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北京交通大学光电子技术研究所 北京,100044
[ "王韬(1992-),男,内蒙古呼和浩特人,硕士研究生,2010年于电子科技大学获得学士学位,主要从事金属氧化物薄膜晶体管方面的研究。E-mail:14121639@bjtu.edu.cn" ]
[ "张希清(1961-),男,黑龙江哈尔滨人,博士,教授,1995年于中国科学院长春物理研究所获得博士学位,主要从事发光、显示与新能源技术等方面的研究。E-mail:xqzhang@bjtu.edu.cn" ]
纸质出版日期:2017-11-5,
网络出版日期:2017-7-13,
收稿日期:2017-3-22,
修回日期:2017-5-8,
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王韬, 张希清,. 非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响[J]. 发光学报, 2017,38(11): 1539-1544
WANG Tao, ZHANG Xi-qing,. Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor[J]. Chinese Journal of Luminescence, 2017,38(11): 1539-1544
王韬, 张希清,. 非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响[J]. 发光学报, 2017,38(11): 1539-1544 DOI: 10.3788/fgxb20173811.1539.
WANG Tao, ZHANG Xi-qing,. Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor[J]. Chinese Journal of Luminescence, 2017,38(11): 1539-1544 DOI: 10.3788/fgxb20173811.1539.
为了优化镁铟锡氧薄膜晶体管(MITO-TFT)的性能,采用磁控溅射法制备MITO-TFT并分别研究了退火温度和退火气氛(O
2
流量)对器件性能的影响。实验结果表明,O
2
流量为400 cm
3
/min、退火温度为750℃的MITO薄膜为非晶态,且其对应薄膜晶体管有最佳性能,其饱和迁移率为12.66 cm
2
/(Vs),阈值电压为0.8 V,开关比达到10
7
。适当的退火处理可以有效减少缺陷与界面态密度,并提高器件性能。
In order to optimize the performance of Mg-In-Sn-O thin film transistors (MITO-TFTs)
MITO-TFTs were fabricated by radio frequency magnetron sputtering. The electrical properties on the effect of the annealing temperature and annealing ambient (O
2
flow rate) were investigated. The 750℃ annealed MITO thin film with 400 cm
3
/min O
2
flow is amorphous and the corresponding TFT shows best performance with saturation field effect mobility of 12.66 cm
2
/(Vs)
threshold voltage of 0.8 V and on/off ratio reaches 10
7
. Proper annealing will reduce defect and interface states density
improve the device performance effectively.
MITO-TFT氧化物半导体迁移率退火温度退火氧气流量
MITO-TFToxide semiconductorfiled effect mobilityannealing temperatureannealing O2 flow rate
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