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Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors
Invited Paper | 更新时间:2025-03-24
    • Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors

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    • According to the latest report, rare earth doped oxide materials have made breakthroughs in the field of metal oxide thin film transistors, with the potential to achieve high mobility and stability, providing new solutions for high-end display applications.
    • Chinese Journal of Luminescence   Vol. 46, Issue 3, Pages: 436-451(2025)
    • DOI:10.37188/CJL.20240268    

      CLC: TN321.5;O482.31
    • CSTR:32170.14.CJL.20240268    
    • Received:20 October 2024

      Revised:2024-11-06

      Published:25 March 2025

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  • HUANG Xianglan,PENG Junbiao.Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors[J].Chinese Journal of Luminescence,2025,46(03):436-451. DOI: 10.37188/CJL.20240268. CSTR: 32170.14.CJL.20240268.

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