基于PBDT-TT-F:PCBM体异质结红光探测器的光电特性

安涛; 涂传宝; 杨圣; 吴俊宇

doi:10.3788/fgxb20173812.1643

您当前的位置：

首页 >

文章列表页 >

基于PBDT-TT-F:PCBM体异质结红光探测器的光电特性

器件制备及器件物理 | 更新时间：2020-08-12

- 基于PBDT-TT-F:PCBM体异质结红光探测器的光电特性
- Photovoltaic Characteristics of PBDT-TT-F:PCBM Based Bulk Heterojunction Red Detector
- 发光学报 2017年38卷第12期页码：1643-1649
- 作者机构：
  
  西安理工大学, 陕西西安 710048
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20173812.1643
  中图分类号： TN304.2
- 纸质出版日期：2017-12-5，
  
  网络出版日期：2017-9-11，
  
  收稿日期：2017-5-2，
  
  修回日期：2017-9-30，
扫描看全文
安涛, 涂传宝, 杨圣等. 基于PBDT-TT-F:PCBM体异质结红光探测器的光电特性[J]. 发光学报, 2017,38(12): 1643-1649

AN Tao, TU Chuan-bao, YANG Sheng etc. Photovoltaic Characteristics of PBDT-TT-F:PCBM Based Bulk Heterojunction Red Detector[J]. Chinese Journal of Luminescence, 2017,38(12): 1643-1649
安涛, 涂传宝, 杨圣等. 基于PBDT-TT-F:PCBM体异质结红光探测器的光电特性[J]. 发光学报, 2017,38(12): 1643-1649 DOI： 10.3788/fgxb20173812.1643.

AN Tao, TU Chuan-bao, YANG Sheng etc. Photovoltaic Characteristics of PBDT-TT-F:PCBM Based Bulk Heterojunction Red Detector[J]. Chinese Journal of Luminescence, 2017,38(12): 1643-1649 DOI： 10.3788/fgxb20173812.1643.

摘要

采用旋涂工艺与蒸镀工艺结合的方法制备了PBDT-TT-F：PCBM体异质结红光探测器，研究了活性层的混合比例和厚度、退火温度等因素对器件光电特性的影响。实验结果表明：活性层PBDT-TT-F：PCBM的混合质量比为1：1.5、厚度为150 nm、退火温度为100℃、时间为15 min时制备的器件性能最佳，在波长为650 nm、功率为6.6 mW/cm

的光照下，探测器光电流密度可达到0.85 mA/cm

，光响应度达到128 mA/W。

Abstract

PBDT-TT-F:PCBM based heterojunction red photodetectors were fabricated by the experimental method combined with spin coating process and vapor deposition process. The effects of the mixing degree and thickness of the active layer

the annealing temperature and other factors on the photoelectric properties of the device were studied. The experimental results show that the performance of the device is the best with the mixing mass ratio of PBDT-TT-F:PCBM of 1:1.5

the thickness of 150 nm

the annealing temperature of 100℃

and the annealing time of 15 min

respectively. The photocurrent density of the diode is 0.85 mA/cm

and the light response is 128 mA/W.

关键词

有机光电探测器红光活性层光电特性

Keywords

organic detectorsred lightactive layerphotoelectric characteristics

references

VALOUCH S, H NES C, KETTLITZ S W, et al.. Solution processed small molecule organic interfacial layers for low dark current polymer photodiodes[J]. Org. Electron., 2012, 13(11):2727-2732.

HAN M G, PARK K B, BULLIARD X, et al.. Narrow-band organic photodiodes for high-resolution imaging[J]. ACS Appl. Mater. Interf., 2016, 8(39):26143-26151.

李东, 李文海, 董桂芳, 等. 有机光敏二极管的功能材料探索及其器件结构[J]. 化学进展, 2014, 26(12):1889-1898. LI D, LI W H, DONG G F, et al.. The functional materials and structure of organic photodiodes[J]. Prog. Chem., 2014, 26(12):1889-1898. (in Chinese)

TANG C W. Two-layer organic photovoltaic cell[J]. Appl. Phys. Lett., 1986, 48(2):183-185.

RAMUZ M, BRUGI L, WINNEWISSER C, et al.. High sensitivity organic photodiodes with low dark currents and increased lifetimes[J]. Org. Electron., 2008, 9(3):369-376.

ALVARADO S F, SEIDLER P F, LIDZEY D G. Direct determination of the exciton binding energy of conjugated polymers using a scanning tunneling microscope[J]. Phys. Rev. Lett., 1998, 81:1082-1087.

HALLS J J M, CORNIL J, DOS SANTOS D A. Charge-and energy-transfer processes at polymer/polymer interfaces:a joint experimental and theoretical study[J]. Phys. Rev., 1999, 60:5727-5733.

李丹, 梁然, 岳鹤. 给受体共混质量比对P3HT:PCBM薄膜结构和器件性能的影响[J]. 物理化学学报, 2012, 28:1373-1379. LI D, LIANG R, YUE H. Influence of donor and acceptor mass ratios on P3HT:PCBM film structure and device performance[J]. Acta Phys. Chim. Sinica, 2012, 28:1373-1379. (in Chinese)

AZIMY A, HOSSEINI S M A, RAMEZANIAN N. Investigation of donor-acceptor composition ratio and annealing effects on performances of organic solar cells based on P3HT:C60[J]. J. Photopolym. Sci. Tech., 2016, 29(5):775-780.

LUO X, LV W, DU L, et al.. Insight into trap state dynamics for exploiting current multiplication in organic photodetectors[J]. Phys. Stat. Sol. RRL, 2016, 10(6):485-492.

JANSEN-VAN VUUREN R D, ARMIN A, PANDEY A K, et al.. Organic photodiodes:the future of full color detection and image sensing[J]. Adv. Mater., 2016, 28(24):4766-4802.

BILGAIYAN A, DIXIT T, PALANI I A, et al.. Improved photoresponse of hybrid ZnO/P3HT bilayered photodetector obtained through oriented growth of ZnO nanorod arrays and the use of hole injection layer[J]. J. Electron. Mater., 2015, 44(8):2842-2848.

LEE K H, LEE H S, LEE K, et al.. An almost transparent image pixel with a pentacene/ZnO photodiode, a pentacene thin-film transistor, and a 6,13-pentacenequinone phosphor layer[J]. Adv. Mater., 2011, 23(10):1231-1236.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

交流驱动无电学接触GaN基Micro⁃LED器件光电特性

无电学接触型氮化镓基Micro⁃LED器件光电性能

半透明钙钛矿太阳能电池活性层与电极层研究进展

一种新型铕配合物的有机电致发光性能