高反射率硅基薄膜一维光子晶体的研究制备

陈培专; 于莉媛; 牛萍娟; 张建军; 侯国付

doi:10.3788/fgxb20173810.1403

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高反射率硅基薄膜一维光子晶体的研究制备

发光学应用及交叉前沿 | 更新时间：2020-08-12

- 高反射率硅基薄膜一维光子晶体的研究制备
- Investigation and Preparation of Highly Reflective One Dimensional Photonic Crystal Based on Silicon Thin Films
- 发光学报 2017年38卷第10期页码：1403-1408
- 作者机构：
  
  1. 天津工业大学电气工程与自动化学院, 电工电能天津市重点实验室, 大功率半导体照明应用系统教育部工程中心天津,300387
  2. 南开大学光电子薄膜器件与技术研究所, 光电子薄膜器件与技术天津市重点实验室, 光学信息技术科学教育部重点实验室天津,300071
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61176060，61404074，61504069，61377031，61605145）;天津市自然科学基金（14JCQNJC02100）资助项目
- DOI：10.3788/fgxb20173810.1403
  中图分类号： O472+.3
- 纸质出版日期：2017-10-5，
  
  网络出版日期：2017-7-7，
  
  收稿日期：2017-3-14，
  
  修回日期：2017-4-24，
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陈培专, 于莉媛, 牛萍娟等. 高反射率硅基薄膜一维光子晶体的研究制备[J]. 发光学报, 2017,38(10): 1403-1408

CHEN Pei-zhuan, YU Li-yuan, NIU Ping-juan etc. Investigation and Preparation of Highly Reflective One Dimensional Photonic Crystal Based on Silicon Thin Films[J]. Chinese Journal of Luminescence, 2017,38(10): 1403-1408
陈培专, 于莉媛, 牛萍娟等. 高反射率硅基薄膜一维光子晶体的研究制备[J]. 发光学报, 2017,38(10): 1403-1408 DOI： 10.3788/fgxb20173810.1403.

CHEN Pei-zhuan, YU Li-yuan, NIU Ping-juan etc. Investigation and Preparation of Highly Reflective One Dimensional Photonic Crystal Based on Silicon Thin Films[J]. Chinese Journal of Luminescence, 2017,38(10): 1403-1408 DOI： 10.3788/fgxb20173810.1403.

摘要

采用射频等离子体增强化学气相沉积的方法，研究制备了一种基于硅基薄膜的高反射一维光子晶体。通过交替改变反应气体组分实现低折射率SiO

层和高折射率a-Si层的交替层叠沉积，具有两种膜层介质折射率比大、反射率高、沉积时间短、工艺窗口宽等优点。采用5周期的SiO

层与a-Si层构成的一维光子晶体（厚度分别为155 nm和55 nm），其禁带范围内（650~1100 nm）的平均反射率达到99.1%，高于相同波长范围内Ag的平均反射率（96.3%）。

Abstract

Highly reflective one dimensional photonic crystal (1D PC) based on silicon thin films was investigated and prepared using the radio frequency plasma enhanced chemical vapor deposition method. Both the low refractive index layer of SiO

and high refractive index layer of a-Si were deposited in the same chamber by alternatively changing the reaction gas component. The 1D PC has the advantage of high refractive index contrast

wide band gap

short depostion time and wide process window

which is a good candidate for the replacement of traditional high-reflection metal films. An average reflectivity of 99.1% was obtained within the bandgap (wavelength range of 650-1100 nm) for an 1D PC constructed with only 5 periods of SiO

and a-Si

which is significantly higher than the Ag film of 96.3%.

关键词

一维光子晶体硅基薄膜高反射

Keywords

one dimensional photonic crystalsilicon thin filmshigh reflection

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