SPONTANEOUS AND STIMULATED EMISSION IN VPE ZnSxSe1-x EPITAXIAL LAYERS

Zhang Jiahua; Fan Xiwu

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SPONTANEOUS AND STIMULATED EMISSION IN VPE ZnS_xSe_1-x EPITAXIAL LAYERS

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- SPONTANEOUS AND STIMULATED EMISSION IN VPE ZnS_xSe_1-x EPITAXIAL LAYERS
- Chinese Journal of Luminescence Vol. 12, Issue 2, Pages: 98-104(1991)
- 作者机构：
  
  中国科学院长春物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：30 May 1991，
  
  Received：31 August 1990，
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张家骅, 范希武. VPE ZnSxSe1-x外延膜中的自发和受激辐射[J]. 发光学报, 1991,12(2): 98-104

Zhang Jiahua, Fan Xiwu. SPONTANEOUS AND STIMULATED EMISSION IN VPE ZnSxSe1-x EPITAXIAL LAYERS[J]. Chinese Journal of Luminescence, 1991,12(2): 98-104
张家骅, 范希武. VPE ZnSxSe1-x外延膜中的自发和受激辐射[J]. 发光学报, 1991,12(2): 98-104 DOI：

Zhang Jiahua, Fan Xiwu. SPONTANEOUS AND STIMULATED EMISSION IN VPE ZnSxSe1-x EPITAXIAL LAYERS[J]. Chinese Journal of Luminescence, 1991,12(2): 98-104 DOI：

摘要

本文首次报道了VPE ZnS

1-x

外延膜在77K时起因于激子和激子(E

-E

)散射的自发辐射和受激辐射

研究了E

-E

散射发光的位置和强度与激发密度的关系

分析了受激辐射的光子能量比自发辐射稍低的原因.

Abstract

The spontaneous and stimulated emission in Ⅱ-Ⅵ compounds such as CdS

CpSe and ZnSe have been studied

[1-5]

. In this paper

we report the first observation of spontaneous and stimulated emission at 77 K in VPE ZnS

1-x

epilayers

which were grown on (100)GaAs substrate

[6]

.The diagram of experimental setup is shown in Fig.1.Usually

there is only E band in the photoluminescence (PL) spectra in VPE ZnS

1-x

epilayers excited with 337.1 nm line of a N

laser at 77K

as shown in Fig.2. E band should be attributed to the free ex-citon recombination scattered by electrons

[7]

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