浏览全部资源
扫码关注微信
1. 中国科学院半导体研究所 光电子器件国家工程研究中心, 北京 100083
2. 中国科学院大学 材料科学与光电技术学院 北京,100049
纸质出版日期:2018-2-5,
网络出版日期:2017-10-12,
收稿日期:2017-6-12,
修回日期:2017-9-20,
扫 描 看 全 文
刘启坤, 孔金霞, 朱凌妮等. 电致发光用于大功率半导体激光器失效模式分析[J]. 发光学报, 2018,39(2): 180-187
LIU Qi-kun, KONG Jin-xia, ZHU Ling-ni etc. Failure Mode Analysis of High-power Laser Diodes by Electroluminescence[J]. Chinese Journal of Luminescence, 2018,39(2): 180-187
刘启坤, 孔金霞, 朱凌妮等. 电致发光用于大功率半导体激光器失效模式分析[J]. 发光学报, 2018,39(2): 180-187 DOI: 10.3788/fgxb20183902.0180.
LIU Qi-kun, KONG Jin-xia, ZHU Ling-ni etc. Failure Mode Analysis of High-power Laser Diodes by Electroluminescence[J]. Chinese Journal of Luminescence, 2018,39(2): 180-187 DOI: 10.3788/fgxb20183902.0180.
利用电致发光(EL)的方法,研究了突然失效的975 nm大功率应变量子阱激光器。起初,我们以为激光器失效是由于腔面发生了突然光学灾变(COMD)。然而,通过EL实验,发现其中一部分激光器腔面没有任何损伤,而内部发生了突然光学灾变(COBD),为工艺的进一步改善指明了方向。对90只发生COD的激光器进行EL成像,发现暗线缺陷(DLD)起始于腔面或是激光器内部。DLD是严重的非辐射复合区,通常沿着有源区延伸出几个分支,造成激光器功率急剧下降。详细分析了不同COD模式的特征并进行了对比。并进一步分析了两种典型COD模式发生的原因,然后给出了抑制COD和提高大功率半导体激光器性能的建议。
We performed failure mode analysis (FMA) on the suddenly failed high-power 975 nm strained quantum well diode lasers. At first
we believed that the lasers suffered catastrophic optical damage (COD) at the mirror facets
which is called COMD. However
by electroluminescence (EL)
we found that some lasers suffered COD only in the bulk without any damage at both facets
which is called COBD
thus guiding our further improvement. Among all the 90 lasers that suffered COD
the EL images demonstrate that the dark line defects (DLDs) can originate from the facets or the bulk. These DLDs are highly non-radiative region and usually confined in the active region with several branches
which leads to the dramatic decrease of the optical power. And to the different COD modes
the common features of DLDs were interpreted and compared in detail. Furthermore
the causes to the two typical COD modes were analyzed
and suggestions were made to suppress the COD process and further improve the high-power laser diodes.
大功率半导体激光器失效模式分析电致发光突然光学灾变暗线缺陷
high-power diode lasersfailure mode analysiselectroluminescencecatastrophic optical damagedark line defect
王鑫, 王翠鸾, 吴霞, 等.GaAs基高功率半导体激光器单管耦合研究[J]. 发光学报,2015, 36(9):1018-1021. WANG X, WANG C L, WU X, et al.. Coupling research of high power single GaAs based semiconductor laser[J]. Chin. J. Lumin., 2015, 36(9):1018-1021. (in Chinese).
HENRY C H, PETROFF P M, LOGAN R A, et al.. Catastrophic damage of AlxGa1-xAs double-heterostructure laser material[J]. J. Appl. Phys., 1979, 50(5):3721-3732.
HEMPEL M, TOMM J W, MATTINA F L, et al.. Microscopic origins of catastrophic optical damage in diode lasers[J]. IEEE J. Select. Top. Quant. Electron., 2013, 19(4):1500508.
SOUTO J, PURA J L, TORRES A, et al.. Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes[J]. Microelectronics Reliability, 2016, 64:627-630.
王文知, 井红旗, 祁琼, 等.大功率半导体激光器可靠性研究和失效分析[J].发光学报, 2017, 38(2):165-169. WANG W Z, JING H Q, QI Q, et al.. Reliability test and failure analysis of high power semiconductor laser[J]. Chin. J. Lumin. 2017, 38(2):165-169. (in Chinese).
SIN Y, LINGLEY Z, PRESSER N, et al.. Catastrophic optical bulk damage in high-power InGaAs-AlGaAs strained quantum well lasers[J]. IEEE J. Select. Top. Quant. Electron., 2017, 23(6):1-13.
JIMENEZ J. Laser diode reliability:crystal defects and degradation modes[J]. Comptes Rendus Physique, 2003, 4(6):663-673.
VANZI M, BONFIGLIO A, MAGISTRALI F, et al.. Electron microscopy of life-tested semiconductor laser diodes[J]. Micron, 2000, 31(3):259-267.
TAKESHITA T, SUGO M, SASAKI T, et al.. Failure analysis of InGaAs/GaAs strained-layer quantum-well lasers using a digital OBIC monitor[J]. IEEE Trans. Electron Dev., 2006, 53(2):211-217.
MARTIN-MARTIN A, AVELLA M, INIGUEZ M P, et al.. A physical model for the rapid degradation of semiconductor laser diodes[J]. Appl. Phys. Lett., 2008, 93(17):171106.
QIAO Y B, FENG S W, XIONG C, et al.. Spatial hole burning degradation of AlGaAs/GaAs laser diodes[J]. Appl. Phys. Lett., 2011, 99(10):103506.
井红旗, 仲莉, 倪羽茜, 等. 高功率密度激光二极管叠层散热结构的热分析[J].发光学报, 2016, 37(1):81-87. JING H Q, ZHONG L, NI Y X, et al.. Thermal analysis of high power density laser diode stack cooling structure[J]. Chin. J. Lumin., 2016, 37(1):81-87. (in Chinese)
NAKWASKI W. Thermal-model of the catastrophic degradation of high-power stripe-geometry GaAs/(AlGa)As double-heterostructure diode-lasers[J]. J. Appl. Phys., 1990, 67(4):1659-1668.
SOUTO J, PURA J L, JIMENEZ J. About the physical meaning of the critical temperature for catastrophic optical damage in high power quantum well laser diodes[J]. Laser Phys. Lett., 2016, 13(2):6.
MENZEL U. Self-consistent calculation of facet heating in asymmetrically coated edge emitting diode lasers[J]. Semicond. Sci. Technol., 1998, 13(3):265.
NI Y X, MA X Y, JING H Q, et al.. Finite element analysis of expansion-matched submounts for high-power laser diodes packaging[J]. J. Semicond., 2016, 37(6):76-80.
HEMPEL M, TOMM J W, ZIEGLER M, et al.. Catastrophic optical damage at front and rear facets of diode lasers[J]. Appl. Phys. Lett., 2010, 97(23):231101.
0
浏览量
64
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构