铝镓氮薄膜双光子吸收效应

张玮; 王迎威; 肖思; 顾兵; 何军

doi:10.3788/fgxb20173812.1605

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铝镓氮薄膜双光子吸收效应

材料合成及性能 | 更新时间：2020-08-12

- 铝镓氮薄膜双光子吸收效应
- Two-photon Absorption in Al_xGa_1-xN Films
- 发光学报 2017年38卷第12期页码：1605-1610
- 作者机构：
  
  1. 中南大学物理与电子学院超微结构与超快过程湖南省重点实验室,湖南长沙,410083
  2. 东南大学先进光子学中心,江苏南京,210096
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61222406，11174371）资助项目()
- DOI：10.3788/fgxb20173812.1605
  中图分类号： O433.1;O472+.3
- 纸质出版日期：2017-12-5，
  
  收稿日期：2017-4-16，
  
  修回日期：2017-5-5，
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张玮, 王迎威, 肖思等. 铝镓氮薄膜双光子吸收效应[J]. 发光学报, 2017,38(12): 1605-1610

ZHANG Wei, WANG Ying-wei, XIAO Si etc. Two-photon Absorption in AlxGa1-xN Films[J]. Chinese Journal of Luminescence, 2017,38(12): 1605-1610
张玮, 王迎威, 肖思等. 铝镓氮薄膜双光子吸收效应[J]. 发光学报, 2017,38(12): 1605-1610 DOI： 10.3788/fgxb20173812.1605.

ZHANG Wei, WANG Ying-wei, XIAO Si etc. Two-photon Absorption in AlxGa1-xN Films[J]. Chinese Journal of Luminescence, 2017,38(12): 1605-1610 DOI： 10.3788/fgxb20173812.1605.

摘要

基于飞秒激发Z扫描实验技术，研究了氮化镓薄膜和不同铝掺杂含量的掺铝氮化镓（以下简称铝镓氮）薄膜的超快非线性光学响应特性。在开孔Z-scan测试中，纯GaN晶体薄膜表现出典型的双光子吸收特性，双光子吸收系数为3.5 cm/GW，且随着激发光强的增大而逐渐减小。随后测试了不同铝掺杂含量的Al

N薄膜的非线性吸收系数。结果表明，随着铝掺杂摩尔分数的提高（0，19%，32%，42%），非线性吸收系数逐渐减小（18，10，6，5.6 cm/GW）。结合半导体非线性吸收理论分析，Al

N薄膜材料的非线性过程主要是双光子吸收主导非线性响应物理过程。实验结果与半导体双光子吸收过程Sheik-Bahae理论符合得很好。

Abstract

The ultrafast nonlinear absorption response of GaN and Al

N films was studied by employing conventional femto-second Z-scan measurements. In the Z-scan

GaN films exhibit typical two-photon absorption property and with a two-photon absorption coefficient of 3.5 cm/GW. Simultaneously

the two-photon absorption coefficient decreases with the increase of the excitation intensity. GaN films possess excellent nonlinear optical property which is dominated by two-or multi-photon absorption. The Z-scan measurement was further used for Al

N films with different Al element content. It is found that the two-photon absorption coefficient of Al

N films closely dependent on the mole fraction of Al element. The two-photon absorption coefficient decreases from 18 cm/GW to 5.6 cm/GW with the increase of Al mole fraction from 0 to 0.42. Considering the conventional semiconductor nonlinear absorption theory

it is believed that the observed nonlinear absorption originates from the two-photon absorption dominant nonlinear response. The experimental results are in good agreement with the Sheik-Bahae theoretical prediction for two-photon absorption coefficient.

关键词

铝镓氮薄膜双光子吸收能带调控

Keywords

AlxGa1-xN filmstwo-photon absorptionband-gap engineering

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