PICOSECOND EXCITONIC OPTICAL BISTABILITY IN ZnSe-ZnTe/GaAs MQWs ON REFLECTION AT ROOM TEMPERATURE

Shen Dezhen; Fan Xiwu; Yang Baojun

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PICOSECOND EXCITONIC OPTICAL BISTABILITY IN ZnSe-ZnTe/GaAs MQWs ON REFLECTION AT ROOM TEMPERATURE

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- PICOSECOND EXCITONIC OPTICAL BISTABILITY IN ZnSe-ZnTe/GaAs MQWs ON REFLECTION AT ROOM TEMPERATURE
- Chinese Journal of Luminescence Vol. 16, Issue 1, Pages: 16-19(1995)
- 作者机构：
  
  中国科学院长春物理研究所激发态物理开放实验室长春,130021
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：28 February 1995，
  
  Received：7 April 1994，
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申德振, 范希武, 杨宝均. ZnSe-ZnTe多量子阱室温下的反射型皮秒激子光双稳[J]. 发光学报, 1995,16(1): 16-19

Shen Dezhen, Fan Xiwu, Yang Baojun. PICOSECOND EXCITONIC OPTICAL BISTABILITY IN ZnSe-ZnTe/GaAs MQWs ON REFLECTION AT ROOM TEMPERATURE[J]. Chinese Journal of Luminescence, 1995,16(1): 16-19
申德振, 范希武, 杨宝均. ZnSe-ZnTe多量子阱室温下的反射型皮秒激子光双稳[J]. 发光学报, 1995,16(1): 16-19 DOI：

Shen Dezhen, Fan Xiwu, Yang Baojun. PICOSECOND EXCITONIC OPTICAL BISTABILITY IN ZnSe-ZnTe/GaAs MQWs ON REFLECTION AT ROOM TEMPERATURE[J]. Chinese Journal of Luminescence, 1995,16(1): 16-19 DOI：

摘要

本文首次研究了ZnSe-ZnTe多量子阱在室温下的反射型皮秒激子光双稳

实验结果表明

ZnSe-ZnTe多量子阱在室温下的反射型皮秒光双稳的阈值光强和对比度分别为1.1MW/cm

和6:1.根据测量得到的ZnSe-ZnTe多量子阱在室温下的激子吸收光谱及激子的非线性吸收理论

归结ZnSe-ZnTe多量子阱室温下的皮秒光双稳的主要非线性机理为ZnSe-ZnTe多量子阱的激子饱和吸收引起的折射率变化.

Abstract

The excitonic optical bistability with picosecond switching time in ZnSe-ZnTe/GaAs multiple quantum wells(MQWs)has been studied on reflection at room.temperature for the first time.The experimental results indicate that the switching threshold from high to low states and the contrast ratio for the optical bistability are about 1.1MW/cm

and 6:1

respectively.the major nonlinear mechanism for the optical bistability is due to the change of refractive index caused by the excitonic saturating absorption.

关键词

ZnSe－ZnTe多量子阱激子光双稳

Keywords

ZnSe-ZnTe MQWsexcitonic optical bistability

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