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Influence of AlGaAs Insertion Structure on Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells
Synthesis and Properties of Materials | 更新时间：2026-09-12

    • Influence of AlGaAs Insertion Structure on Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells

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    • Chinese Journal of Luminescence   Vol. 46, Issue 4, Pages: 683-690(2025)

    • DOI：10.37188/CJL.20240318    

      CLC： O482.31
    • CSTR：32170. 14. CJL. 20240318    

    • Received：05 December 2024，

      Revised：2024-12-23，

      Published：25 April 2025

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  • ZHAO Shucun,WANG Haizhu,WANG Dengkui,et al.Influence of AlGaAs Insertion Structure on Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells[J].Chinese Journal of Luminescence,2025,46(04):683-690. DOI： 10.37188/CJL.20240318. CSTR： 32170. 14. CJL. 20240318.

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Related Author

MA Xiaohui
LV Minghui
WANG Zhensheng
GAN Lulu
WANG Dengkui
WANG Haizhu
SONG Shi-wei
LIANG Hong-wei

Related Institution

School of Physics and Optoelectronic Technology, Dalian University of Technology
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
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College of Electronic Science and Engineering, Jilin University
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
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