正方形孔径纳米半球阵列提高LED光提取效率研究

刘顺瑞; 王丽; 张明磊; 冷雁冰; 孙艳军

doi:10.3788/fgxb20173812.1668

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正方形孔径纳米半球阵列提高LED光提取效率研究

发光学应用及交叉前沿 | 更新时间：2020-08-12

- 正方形孔径纳米半球阵列提高LED光提取效率研究
- Study of Light Extraction Efficiency for LED with Square Aperture Nano-hemisphere Array
- 发光学报 2017年38卷第12期页码：1668-1674
- 作者机构：
  
  长春理工大学光电工程学院, 吉林长春 130022
- 作者简介：
- 基金信息：
  
  总装预研基金（9140A10011515BQ03135）资助项目()
- DOI：10.3788/fgxb20173812.1668
  中图分类号： TN383
- 纸质出版日期：2017-12-5，
  
  网络出版日期：2017-9-18，
  
  收稿日期：2017-5-10，
  
  修回日期：2017-9-17，
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刘顺瑞, 王丽, 张明磊等. 正方形孔径纳米半球阵列提高LED光提取效率研究[J]. 发光学报, 2017,38(12): 1668-1674

LIU Shun-rui, WANG li, ZHANG Ming-lei etc. Study of Light Extraction Efficiency for LED with Square Aperture Nano-hemisphere Array[J]. Chinese Journal of Luminescence, 2017,38(12): 1668-1674
刘顺瑞, 王丽, 张明磊等. 正方形孔径纳米半球阵列提高LED光提取效率研究[J]. 发光学报, 2017,38(12): 1668-1674 DOI： 10.3788/fgxb20173812.1668.

LIU Shun-rui, WANG li, ZHANG Ming-lei etc. Study of Light Extraction Efficiency for LED with Square Aperture Nano-hemisphere Array[J]. Chinese Journal of Luminescence, 2017,38(12): 1668-1674 DOI： 10.3788/fgxb20173812.1668.

摘要

为提高氮化镓（GaN）基发光二极管（LED）的光提取效率，基于等效介质理论设计了底面100%占空比、半径为320 nm的正方形孔径纳米半球阵列。利用时域有限差分法（FDTD）对正方形孔径纳米半球阵列结构底面占空比、半径对光提取效率的影响进行了仿真计算研究。仿真结果表明：LED p-GaN表面刻蚀半径为320 nm、底面占空比为100%的正方形孔径纳米半球阵列的光提取效率最优。采用电子束曝光配合热回流技术和ICP刻蚀完成正方形孔径纳米半球阵列的GaN基LED制作及测试实验。结果表明：在20 mA和150 mA工作电流下，有微纳结构的LED较无微纳结构的参考样品的发光效率分别提高4.67倍和4.59倍，计算结果与实验结果比较一致，说明加入方形孔径纳米半球阵列可以有效提高LED光提取效率。

Abstract

Based on the equivalent medium theory

an square aperture nano-hemisphere structure with bottom surface fill-factor of 100% and spherical vector height of 320 nm was designed and put into use in the course of experiment as it sought to make GaN-based LED more efficient. Guided by the finite-difference time-domain method(FDTD)

a simulation research on how the parameters of structure influenced the light extraction efficiency performance

such as the spherical vector height

the bottom surface fill-factor was schemed to be conducted in the experiment. The study provided the evidence that the optical light extraction efficiency could be achieved on the occasion that the square aperture nano-hemisphere array with a radius of 320 nm and a bottom surface fill-factor 100% p-GaN was etched and presented on the surface of LED. Such technologies as electron beam exposure combined with thermal reflow and ICP etching should be applied and come into service for building square aperture nano-hemisphere arrays. In strict accordance with calculation results

under the working current of 20 mA and 150 mA

the luminous efficiency of the LED with the nano structure is 4.67 times and that of the reference sample is less than 4.59 times

which shows that square aperture nano-hemisphere array promises to help make the light extraction efficiency of LED better

according to the electroluminescence test.

关键词

发光二极管时域有限差分法纳米半球光提取效率电致发光

Keywords

LEDfinite-difference time-domain methodnano-hemispherelight extraction efficiencyelectroluminescence

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