WANG Yue, , SHI Wei, YUAN Jin-she, HE Xun-jun, HU Hui, JI Guang-ju. Photoluminescence and Optical Absorption Properties of InGaN/GaN Single Quantum Well Grown by MOVPE[J]. Chinese Journal of Luminescence, 2007,28(3): 407-411
WANG Yue, , SHI Wei, YUAN Jin-she, HE Xun-jun, HU Hui, JI Guang-ju. Photoluminescence and Optical Absorption Properties of InGaN/GaN Single Quantum Well Grown by MOVPE[J]. Chinese Journal of Luminescence, 2007,28(3): 407-411DOI:
Photoluminescence and Optical Absorption Properties of InGaN/GaN Single Quantum Well Grown by MOVPE
Gallium nitride and its ternary alloys have been attracting much attention because of their unique physical and chemical properties and their great potentialities for semiconductor industrial applications
such as light emitting diodes(LEDs)
laser diodes(LDs) operating from green to ultraviolet(UV)
UV-detectors and microwave power devices. The primary object of this study is to investigate the influence of different thickness of Fixed-Indium-Content InGaN layer on the shift of the photoluminescence(PL) spectra and optical absorption of the whole system structure. Photoluminescence(PL) and absorption properties of the Fixed-Indium-Content InGaN/GaN heterojunction single quantum well (SQW) structures have been investigated using photoluminescence spectrum and ultraviolet-vi-sible spectrophotometer at room temperature
respectively. The films were grown by metal-organic vapor phase epitaxy (MOVPE)
using GaN buffer layer on sapphire substrates. The width of InGaN layer (<3nm) in the SQW was varied while keeping other growth parameters fixed. Sample A has an InGaN active layer of thickness 1.5nm
and Sample B has an InGaN active layer of thickness 2.5nm. Two samples were capped with a 25nm GaN layer. PL measurements show that the PL peak position (432nm in Sample A and 465nm in Sample B) was redshifted by 33nm
the intensity was reduced about 8%
and the full width at half maximum (FWHM) of PL spectrum increases with increasing (1nm) of the potential well layer width. The spectra of transmission and reflection show that transmission T is very high there can be only few reflection R as no absorption R+T exceeds 100% in the near infrared ranges for the sample with InGaN layer of thickness 1.5nm. The reasons of these results are discussed. The significance of these studies is multifold and these results provide further information of importance toward the design optimization of optoelectronic devices employing the Ⅲ-nitrides.
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