浏览全部资源
扫码关注微信
青岛科技大学数理学院, 山东 青岛 266061
纸质出版日期:2017-11-5,
网络出版日期:2017-7-13,
收稿日期:2017-4-6,
修回日期:2017-5-11,
扫 描 看 全 文
李惠, 贾晓卫, 魏泽坤等. 高速光通讯面发射激光器的热分析及优化[J]. 发光学报, 2017,38(11): 1516-1522
LI Hui, JIA Xiao-wei, WEI Ze-kun etc. Thermal Analysis and Structure Optimization of High-speed Optical Communication-VCSEL[J]. Chinese Journal of Luminescence, 2017,38(11): 1516-1522
李惠, 贾晓卫, 魏泽坤等. 高速光通讯面发射激光器的热分析及优化[J]. 发光学报, 2017,38(11): 1516-1522 DOI: 10.3788/fgxb20173811.1516.
LI Hui, JIA Xiao-wei, WEI Ze-kun etc. Thermal Analysis and Structure Optimization of High-speed Optical Communication-VCSEL[J]. Chinese Journal of Luminescence, 2017,38(11): 1516-1522 DOI: 10.3788/fgxb20173811.1516.
垂直腔面发射激光器(VCSEL)已成为短距离数据通信传输系统的首选光源。热限制是VCSEL器件调制带宽进一步增加的一个主要的制约因素。本文基于有限元分析的方法对影响980 nm-VCSEL器件有源区温度的参数,如驱动电流、氧化孔径尺寸、氧化层材料等做了比较分析,还数值分析了二元系GaAs/AlAs材料DBR用于高速低能耗VCSEL器件的优势,为绿色光子器件设计提供优化思路。
Vertical-cavity surface-emitting lasers (VCSELs) have already become the first choice of light sources for short-reach optical interconnects. As the continues growth of optical interconnects used for data center
there is an urgent need for high-speed VCSEL devices which can support high data bandwidth requirement. This paper performs a comparative thermal analysis of 980 nm VCSELs based on the finite element method. Parameters which can influence the active region temperature are studied in this work including bias current
oxide aperture diameters
and material used for DBRs. Also
the improvement by using binary GaAs/AlAs Bottom-DBR is numerable studied by extracted thermal resistance form thermal simulation. The improvement in thermal performance makes this strategy useful for next generation green photonic device design.
垂直腔面发射激光器热分析高速有源区
VCSELthermal analysishigh-speedactive region
TATUM J A. The evolution of 850 nm VCSELs from 10 Gb/s to 25 and 56 Gb/s[C]. Optical Fiber Communications Conference and Exhibition (OFC), San Francisco, OSA, 2014:1-3.
TAN M R T. Commercial applications of vertical cavity surface emitting lasers[C]. Conference on Lasers and Electro-Optics (CLEO), San Francisco, 2000:201.
IGA K. Vertical-cavity surface-emitting laser (VCSEL)[J]. Proceedings of The IEEE, 2013, 101(10):2229-2233.
COLLINS D, LI N, KUCHTA D, et al.. Development of high-speed VCSELs:10 Gb/s serial links and beyond[J]. SPIE, 2008:6908:690809-1-9.
BENNER A F, IGNATOWSKI M, KASH J A, et al.. Exploitation of optical interconnects in future server architectures[J]. IBM J. Res. Develop., 2005, 49(4-5):755-755.
KAPON E, SIRBU A. Long-wavelength VCSELs:power-efficient answer[J]. Nat. Photon., 2009, 3:27-29.
TATUM J A. Evolution of VCSELs[J]. SPIE, 2014, 9001:90010C.
IGA K. Surface-emitting laser-its birth and generation of new optoelectronics field[J]. IEEE J. Select. Top. Quant. Electron., 2000, 6(6):1201-1215.
MENA P V, MORIKUNI J J, KANG S M, et al.. A simple rate-equation-based thermal VCSEL model[J]. J. Lightwave Technol., 1999, 17(5):865.
MIEYEVILLE F, JACQUEMOD G, GAFFIOT F, et al.. A behavioural opto-electro-thermal VCSEL model for simulation of optical links[J]. Sens. Actuators A:Phys., 2001, 88(3):209-219.
LEE H K, SONH Y M, LEE Y T, et al.. Thermal analysis of asymmetric intracavity-contacted oxide-aperture VCSELs for efficient heat dissipation[J]. Solid-State Electron., 2009, 53(10):1086-1091.
DESGREYS P, KARRAY M, CHARLOT J J, et al.. Opto-electro-thermal model of a VCSEL array using VHDL-AMS[C]. IEEE International Workshop on Behavioral Modeling and Simulation, Santa Rose, California, 2002:123-126.
OSINSKI M, NAKWASKI W. Effective thermal conductivity analysis of 1.55m InGaAsP/InP vertical-cavity top-surface-emitting microlasers[J]. Electron. Lett., 1993, 29(11):1015-1016.
WEBB C, JULIAN J. Handbook of Laser Technology and Applications:Laser Design and Laser Systems. Vertical-cavity Surface-emitting Lasers[M]. New York:CRC Press, 2004.
PIPREK J. Electro-thermal analysis of oxide-confined vertical-cavity lasers[J]. Phys. Stat. Sol.(a), 2001, 188(3):905-912.
ADACHI S. Lattice thermal conductivity of group-Ⅳ and Ⅲ-Ⅴ semiconductor alloys[J]. J. Appl. Phys., 2007, 102(6):063502-1-7.
NAKWASKI W. Thermal conductivity of binary, ternary, and quaternary Ⅲ-Ⅴ compounds[J]. J. Appl. Phys., 1988, 64(1):159-166.
LI H, WOLF P, MOSER P, et al.. Energy-efficient and temperature-stable 980 nm VCSELs for 35 Gb/s error-free data transmission at 85℃ with 139 fJ/bit dissipated heat[J]. IEEE Photon. Technol., 2014, 26(23):2349-2352.
ZHAO G, DEPPE D G. Thermal performance of oxide-free lithographic VCSELs[C]. IEEE Photonic Society 24th Annual Meeting, Arlington, 2011:ThDD3.
MACDOUGAL M H, GESKE J, LIN C K, et al.. Thermal Impedance of VCSEL's with AlO-GaAs DBR's[J]. IEEE Photon. Technol. Lett., 1998, 10(1):15-17.
0
浏览量
72
下载量
3
CSCD
关联资源
相关文章
相关作者
相关机构