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重庆师范大学 物理与光电工程学院, 重庆 401331
皮明雨(1989-),男,山东济宁人,博士,副教授,2018年于重庆大学获得博士学位,主要从事钙钛矿发光材料与器件的研究。 E-mail: mingyupi@cqnu.edu.cn
聂家毓(2005-),女,重庆人,在读本科生,主要从事钙钛矿材料制备与放大自发辐射性能的研究。 E-mail: 2023051105065@stu.cqnu.edu.cn
杨洁(1993-),女,河南商丘人,博士,副教授,2020年于重庆大学获得博士学位,主要从事钙钛矿纳米材料与激光增益机理的研究。 E-mail: jieyang611@cqnu.edu.cn
收稿:2026-07-07,
修回:2026-07-17,
纸质出版:2026-10-25
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皮明雨,聂家毓,贺燕等.四甲基脲调控中间相实现低阈值、高稳定性FAPbI3放大自发辐射[J].发光学报,2026,47(10):1808-1817. DOI: 10.3724/CJL.20260233. CSTR: 32170.14.CJL.20260233.
PI Mingyu,NIE Jiayu,HE Yan,et al.Regulation of Intermediate Phase via Tetramethylurea for Low-threshold and High-stability Amplified Spontaneous Emission of FAPbI3 Perovskite[J].Chinese Journal of Luminescence,2026,47(10):1808-1817. DOI: 10.3724/CJL.20260233. CSTR: 32170.14.CJL.20260233.
皮明雨,聂家毓,贺燕等.四甲基脲调控中间相实现低阈值、高稳定性FAPbI3放大自发辐射[J].发光学报,2026,47(10):1808-1817. DOI: 10.3724/CJL.20260233. CSTR: 32170.14.CJL.20260233. DOI:
PI Mingyu,NIE Jiayu,HE Yan,et al.Regulation of Intermediate Phase via Tetramethylurea for Low-threshold and High-stability Amplified Spontaneous Emission of FAPbI3 Perovskite[J].Chinese Journal of Luminescence,2026,47(10):1808-1817. DOI: 10.3724/CJL.20260233. CSTR: 32170.14.CJL.20260233. DOI:
甲脒碘化铅(FAPbI
3
)钙钛矿因具备约1.47 eV的窄带隙及优异的光学性能,成为近红外光放大与激光器件领域的核心候选材料。然而,FAPbI
3
薄膜在传统N,N-二甲基甲酰胺/二甲基亚砜(DMF/DMSO)溶剂制备过程中快速结晶,易导致薄膜缺陷高,且FAPbI
3
钙钛矿易从具有光电活性的黑相(α相)转变为无光电活性的黄相(δ相),从而降低激光器件性能和稳定性,制约了其实际应用。为解决以上问题,本文提出将强配位Lewis碱四甲基脲(TMU)引入FAPbI
3
研究体系,构建DMF/TMU溶剂,取代传统溶剂。与DMSO相比,TMU与溶质之间的更强相互作用能有效延缓中间相向钙钛矿相的转变,从而制备出缺陷更少的高质量钙钛矿薄膜,并显著抑制α相到δ相的转变。在纳秒激光激发条件下,所制备FAPbI
3
-TMU薄膜的放大自发辐射(Amplified spontaneous emission,ASE)阈值为10.93 μJ·cm
-2
,较FAPbI
3
-DMSO薄膜降低38.35%,其光学增益及损耗得到有效优化,且光稳定性与热稳定性均获显著提升。该研究为通过溶剂工程实现高效稳定的钙钛矿激光器件提供了新的思路。
Formamidinium lead iodide (FAPbI
3
) perovskite exhibits a narrow bandgap of approximately 1.47 eV and superior optical properties, making it a promising candidate for near-infrared optical amplification and lasing devices. However, FAPbI
3
thin films crystallize rapidly during fabrication with the conventional N,N-dimethylformamide/dimethyl sulfoxide (DMF/DMSO) solvent system, readily leading to high defect densities in the films. Furthermore, photoactive black α-phase FAPbI
3
readily transforms into photoinactive yellow δ-phase, deteriorating lasing device performance and operational stability, and limiting practical applications. To mitigate these drawbacks, we introduce a strongly coordinating Lewis base, tetramethylurea (TMU), into the FAPbI
3
system, establishing a DMF/TMU solvent system to replace the conventional one. TMU forms stronger coordination interactions with lead halide precursors than DMSO, retarding the phase transition from the intermediate phase to the perovskite phase. This yields high-quality films with reduced defect density and effectively suppresses the unfavorable α-to-δ phase transition. Under nanosecond pulsed laser excitation, the fabricated FAPbI
3
-TMU film achieves an amplified spontaneous emission (ASE) threshold of 10.93 μJ·cm
-2
, a 38.35% reduction compared with the FAPbI
3
-DMSO film. Meanwhile, the FAPbI
3
-TMU film delivers optimized optical gain and loss with remarkable improvements in photostability and thermal stability. This work provides a new solvent engineering route for high-performance, robust perovskite lasing devices.
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