Photoluminescence of neutron irradiation-induced defects and neutron-transmutation-doping in GaAs was investigated at 10K.The results show that the neutron-transmutation-doping effect can be observed by low temperature photoluminescence.The shift of the C
As
related PL peak is attributed to the increase of donors near conduct band after transmutation-doping.Under the conditions of low transmutation doped concentration the transmutated Ge atoms occupy Ga sites;where as after high fluence irradiation and hence high transmutation-doped concentration obtained some part of the transmutated Ge atoms are placed in As sites.For the irradiation of high neutron fluence 10
17
n/cm
2
and after rapid annealing at 800℃ for 20 seconds
there still exist antisite defects Ga
As
(
E
V+200meV) and complex defects I
Ga
-V
As
but under the neutron irradiation of fluence 10
14
n/cm
2
~10
15
n/cm
2
such defects (mentioned above) have not been found.
Surface and Luminescence Properties of GaAs(100) by Hydrazine Solution Passivation
RF Sulfur-plasma Passivation of GaAs(100) Surface
Nitrogen-plasma Passivation of GaAs Semiconductor Surface
Neutron Irradiation Induced Displacement Damage Effects on Charge Coupled Device
Properties of InGaAs Deposited on GaAs Substrate with Two-step Growth
Related Author
GAO Xin
BO Bao-xue
XU Yu-meng
QIAO Zhong-liang
CAO Xi-wen
XIA Xiao-yu
YUAN Xu-ze
XU Liu-yang
Related Institution
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology
Key Laboratory of Functional Materials and Devices Under Special Environments of Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
University of Chinese Academy of Sciences
Chongqing Optoelectronics Research Institute
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences