高In组分InGaNAs/GaAs量子阱的生长及发光特性

单睿; 周海春; 郝瑞亭; 欧全宏; 郭杰

doi:10.3788/fgxb20173811.1510

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高In组分InGaNAs/GaAs量子阱的生长及发光特性

器件制备及器件物理 | 更新时间：2020-08-12

- 高In组分InGaNAs/GaAs量子阱的生长及发光特性
- Growth and Photoluminescence Characteristics of InGaNAs/GaAs QW with High In Composition
- 发光学报 2017年38卷第11期页码：1510-1515
- 作者机构：
  
  1. 云南省光电信息技术重点实验室,云南昆明,650500
  2. 云南师范大学物理与电子信息学院,云南昆明,650500
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61274137，11304274）();云南省教育厅基金（2014Z043）资助项目()
- DOI：10.3788/fgxb20173811.1510
  中图分类号： TN21
- 纸质出版日期：2017-11-5，
  
  网络出版日期：2017-10-12，
  
  收稿日期：2017-4-13，
  
  修回日期：2017-9-7，
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单睿, 周海春, 郝瑞亭等. 高In组分InGaNAs/GaAs量子阱的生长及发光特性[J]. 发光学报, 2017,38(11): 1510-1515

SHAN Rui, ZHOU Hai-chun, HAO Rui-ting etc. Growth and Photoluminescence Characteristics of InGaNAs/GaAs QW with High In Composition[J]. Chinese Journal of Luminescence, 2017,38(11): 1510-1515
单睿, 周海春, 郝瑞亭等. 高In组分InGaNAs/GaAs量子阱的生长及发光特性[J]. 发光学报, 2017,38(11): 1510-1515 DOI： 10.3788/fgxb20173811.1510.

SHAN Rui, ZHOU Hai-chun, HAO Rui-ting etc. Growth and Photoluminescence Characteristics of InGaNAs/GaAs QW with High In Composition[J]. Chinese Journal of Luminescence, 2017,38(11): 1510-1515 DOI： 10.3788/fgxb20173811.1510.

摘要

采用分子束外延技术（MBE）在GaAs衬底上外延生长高In组分（

40%） InGaNAs/GaAs量子阱材料，工作波长覆盖1.3~1.55m光纤通信波段。利用室温光致发光（PL）光谱研究了N原子并入的生长机制和InGaNAs/GaAs量子阱的生长特性。结果表明：N组分增加会引入大量非辐射复合中心；随着生长温度从480℃升高到580℃，N摩尔分数从2%迅速下降到0.2%；N并入组分几乎不受In组分和As压的影响，黏附系数接近1；生长温度在410℃、Ⅴ/Ⅲ束流比在25左右时，In

0.4

0.6

0.01

0.99

/GaAs量子阱PL发光强度最大，缺陷和位错最少；高生长速率可以获得较短的表面迁移长度和较好的晶体质量。

Abstract

InGaNAs/GaAs quantum-well (QW) with high In composition (>40%) which covered the optical fiber communication wavelength range of 1.3-1.55 was grown on GaAs substrate by molecular beam epitaxy (MBE). The characteristics of N atom incorporation and growth properties for InGaNAs/GaAs QW were studied by photo luminescence (PL) spectra at room temperature. The results show that the increasing of N composition can result in a large number of non-radiative recombination centers. The mole fraction of N decreases sharply from 2% to 0.2% with the growth temperature increasing from 480℃ to 580℃. The change of In composition and As pressure cannot influence the incorporation of N atoms and the adhesion coefficient of N is about 1. The PL intensity at 1.3 for InGaNAs/GaAs QW is strongest at the growth temperature of 410℃ and Ⅴ/Ⅲ ratio of~25. Higher growth rate can obtain shorter surface migration length and improve the crystal quality.

关键词

InGaNAs量子阱分子束外延光致发光光谱

Keywords

InGaNAsquantum wellmolecular beam epitaxyphotoluminescence

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