WU Li-fan, MIAO Rui-xia, LI Yong-feng etc. High Sensitivity Hall Devices with AlSb/InAs Quantum Well Structure[J]. Chinese Journal of Luminescence, 2017,38(12): 1650-1653
WU Li-fan, MIAO Rui-xia, LI Yong-feng etc. High Sensitivity Hall Devices with AlSb/InAs Quantum Well Structure[J]. Chinese Journal of Luminescence, 2017,38(12): 1650-1653 DOI: 10.3788/fgxb20173812.1650.
An unintentionally doped AlSb/InAs quantum well (QW) structure and a Si- doped quantum well structure on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). The dependence of sheet electron density and electron mobility on the measurement temperature were investigated. It is found that electron mobility as high as 25 000 cm
2
V
-1
s
-1
has been achieved for 300 K in the Si- doped quantum well structure. The Hall devices with high sensitivity and good temperature stability were fabricated based on the Si- doped AlSb/InAs quantum well structures. Their sensitivity is markedly superior to Hall devices of an unintentionally doped AlSb/InAs quantum well.
关键词
霍尔器件量子阱&delta掺杂分子束外延
Keywords
Hall devicequantum well&delta-dopingmolecular beam epitaxy
references
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