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Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors
Invited Paper | 更新时间：2025-03-24
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    • Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors

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    • “According to the latest report, rare earth doped oxide materials have made breakthroughs in the field of metal oxide thin film transistors, with the potential to achieve high mobility and stability, providing new solutions for high-end display applications.”
    • Chinese Journal of Luminescence   Vol. 46, Issue 3, Pages: 436-451(2025)

    • DOI：10.37188/CJL.20240268    

      CLC： TN321.5;O482.31
    • CSTR：32170. 14. CJL. 20240268    

    • Received：20 October 2024，

      Revised：06 November 2024，

      Published：25 March 2025

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  • HUANG Xianglan,PENG Junbiao.Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors[J].Chinese Journal of Luminescence,2025,46(03):436-451. DOI： 10.37188/CJL.20240268. CSTR： 32170. 14. CJL. 20240268.

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Related Author

LI Gongming
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Related Institution

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China （Mindu Innovation Laboratory）
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State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
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