SiO2钝化提高CdSe/ZnS量子点的发光稳定性

宁平凡; 刘宏伟; 牛萍娟; 刘国旭; 李晓云; 韩丽丽; 高轶群

doi:10.3788/fgxb20183902.0109

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SiO₂钝化提高CdSe/ZnS量子点的发光稳定性

材料合成及性能 | 更新时间：2020-08-12

- SiO₂钝化提高CdSe/ZnS量子点的发光稳定性
- Enhancement of Photo-stability of Colloidal CdSe/ZnS Quantum Dots Passivated in SiO₂
- 发光学报 2018年39卷第2期页码：109-114
- 作者机构：
  
  1. 天津工业大学电气工程与自动化学院天津,300387
  2. 天津工业大学大功率半导体照明应用系统教育部工程研究中心天津,300387
  3. 易美芯光(北京)科技有限公司北京,100176
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61605145，11404239，61504095）();天津市应用基础与前沿技术研究计划（15JCQNJC41800）资助项目()
- DOI：10.3788/fgxb20183902.0109
  中图分类号： O482.31
- 纸质出版日期：2018-2-5，
  
  网络出版日期：2017-8-16，
  
  收稿日期：2017-6-6，
  
  修回日期：2017-7-26，
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宁平凡, 刘宏伟, 牛萍娟等. SiO2钝化提高CdSe/ZnS量子点的发光稳定性[J]. 发光学报, 2018,39(2): 109-114

NING Ping-fan, LIU Hong-wei, NIU Ping-juan etc. Enhancement of Photo-stability of Colloidal CdSe/ZnS Quantum Dots Passivated in SiO2[J]. Chinese Journal of Luminescence, 2018,39(2): 109-114
宁平凡, 刘宏伟, 牛萍娟等. SiO2钝化提高CdSe/ZnS量子点的发光稳定性[J]. 发光学报, 2018,39(2): 109-114 DOI： 10.3788/fgxb20183902.0109.

NING Ping-fan, LIU Hong-wei, NIU Ping-juan etc. Enhancement of Photo-stability of Colloidal CdSe/ZnS Quantum Dots Passivated in SiO2[J]. Chinese Journal of Luminescence, 2018,39(2): 109-114 DOI： 10.3788/fgxb20183902.0109.

摘要

光诱导功能退化是胶体量子点在应用中面临的主要挑战之一，本文针对这一问题研究了使用磁控溅射沉积SiO

薄膜形成钝化层来提高CdSe/ZnS量子点发光稳定性的方法。首先，通过三正辛基膦辅助连续离子层吸附反应方法合成了615 nm发光的红色CdSe/ZnS量子点。然后将量子点旋涂在SiO

/Si基片上，再通过磁控溅射方法在量子点上沉积了厚度为20 nm的SiO

薄膜作为钝化层。使用连续波激光光源分别在空气气氛和真空条件下照射样品，研究了经过不同照射时间后钝化和未钝化量子点的稳态光致发光光谱。结果表明，随着照射时间的延长，没有SiO

钝化的量子点的PL强度显著降低、PL峰值发生蓝移、FWHM不断增大。对比研究发现，由于SiO

薄膜能够阻挡空气中的水和氧，减缓了量子点表面的光诱导氧化现象，因此显著提高了CdSe/ZnS量子点的稳定性。

Abstract

The photo-instability and degradation of colloidal quantum dots (QDs) are major challenges in their applications. We report photo-stability enhancement of colloidal CdSe/ZnS QDs passivated in SiO

thin film deposited by RF magnetron sputtering. First

the red (615 nm emission) CdSe/ZnS QDs were synthesized by tri-n-octylphosphine assisted successive ionic layer adsorption and reaction method. The QDs were then spin-coated to the SiO

/Si substrate

and a SiO

film with a thickness of 20 nm was deposited on the QDs as a passivation layer by magnetron sputtering. The photoluminescence spectra of passivated and un-passivated QDs were investigated by using a continuous wave laser source

which was irradiated in air and vacuum respectively. The results show that the PL intensity of the QDs without SiO

passivation decreases significantly

and the PL peak shifts to blue and the FWHM increases continuously with the increasing of the irradiation time. Comparative analysis shows that SiO

film can prevent the oxidation of QD surface from water vapor and oxygen molecules and thus the stability of CdSe/ZnS QDs is significantly improved.

关键词

光致发光量子点CdSe/ZnS发光稳定性SiO2钝化

Keywords

photoluminescencequantum dotsCdSe/ZnSphoto-stabilitySiO2 passivation

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