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Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors
Invited Paper | 更新时间：2025-12-31

    • Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors

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    • “According to the latest report, rare earth doped oxide materials have made breakthroughs in the field of metal oxide thin film transistors, which are expected to achieve a balance between high mobility and high stability, providing new solutions for high-end display applications.”
    • Chinese Journal of Luminescence   Vol. 46, Issue 3, Pages: 436-451(2025)

    • DOI：10.37188/CJL.20240268    

      CLC： TN321.5;O482.31
    • CSTR：32170. 14. CJL. 20240268    

    • Received：20 October 2024，

      Revised：2024-11-06，

      Published：25 March 2025

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  • HUANG Xianglan,PENG Junbiao.Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors[J].Chinese Journal of Luminescence,2025,46(03):436-451. DOI： 10.37188/CJL.20240268. CSTR： 32170. 14. CJL. 20240268.

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