Electric Field-driven Near-infrared Light-emitting Diodes from Excitons in Few-layer Black Phosphorus
Device Fabrication and Physics|更新时间:2025-09-17
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Electric Field-driven Near-infrared Light-emitting Diodes from Excitons in Few-layer Black Phosphorus
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“In the field of micro nano optoelectronic devices, researchers have successfully constructed near-infrared electrically driven light-emitting devices based on the properties of black phosphorus excitons, expanding the two-dimensional material emission band and providing a new path for the research of near-infrared micro nano light-emitting devices.”
Chinese Journal of LuminescenceVol. 46, Issue 9, Pages: 1694-1702(2025)
作者机构:
1.上海大学 材料科学与工程学院, 上海 200444
2.中国科学院苏州纳米技术与纳米仿生研究所 创新实验室, 江苏 苏州 215123
作者简介:
基金信息:
National Natural Science Foundation of China(62274175;T2325025);National Key R&D Program of China(2021YFA1200804);Jiangsu Province Key R&D Program(BE2023009-5);Basic Research Program of Jiangsu(BK20232044);Suzhou Basic Research Program(SJC2023004);Gusu Leading Talents Program(ZXL2023166)
LIANG Yaning,ZHANG Junrong,WANG Siyuan,et al.Electric Field-driven Near-infrared Light-emitting Diodes from Excitons in Few-layer Black Phosphorus[J].Chinese Journal of Luminescence,2025,46(09):1694-1702.