非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响

王韬; 张希清

doi:10.3788/fgxb20173811.1539

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非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响
- Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor
- 发光学报 2017年38卷第11期页码：1539-1544
- 作者机构：
  
  北京交通大学光电子技术研究所北京,100044
- 作者简介：
  
  [ "王韬(1992-),男,内蒙古呼和浩特人,硕士研究生,2010年于电子科技大学获得学士学位,主要从事金属氧化物薄膜晶体管方面的研究。E-mail:14121639@bjtu.edu.cn" ]
  [ "张希清(1961-),男,黑龙江哈尔滨人,博士,教授,1995年于中国科学院长春物理研究所获得博士学位,主要从事发光、显示与新能源技术等方面的研究。E-mail:xqzhang@bjtu.edu.cn" ]
- 基金信息：
  
  国家自然科学基金（51372016，61275022）资助项目()
- DOI：10.3788/fgxb20173811.1539
  中图分类号： TN321+.5
- 纸质出版日期：2017-11-5，
  
  网络出版日期：2017-7-13，
  
  收稿日期：2017-3-22，
  
  修回日期：2017-5-8，
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王韬, 张希清,. 非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响[J]. 发光学报, 2017,38(11): 1539-1544

WANG Tao, ZHANG Xi-qing,. Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor[J]. Chinese Journal of Luminescence, 2017,38(11): 1539-1544
王韬, 张希清,. 非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响[J]. 发光学报, 2017,38(11): 1539-1544 DOI： 10.3788/fgxb20173811.1539.

WANG Tao, ZHANG Xi-qing,. Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor[J]. Chinese Journal of Luminescence, 2017,38(11): 1539-1544 DOI： 10.3788/fgxb20173811.1539.

摘要

为了优化镁铟锡氧薄膜晶体管（MITO-TFT）的性能，采用磁控溅射法制备MITO-TFT并分别研究了退火温度和退火气氛（O

流量）对器件性能的影响。实验结果表明，O

流量为400 cm

/min、退火温度为750℃的MITO薄膜为非晶态，且其对应薄膜晶体管有最佳性能，其饱和迁移率为12.66 cm

/（Vs），阈值电压为0.8 V，开关比达到10

。适当的退火处理可以有效减少缺陷与界面态密度，并提高器件性能。

Abstract

In order to optimize the performance of Mg-In-Sn-O thin film transistors (MITO-TFTs)

MITO-TFTs were fabricated by radio frequency magnetron sputtering. The electrical properties on the effect of the annealing temperature and annealing ambient (O

flow rate) were investigated. The 750℃ annealed MITO thin film with 400 cm

/min O

flow is amorphous and the corresponding TFT shows best performance with saturation field effect mobility of 12.66 cm

/(Vs)

threshold voltage of 0.8 V and on/off ratio reaches 10

. Proper annealing will reduce defect and interface states density

improve the device performance effectively.

关键词

MITO-TFT氧化物半导体迁移率退火温度退火氧气流量

Keywords

MITO-TFToxide semiconductorfiled effect mobilityannealing temperatureannealing O2 flow rate

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