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Highly Sensitive Broad Organic Photodetector Based on Alumina Interface Modification Layer
Device Fabrication and Physics | 更新时间：2026-09-12

    • Highly Sensitive Broad Organic Photodetector Based on Alumina Interface Modification Layer

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    • Chinese Journal of Luminescence   Vol. 46, Issue 10, Pages: 1930-1939(2025)

    • DOI：10.37188/CJL.20250137    

      CLC： O472.3
    • CSTR：32170.14.CJL.20250137    

    • Received：30 April 2025，

      Revised：2025-05-08，

      Published：25 October 2025

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  • LI Yaojiang,SHI Linlin,SUN Xinyu,et al.Highly Sensitive Broad Organic Photodetector Based on Alumina Interface Modification Layer[J].Chinese Journal of Luminescence,2025,46(10):1930-1939. DOI： 10.37188/CJL.20250137. CSTR： 32170.14.CJL.20250137.

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Related Author

LI Yaojiang
SHI Linlin
SUN Xinyu
SHANG Ziheng
LI Guohui
JI Ting
CUI Yanxia
WANG Yuxin

Related Institution

College of Physics and Optoelectronics， Shanxi Key Lab of Photovoltaic Technology and Application， Key Lab of New Sensors and Intelligent Control of Ministry of Education， Taiyuan University of Technology
Key Laboratory for Photonic and Electronic Bandgap Materials， Ministry of Education， School of Physics and Electronic Engineering， Harbin Normal University
College of Physics， Nanjing University of Aeronautics and Astronautics
School of Computer and Information Engineering， Anhui University of Finance & Economics
Key Laboratory of Luminescence and Optical Information， Ministry of Education， School of Physical Science and Engineering， Beijing Jiaotong University
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