M,Li X M,Gao X D,et al.Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis[J].Appl.Phys.Lett.,2004,84(4):541-543.
Zhao Junliang,Li Xiaomin,Gu Yanfei,et al.Effect of seeding layer on the crystal quality and photoelectric property of ZnO films grown by spray pyrolysis[J].Chin.J.Lumin.(发光学报),2006,27(6):933-938 (in Chinese).
Izaki M,Omi T.Electrolyte optimization for cathodic growth of zinc oxide films[J].J.Electrochem.Soc.,1996,143(3):L53-L55.
Regan B O',Schwartz D T,Zakeeruddin S M,et al.Electrodeposited nanocomposite n-p heterojunctions for solid-state dye-sensitized photovoltaics[J].Adv.Mater.,2000,12(17):1263-1267.
Pauporte T,Lincot D.Electrodeposition of semiconductors for optoelectronic devices:results on zinc oxide[J].Electrochimica Acta,2000,45(20):3345-3353.
Machado G,Guerra D N,Leinen D,et al.Indium doped zinc oxide thin films obtained by electrodeposition[J].Thin Solid Films,2005,490(2):124-131.
Xu L F,Guo Y,Liao Q,et al.Morphological control of ZnO nanostructures by electrodeposition[J].J.Phys.Chem.B,2005,109(28):13519-13522.
Marotti R E,Guerra D N,Bello C,et al.Bandgap energy tuning of electrochemically grown ZnO thin films by thickness and electrodeposition potential[J].Solar Energy Materials and Solar Cells,2004,82(1-2):85-103.
Cui J B,Gibson U J.Electrodeposition and room temperature ferromagnetic anisotropy of Co and Ni-doped ZnO nanowire arrays[J].Appl.Phys.Lett.,2005,87(13):133108-1-3.
Goux A,Pauporte T,Chivot J,et al.Temperature effects on ZnO electrodeposition[J].Electrochimica Acta,2005,50(11):2239-2248.
Sun Y,Ketterson J B,Wong G K L.Excitonic gain and stimulated ultraviolet emission in nanocrystalline zinc-oxide powder[J].Appl.Phys.Lett.,2000,77(15):2322-2324.
Bylander E G.Surface effects on the low-energy cathodoluminescence of zinc oxide[J].J.Appl.Phys.,1978,49(3):1188-1195.
Liu M,Kitai A H,Mascher P.Point defects and luminescence centers in zinc oxide doped with manganese[J].J.Lumin.,1992,54(1):35-42.
Look D C,Hemsky J W,Sizelove J R.Residual native shallow donor in ZnO[J].Phys.Rev.Lett.,1999,82(12):2552-2555.
Lin B X,Fu Z X,Jia Y B.Green luminescent center in undoped zinc oxide films deposited on silicon substrates[J].Appl.Phys.Lett.,2001,79(7):943-945.
Weiss B L,Welss B L.Properties of Indium Phosphide[M].New York:Institution of Engineering and Technology,1991,5.
Sun Y M.FP-LMTO study on the electronic structure of ZnO and its defects[D].the Ph.D.thesis,University of Science and Technology of China,2000 (in Chinese).