PHOTOLUMINESCENCE OF DEFECTS IN NEUTRON IRRADIATED SI-GaAs

Liu Jian; Wang Peixuan

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PHOTOLUMINESCENCE OF DEFECTS IN NEUTRON IRRADIATED SI-GaAs

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- PHOTOLUMINESCENCE OF DEFECTS IN NEUTRON IRRADIATED SI-GaAs
- Chinese Journal of Luminescence Vol. 19, Issue 1, Pages: 50-55(1998)
- 作者机构：
  
  北京科技大学材料物理系北京,100083
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：28 February 1998，
  
  Received：19 May 1997，
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刘健, 王佩璇. 中子辐照GaAs快速退火行为的低温光荧光研究[J]. 发光学报, 1998,19(1): 50-55

Liu Jian, Wang Peixuan. PHOTOLUMINESCENCE OF DEFECTS IN NEUTRON IRRADIATED SI-GaAs[J]. Chinese Journal of Luminescence, 1998,19(1): 50-55
刘健, 王佩璇. 中子辐照GaAs快速退火行为的低温光荧光研究[J]. 发光学报, 1998,19(1): 50-55 DOI：

Liu Jian, Wang Peixuan. PHOTOLUMINESCENCE OF DEFECTS IN NEUTRON IRRADIATED SI-GaAs[J]. Chinese Journal of Luminescence, 1998,19(1): 50-55 DOI：

摘要

用低温(10K)光荧光(PL)的方法对中子辐照砷化镓中的缺陷及嬗变掺杂进行了研究.结果表明:低温PL实验可观察到中子嬗变掺杂效应

嬗变掺杂使近导带施主增加从而使与C

有关的跃迁峰向低能移动.辐照剂量较低时

嬗变原子Ge占居Ga位;当辐照剂量较大时

部分嬗变原子Ge占居As位.在高剂量(10

n/cm

)辐照情况下

经800℃(20秒)退火

仍有反位缺陷Ca

(EV+200meV)和复合缺陷I

-V

存在

在低剂量(10

n/cm

～10

n/cm

)辐照情况下

经此退火过程

未观察到这两种缺陷的PL峰.

Abstract

Photoluminescence of neutron irradiation-induced defects and neutron-transmutation-doping in GaAs was investigated at 10K.The results show that the neutron-transmutation-doping effect can be observed by low temperature photoluminescence.The shift of the C

related PL peak is attributed to the increase of donors near conduct band after transmutation-doping.Under the conditions of low transmutation doped concentration the transmutated Ge atoms occupy Ga sites;where as after high fluence irradiation and hence high transmutation-doped concentration obtained some part of the transmutated Ge atoms are placed in As sites.For the irradiation of high neutron fluence 10

n/cm

and after rapid annealing at 800℃ for 20 seconds

there still exist antisite defects Ga

(

V+200meV) and complex defects I

-V

but under the neutron irradiation of fluence 10

n/cm

～10

n/cm

such defects (mentioned above) have not been found.

关键词

GaAs中子辐照光荧光

Keywords

GaAsneutron irradiationphotoluminescence

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