浏览全部资源
扫码关注微信
正十八硫醇钝化GaAs(100)表面特性研究
Passivation of GaAs(100) Surface by 1-Octadecanethiol
- 发光学报 2018年39卷第2期 页码：175-179
- 作者机构：
吉林建筑大学电气与计算机学院 吉林省建筑电气综合节能重点实验室,吉林 长春,130118
- 作者简介：
- 基金信息：吉林省科技发展计划（20170520169JH，20160204069GX，20170101111JC）();国家自然科学基金（51672103）();国家重点研发计划
DOI：10.3788/fgxb20183902.0175
中图分类号： TN209纸质出版日期：2018-2-5，
网络出版日期：2017-8-16，
收稿日期：2017-6-25，
修回日期：2017-7-26，
扫 描 看 全 文
周路, 初学峰, 闫兴振等. 正十八硫醇钝化GaAs(100)表面特性研究[J]. 发光学报, 2018,39(2): 175-179
ZHOU Lu, CHU Xue-feng, YAN Xing-zhen etc. Passivation of GaAs(100) Surface by 1-Octadecanethiol[J]. Chinese Journal of Luminescence, 2018,39(2): 175-179
周路, 初学峰, 闫兴振等. 正十八硫醇钝化GaAs(100)表面特性研究[J]. 发光学报, 2018,39(2): 175-179 DOI： 10.3788/fgxb20183902.0175.
ZHOU Lu, CHU Xue-feng, YAN Xing-zhen etc. Passivation of GaAs(100) Surface by 1-Octadecanethiol[J]. Chinese Journal of Luminescence, 2018,39(2): 175-179 DOI： 10.3788/fgxb20183902.0175.
摘要
为了有效降低GaAs半导体表面态密度，提出了采用正十八硫醇（ODT，CH
3
[CH
2
]
17
SH）进行GaAs表面钝化的方案。首先，分别对GaAs（100）晶片进行了常规硫代乙酰胺（TAM，CH
3
CSNH
2
）钝化和正十八硫醇钝化，通过X射线光电子能谱（XPS）对比分析了钝化前后晶片表面的化学成分，然后利用光致发光光谱（PL）对正十八硫醇处理的GaAs（100）晶片进行了钝化时间的优化，最后通过扫描电子显微镜（SEM）测试了钝化前后的晶片表面形貌。实验结果表明：采用正十八硫醇钝化的GaAs（100）表面，相比常规硫代乙酰胺钝化方案，具有更低的氧化物含量和更厚的硫化层厚度；室温钝化条件下，钝化时间越长，正十八硫醇的钝化效果越好，但PL强度在钝化超过24 h后基本达到稳定，最高PL强度提高了116%；正十八硫醇钝化的GaAs（100）晶片具有良好的表面形貌，表面形成了均匀、平整的硫化物钝化层。数据表明正十八硫醇是钝化GaAs（100）表面一种非常有效的技术手段。
Abstract
The use of 1-Octadecanethiol(ODT
CH
3
[CH
2
]
17
SH) to prepare clean GaAs(100) surface with low surface state intensity was demonstrated. Firstly
the X-ray photoelectric spectroscopy (XPS) of GaAs(100) passivated by 1-Octadecanethiol and Thioacetamide(TAM
CH
3
CSNH
2
) was compared. Secondly
the ODT passivation time at room temperature condition was optimized by photoluminescence intensity (PL) method. Lastly
the surface morphology before and after passivation using scanning electron microscope (SEM) was discussed. Experimental results indicate that the GaAs(100) passivation using 1-octadecanethiol is shown to lead a lower oxide contamination and a higher sulfide thickness compared with the traditional passivation method of TAM. In the range of 0-24 h
the room-temperature photoluminescence intensity keeps a continuous enhancement with time extend
and the maximum enhancement is 116% than un-passivation one; SEM shows that GaAs(100) wafer has good surface morphology after ODT passivation. This indicates that the surface passivation of GaAs(100) using 1-octadecanethiol is effective.
关键词
钝化砷化镓正十八硫醇
Keywords
passivationGaAs1-Octadecanethiol
references
LU H H, XU J P, WANG L S, et al.. Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3 -plasma treated yittrium-oxynitride as interfacial passivation layer[J]. Microelectron. Reliab., 2015, 118(18):1-5.
EDMONDS M, KENT T, CHAGAROV E, et al.. Passivation of InGaAs (001)-(24) by self-limiting chemical vapor deposition of a silicon hydride control layer[J]. J. Am. Chem. Soc., 2015,137:8526-8533.
TAJIK N, PENG Z, KUYANOV P, et al.. Sulfur passivation and contact methods for GaAs nanowire solar cells[J]. Nanotechnology, 2011, 22:225402.
