垒层厚度对InGaN/GaN多量子阱电注入发光性能的影响及机理

黄佳琳; 易淋凯; 周梅; 赵德刚

doi:10.3788/fgxb20183902.0208

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垒层厚度对InGaN/GaN多量子阱电注入发光性能的影响及机理

器件制备及器件物理 | 更新时间：2020-08-12

- 垒层厚度对InGaN/GaN多量子阱电注入发光性能的影响及机理
- Barrier Thickness Designing of InGaN/GaN Multiple Quantum Well for Electroluminescence
- 发光学报 2018年39卷第2期页码：208-213
- 作者机构：
  
  1. 中国科学院半导体研究所集成光电子学国家重点实验室北京,100083
  2. 中国农业大学应用物理系, 北京 100083
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61474142，21403297，11474355）资助项目()
- DOI：10.3788/fgxb20183902.0208
  中图分类号： TN383
- 纸质出版日期：2018-2-5，
  
  收稿日期：2017-5-10，
  
  修回日期：2017-6-15，
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黄佳琳, 易淋凯, 周梅等. 垒层厚度对InGaN/GaN多量子阱电注入发光性能的影响及机理[J]. 发光学报, 2018,39(2): 208-213

HUANG Jia-lin, YI Lin-kai, ZHOU Mei etc. Barrier Thickness Designing of InGaN/GaN Multiple Quantum Well for Electroluminescence[J]. Chinese Journal of Luminescence, 2018,39(2): 208-213
黄佳琳, 易淋凯, 周梅等. 垒层厚度对InGaN/GaN多量子阱电注入发光性能的影响及机理[J]. 发光学报, 2018,39(2): 208-213 DOI： 10.3788/fgxb20183902.0208.

HUANG Jia-lin, YI Lin-kai, ZHOU Mei etc. Barrier Thickness Designing of InGaN/GaN Multiple Quantum Well for Electroluminescence[J]. Chinese Journal of Luminescence, 2018,39(2): 208-213 DOI： 10.3788/fgxb20183902.0208.

摘要

研究了不同垒厚对InGaN/GaN多量子阱电注入发光性能的影响及机理。实验发现，当GaN垒层的厚度从6 nm增大到24 nm时，垒厚的样品发光强度更强，而且当注入电流增加时，适当增加垒厚，可以更显著增加发光强度。进一步结合发光峰位和光谱宽度的研究表明，由于应力和极化效应的存在，当垒层厚度在6~24 nm范围内时，适当增加垒层厚度不仅会使得能带的倾斜加剧，减少电子泄露，而且也会增加InGaN阱层的局域态深度，从而改善量子阱的发光性能。

Abstract

The effects of barrier layer thickness on the electroluminescence performance of InGaN/GaN multiple quantum wells(MQWs) were investigated

and the relevant physical mechanisms were discussed. It is found that the electroluminescence (EL) intensity of the samples which have thicker barrier layers is stronger under the same injection current condition

and their increase with the increase of injection current is more rapid. According to the analysis

a proper increase of barrier layer thickness can not only widen the potential barriers

but also increase the tilt of the energy band of MQWs due to the polarization effect and the localization potential due to in In-rich clusters

thus reducing the electron current leakage and increasing the carrier confinement ability

thereby improving the luminescence performance of the InGaN/GaN multiple quantum wells.

关键词

InGaN/GaN多量子阱垒层厚度电注入发光

Keywords

InGaN/GaNmultiple quantum wellsbarrier thicknesselectroluminescence

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