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Epitaxial Growth of Hexagonal Boron Nitride and Device Application
Invited Review | 更新时间：2025-10-30

    • Epitaxial Growth of Hexagonal Boron Nitride and Device Application

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    • “Report: Hexagonal boron nitride, as a low dimensional material, exhibits excellent performance in fields such as optoelectronics. The expert system introduced its structure and performance, discussed the preparation methods and application progress, and provided direction for future development.”
    • Chinese Journal of Luminescence   Vol. 46, Issue 10, Pages: 1798-1818(2025)

    • DOI：10.37188/CJL.20250128    

      CLC： O482.31
    • CSTR：32170.14.CJL.20250128    

    • Received：26 April 2025，

      Revised：2025-05-11，

      Published：25 October 2025

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  • DONG Jingnan,DUO Yiwei,YANG Jiankun,et al.Epitaxial Growth of Hexagonal Boron Nitride and Device Application[J].Chinese Journal of Luminescence,2025,46(10):1798-1818. DOI： 10.37188/CJL.20250128. CSTR： 32170.14.CJL.20250128.

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Related Institution

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Suzhou Institute of Nano-Tech and Nano-Bionics （SINANO）， Chinese Academy of Sciences， Suzhou
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