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1. 上海大学 新型显示技术及应用集成教育部重点实验室 上海,200072
2. 天马微电子集团 上海,201205
纸质出版日期:2018-3-5,
网络出版日期:2017-9-18,
收稿日期:2017-7-11,
修回日期:2017-8-27,
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楼均辉, 姜姝, 吴天一等. 金属氧化物TFT阈值对LCD显示屏可靠性的影响[J]. 发光学报, 2018,39(3): 383-387
LOU Jun-hui, JIANG Shu, WU Tian-yi etc. Effect of Threshold-voltage of Oxide-TFT on The Reliability of LCD Display[J]. Chinese Journal of Luminescence, 2018,39(3): 383-387
楼均辉, 姜姝, 吴天一等. 金属氧化物TFT阈值对LCD显示屏可靠性的影响[J]. 发光学报, 2018,39(3): 383-387 DOI: 10.3788/fgxb20183903.0383.
LOU Jun-hui, JIANG Shu, WU Tian-yi etc. Effect of Threshold-voltage of Oxide-TFT on The Reliability of LCD Display[J]. Chinese Journal of Luminescence, 2018,39(3): 383-387 DOI: 10.3788/fgxb20183903.0383.
TFT的器件特性是影响氧化物TFT驱动的LCD显示屏良率的关键因素。本文研究了氧化物TFT的关键特性参数(阈值,稳定性)对窄边框LCD显示屏的良率和可靠性的影响。氧化物TFT阈值过负,将会导致TFT无法正常关断,而使显示屏的外围移位寄存器(VSR)电路失效。另外,在显示区域用于像素驱动的氧化物TFT的高温和背光照射下阈值持续负向漂移,最终会导致显示区域的驱动TFT漏电流过大,从而使显示屏出现串扰和残影不良。
The characteristics of TFT are critical to the reliability of metal oxide-TFT drived LCD. The effect of
V
th
and stability of oxide-TFT to the reliability of narrow-bezel LCD display were researched. The negative
V
th
of the normal-on oxide-TFT can result in the failure of VSR scan circuits. Others
the negative-shift of the
V
th
of TFT in pixel at high temperature and under back-light illumination can cause the
V
th
negative shift and results in the cross-talk or image-sticking because of the high leakage current of TFT.
金属氧化物薄膜晶体管阈值LCD可靠性
oxide TFTthreshold-voltage (Vth)LCDreliability
HOSONO H. Recent progress in transparent oxide semiconductors:materials and devices application[J]. Thin Solid Films, 2007, 515(15):6000-6014.
ATHANASSOPOULOU F, CAWTHORN R, LYTRA K. 13.2:Invited paper:LTPS vs oxide backplanes for AMOLED displays:system design considerations and compensation techniques[C]. SID Symposium Digest of Technical Papers, San Diego, 2014.
MATSUO T, MORI S, BAN A, et al.. 8.3:Invited paper:Advantages of IGZO oxide semiconductor[C]. SID Symposium Digest of Technical Papers, San Diego, 2014.
KAMIYA T, NOMURA K, HOSONO H. Present status of amorphous In-Ga-Zn-O thin-film transistors[J]. Sci. Technol. Adv. Mater., 2010, 11(4):044305.
郭永林, 梁续旭, 胡守成, 等. Al2O3薄层修饰SiNx绝缘层的IGZO-TFTs器件的性能研究[J]. 发光学报, 2015, 36(8):947-952. GUO Y L, LIANG X X, CHENG H U, et al.. Improvement of IGZO-TFTs performance with SiNx gate insulator modified by Al2O3 film[J]. Chin. J. Lumin., 2015, 36(8):947-952. (in Chinese)
LI Y, YAO R, WANG H, et al.. Enhanced performance in Al-doped ZnO based transparent flexible transparent thin-film transistors due to oxygen vacancy in ZnO film with Zn-Al-O interfaces fabricated by atomic layer deposition[J]. ACS Appl. Mater. Interf., 2017, 9(13):11711.
BUKKE R N, AVIS C, JIN J. Solution-processed amorphous In-Zn-Sn oxide thin-film transistor performance improvement by solution-processed Y2O3 passivation[J]. IEEE Electron Dev. Lett., 2016, 37(4):433-436.
高娅娜, 许云龙, 张建华, 等. 溶胶凝胶法制备以Al2O3为界面修饰层的铪铟锌氧薄膜晶体管[J]. 发光学报, 2016, 37(1):50-55. GAO Y N, XU Y L, ZHANG J H, et al.. Sol gel was prepared by Al2O3 interface modification of hafnium indium zinc oxide thin film transistor[J]. Chin. J. Lumin., 2016, 37(1):50-55. (in Chinese)
KANG D, LIM H, KIM C, et al.. Amorphous gallium indium zinc oxide thin film transistors:sensitive to oxygen molecules[J]. Appl. Phys. Lett., 2007, 90(19):488.
HWANG D K, MISRA M, LEE Y E, et al.. The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process[J]. Appl. Surf. Sci., 2017, 405:344-349.
信恩龙, 李喜峰, 张建华. 溶胶凝胶法制备透明IZO薄膜晶体管[J]. 发光学报, 2013, 34(2):208-212. XIN E L, LI X F, ZHANG J H. Sol gel preparation of transparent IZO thin film transistor[J]. Chin. J. Lumin., 2013, 34(2):208-212. (in Chinese)
范学丽, 靖瑞宽, 翁超, 等. 湿法刻蚀FI CD均一性的影响因素及提高刻蚀均一性的研究[J]. 液晶与显示, 2016, 31(1):67-73. FAN X L, JING R K, WENG C, et al.. Improvement of etching uniformity and influence factors of wet etching of FI CD uniformity[J]. Chin. J. Liq. Cryst. Disp., 2016, 31(1):67-73. (in Chinese)
CHOWDHURY M D H, UM J G, JIN J. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250℃[J]. Appl. Phys. Lett., 2014, 105(23):2945.
霍晓迪, 陈兵, 李知勋, 等. 过孔的不同干法刻蚀工艺对TFT-LCD性能的影响研究[J]. 液晶与显示, 2016, 31(1):58-61. HUO X D, CHEN B, JI H L, et al.. Influence of different dry etching process of contact hole on TFT-LCD performance[J]. Chin. J. Liq. Cryst. Disp., 2016, 31(1):58-61. (in Chinese)
LEE K H, JI S J, SON K S, et al.. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors[J]. Appl. Phys. Lett., 2009, 95(23):1309.
JI K H, KIM J I, MO Y G, et al.. Comparative study on light-induced bias stress instability of IGZO transistors with, and, gate dielectrics[J]. IEEE Electron Dev. Lett., 2010, 31(12):1404-1406.
YAO J, XU N, DENG S, et al.. Electrical and photosensitive characteristics of a-IGZO TFTs related to oxygen vacancy[J]. IEEE Trans. Electron Dev., 2011, 58(4):1121-1126.
CHONG E, CHUN Y S, KIM S H, et al.. Effect of oxygen on the threshold voltage of a-IGZO TFT[J]. J. Elect. Eng. Technol., 2011, 6(4):539-542.
KIM Y S, NAHM H H, KIM D H. Microscopic mechanism of the negative bias and illumination stress instability of amorphous oxide TFTs[C]. SID Symposium Digest of Technical Papers, Boston, 2012.
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