ZHOU L, GAO X, WANG Y H, et al.. Facet passivation of GaAs based LDs by plasma pretreatment and RF sputtered AlN film coating[J]. J. Lightwave Technol., 2013, 31(13):2297-2283.
周路, 王云华, 贾宝山, 等. 半导体激光器腔面增透膜AlN薄膜的制备[J]. 发光学报, 2011, 32(12):1292-1296. ZHOU L, WANG Y H, JIA B S, et al.. Deposition of AlN film for AR coating of semiconductor Lasers[J]. Chin. J. Lumin., 2011, 32(12):1292-1296. (in Chinese)
ROBERTSON J, GUO Y, LIN L. Defect state passivation at Ⅲ-Ⅴ oxide interfaces for complementary metal-oxide-semiconductor devices[J]. J. Appl. Phys., 2015, 117(11):112806.
曹明民, 林子曾, 王盛凯, 等. InP表面氮化对Al2O3/InP金属氧化物半导体电容界面特性及漏电特性的影响[J]. 真空科学与技术学报, 2016, 36(1):110-116. CAO M M, LIN Z C, WANG S K, et al.. Property improvement of Al2O3/InP metal oxide semiconductor capacitors by surface nitridation[J]. Chin. J. Vac. Sci. Technol., 2016, 36(1):110-116. (in Chinese)
HSUEH W J, CHEN C Y, CHANG C M. Effects of GaSb surface preparation on the characteristics of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition[J]. J. Vac. Sci. Technol.A, 2017, 35(1):01B106-1-6.
KIM S H, JOO S Y, JIN H S, et al.. Ultrathin ZnS and ZnO interfacial passivation layers for atomic-layer-deposited HfO2 films on InP substrates[J]. ACS Appl. Mater. Interf., 2016, 8(32):20880-20884.
ZHERNOKLETOV D M, DONG H, BRENNAN B, et al.. Optimization of the ammonium sulfide (NH4)2S passivation process on InSb(111)A[J]. J. Vac. Sci. Technol.B, 2012, 30(4):04E103-1-7.
HE G, GAO J, CHEN H S, et al.. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al2O3 passivation layer[J]. Appl. Mater. Interf., 2014, 6:22013-22025.
LEBEDEV M V, KUNITSYNA E V, CALVET W, et al.. Sulfur passivation of GaSb(100) surfaces:comparison of aqueous and alcoholic sulfide solutions using synchrotron radiation photoemission spectroscopy[J]. J. Phys. Chem.C, 2013, 117:15996-16004.
GHITA R V, EGRILA C C, COTIRLAN C, et al.. On the passivation of GaAs surface by sulfide compounds[J]. Digest J. Nanomater. Biostruct., 2013, 8(3):1335-1344.
LUCERO A T, BYUN Y C, QIN X Y, et al.. Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As:electrical and in-situ X-ray photoelectron spectroscopy characterization[J], Jpn. J. Appl. Phys., 2016, 55:08PC02.
CONTRERAS Y, MANCHENO-POSSO P, MUSCAT A J. Comparison of the chemical passivation of GaAs, In0.53Ga0.47As, and InSb with 1-eicosanethiol[J]. Solid State Phenomena, 2016, 255:55-60.
MANCHENO-POSSO P, MUSCAT A J. Self-assembly of alkanethiolates directs sulfur bonding with GaAs (100)[J]. Appl. Surf. Sci., 2017, 397:1-12.
CUYPERS D, FLEISCHMANN C, VAN DORP D H, et al.. Sacrificial self-assembled monolayers for the passivation of GaAs (100) surfaces and interfaces[J]. Chem. Mater., 2016, 28:5689-5701.
CHO Y J, CHA H, CHANG H S. Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell[J]. Surf. Coatings Technol., 2016, 307:1-4.
许留洋, 高欣, 袁旭泽, 等. GaAs半导体表面的等离子氮钝化特性研究[J]. 发光学报, 2016, 37(4):428-431. XU L Y, GAO X, YUAN X Z, et al.. Nitrogen-plasma passivation of GaAs semiconductor surface[J]. Chin. J. Lumin., 2016, 37(4):428-431. (in Chinese)
0
浏览量
35
下载量
1
CSCD
- 网络PDF下载
- Meta-XML下载
- BibTeX下载
- Endnote下载
- RefMan 下载
- NoteExpress下载
- NoteFirst下载
关联资源
相关文章
相关作者
相关机构
- 地址：长春市经济技术开发区东南湖大路3888号 邮编：130033
- 联系电话：0431-86176862 Email：fgxbt@126.com
- 本系统由Light学术出版中心、北京北大方正电子有限公司共建 吉ICP备11002662号-17
京公网安备11010802024621 - 本系统建议在Chrome、 IE9+ 以上版本浏览器阅读本站内容，360浏览器请切换至极速模式
- Cookies帮助我们提供服务并提供个性化体验。使用本网站，即表示您同意我们使用Cookies
