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1. 云南省光电信息技术重点实验室,云南 昆明,650500
2. 云南师范大学 物理与电子信息学院,云南 昆明,650500
纸质出版日期:2017-11-5,
网络出版日期:2017-10-12,
收稿日期:2017-4-13,
修回日期:2017-9-7,
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单睿, 周海春, 郝瑞亭等. 高In组分InGaNAs/GaAs量子阱的生长及发光特性[J]. 发光学报, 2017,38(11): 1510-1515
SHAN Rui, ZHOU Hai-chun, HAO Rui-ting etc. Growth and Photoluminescence Characteristics of InGaNAs/GaAs QW with High In Composition[J]. Chinese Journal of Luminescence, 2017,38(11): 1510-1515
单睿, 周海春, 郝瑞亭等. 高In组分InGaNAs/GaAs量子阱的生长及发光特性[J]. 发光学报, 2017,38(11): 1510-1515 DOI: 10.3788/fgxb20173811.1510.
SHAN Rui, ZHOU Hai-chun, HAO Rui-ting etc. Growth and Photoluminescence Characteristics of InGaNAs/GaAs QW with High In Composition[J]. Chinese Journal of Luminescence, 2017,38(11): 1510-1515 DOI: 10.3788/fgxb20173811.1510.
采用分子束外延技术(MBE)在GaAs衬底上外延生长高In组分(
>
40%) InGaNAs/GaAs量子阱材料,工作波长覆盖1.3~1.55m光纤通信波段。利用室温光致发光(PL)光谱研究了N原子并入的生长机制和InGaNAs/GaAs量子阱的生长特性。结果表明:N组分增加会引入大量非辐射复合中心;随着生长温度从480℃升高到580℃,N摩尔分数从2%迅速下降到0.2%;N并入组分几乎不受In组分和As压的影响,黏附系数接近1;生长温度在410℃、Ⅴ/Ⅲ束流比在25左右时,In
0.4
Ga
0.6
N
0.01
As
0.99
/GaAs量子阱PL发光强度最大,缺陷和位错最少;高生长速率可以获得较短的表面迁移长度和较好的晶体质量。
InGaNAs/GaAs quantum-well (QW) with high In composition (>40%) which covered the optical fiber communication wavelength range of 1.3-1.55 was grown on GaAs substrate by molecular beam epitaxy (MBE). The characteristics of N atom incorporation and growth properties for InGaNAs/GaAs QW were studied by photo luminescence (PL) spectra at room temperature. The results show that the increasing of N composition can result in a large number of non-radiative recombination centers. The mole fraction of N decreases sharply from 2% to 0.2% with the growth temperature increasing from 480℃ to 580℃. The change of In composition and As pressure cannot influence the incorporation of N atoms and the adhesion coefficient of N is about 1. The PL intensity at 1.3 for InGaNAs/GaAs QW is strongest at the growth temperature of 410℃ and Ⅴ/Ⅲ ratio of~25. Higher growth rate can obtain shorter surface migration length and improve the crystal quality.
InGaNAs量子阱分子束外延光致发光光谱
InGaNAsquantum wellmolecular beam epitaxyphotoluminescence
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郑新和, 夏宇, 刘三姐, 等. GaNAs基超晶格太阳电池的分子束外延生长与器件特性[J]. 发光学报, 2015, 36(8):923-926. ZHENG X H, XIA Y, LIU S J, et al.. MBE growth of GaNAs-based superlattice solar cells and device properties[J]. Chin. J. Lumin., 2015, 36(8):923-926. (in Chinese)
胡伟, 曾庆高, 叶嗣荣, 等. GaAs/Al<em>xGa1-xAs多量子阱外延结构及其LP-MOCVD生长工艺研究[J]. 光子学报, 2017, 46(3):0325001. HU W, ZENG Q G, YE S R, et al.. Epitaxial structure of multiple quantum well and its LP-MOCVD growth for GaAs/Al<em>xGa1-xAs[J]. Acta Photon. Sinica, 2017, 46(3):0325001. (in Chinese)
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WU T H, SU Y K, CHUANG R W, et al.. 1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE[J]. J. Cryst. Growth, 2013, 370:236-239.
ARKAD M, GRZE S, KRZYSZTOF R, et al.. Oscillator strength of optical transitions in InGaAsN/GaAsN/GaAs quantum wells[J]. Opt. Appl., 2013, 43(1):53-60.
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XU L F, DINESH P, CARMEN S, et al.. Carrier recombination dynamics investigations of strain compensated InGaAsN quantum wells[J]. IEEE Photon. J., 2012, 4(6):2382-2389.
KHALIL M, MAZZUCATO S, ARDALI S, et al.. Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures[J]. Mater. Sci. Eng. B, 2012, 177(10):729-733.
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