高灵敏度InAs/AlSb量子阱的霍尔器件

武利翻; 苗瑞霞; 李永峰; 杨小峰

doi:10.3788/fgxb20173812.1650

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高灵敏度InAs/AlSb量子阱的霍尔器件

器件制备及器件物理 | 更新时间：2020-08-12

- 高灵敏度InAs/AlSb量子阱的霍尔器件
- High Sensitivity Hall Devices with AlSb/InAs Quantum Well Structure
- 发光学报 2017年38卷第12期页码：1650-1653
- 作者机构：
  
  西安邮电大学电子工程学院, 陕西西安 710121
- 作者简介：
- 基金信息：
  
  国家自然科学基金青年基金（51302215）();陕西省教育厅科研计划（17JK0698）资助项目()
- DOI：10.3788/fgxb20173812.1650
  中图分类号： TN382;TN305
- 纸质出版日期：2017-12-5，
  
  收稿日期：2017-5-5，
  
  修回日期：2017-9-30，
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武利翻, 苗瑞霞, 李永峰等. 高灵敏度InAs/AlSb量子阱的霍尔器件[J]. 发光学报, 2017,38(12): 1650-1653

WU Li-fan, MIAO Rui-xia, LI Yong-feng etc. High Sensitivity Hall Devices with AlSb/InAs Quantum Well Structure[J]. Chinese Journal of Luminescence, 2017,38(12): 1650-1653
武利翻, 苗瑞霞, 李永峰等. 高灵敏度InAs/AlSb量子阱的霍尔器件[J]. 发光学报, 2017,38(12): 1650-1653 DOI： 10.3788/fgxb20173812.1650.

WU Li-fan, MIAO Rui-xia, LI Yong-feng etc. High Sensitivity Hall Devices with AlSb/InAs Quantum Well Structure[J]. Chinese Journal of Luminescence, 2017,38(12): 1650-1653 DOI： 10.3788/fgxb20173812.1650.

摘要

用分子束外延在GaAs（001）衬底上生长了两个量子阱结构的霍尔器件，一个是没有掺杂的量子阱结构，一个是Si-掺杂的量子阱结构。研究了霍尔器件的面电子浓度和电子迁移率与温度的关系。结果表明，在300 K下，Si-掺杂的量子阱结构的电子迁移率高达25 000 cm

-1

，并且该器件输入电阻和输出电阻较低。同时，Si-掺杂的量子阱结构霍尔器件的敏感度好于没有掺杂的量子阱结构霍尔器件。

Abstract

An unintentionally doped AlSb/InAs quantum well (QW) structure and a Si- doped quantum well structure on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). The dependence of sheet electron density and electron mobility on the measurement temperature were investigated. It is found that electron mobility as high as 25 000 cm

-1

has been achieved for 300 K in the Si- doped quantum well structure. The Hall devices with high sensitivity and good temperature stability were fabricated based on the Si- doped AlSb/InAs quantum well structures. Their sensitivity is markedly superior to Hall devices of an unintentionally doped AlSb/InAs quantum well.

关键词

霍尔器件量子阱&delta掺杂分子束外延

Keywords

Hall devicequantum well&delta-dopingmolecular beam epitaxy

references

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