Cd掺杂的Cu2ZnSnS4光伏材料的发光光谱及其太阳能电池器件特性

樊彦艳; 索红莉; 冯叶; 周康; 吴迪; 程冠铭; 隋帆; 童君; 罗海林; 李文杰; 钟国华; 杨春雷

doi:10.3788/fgxb20173810.1338

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Cd掺杂的Cu₂ZnSnS₄光伏材料的发光光谱及其太阳能电池器件特性

器件制备及器件物理 | 更新时间：2020-08-12

- Cd掺杂的Cu₂ZnSnS₄光伏材料的发光光谱及其太阳能电池器件特性
- Photoluminescence Properties Cd-doped Cu₂ZnSnS₄ Thin Films and Performance of The Solar Cells
- 发光学报 2017年38卷第10期页码：1338-1345
- 作者机构：
  
  1. 北京工业大学材料科学与工程学院北京,100124
  2. 中国科学院深圳先进技术研究院, 广东深圳 518055
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61574157，51474132，61604166）资助项目
- DOI：10.3788/fgxb20173810.1338
  中图分类号： TB34;O482.31
- 纸质出版日期：2017-10-5，
  
  网络出版日期：2017-7-4，
  
  收稿日期：2017-3-14，
  
  修回日期：2017-4-13，
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樊彦艳, 索红莉, 冯叶等. Cd掺杂的Cu2ZnSnS4光伏材料的发光光谱及其太阳能电池器件特性[J]. 发光学报, 2017,38(10): 1338-1345

FAN Yan-yan, SUO Hong-li, FENG Ye etc. Photoluminescence Properties Cd-doped Cu2ZnSnS4 Thin Films and Performance of The Solar Cells[J]. Chinese Journal of Luminescence, 2017,38(10): 1338-1345
樊彦艳, 索红莉, 冯叶等. Cd掺杂的Cu2ZnSnS4光伏材料的发光光谱及其太阳能电池器件特性[J]. 发光学报, 2017,38(10): 1338-1345 DOI： 10.3788/fgxb20173810.1338.

FAN Yan-yan, SUO Hong-li, FENG Ye etc. Photoluminescence Properties Cd-doped Cu2ZnSnS4 Thin Films and Performance of The Solar Cells[J]. Chinese Journal of Luminescence, 2017,38(10): 1338-1345 DOI： 10.3788/fgxb20173810.1338.

摘要

利用溅射-硫化法制备了一系列不同Cd含量掺杂的铜锌锡硫薄膜材料，并获得了转换效率最高达10.65%的薄膜太阳能电池。利用扫描电子显微镜、变温光致发光谱、变激发密度发光光谱对材料进行了表征，分析了电池器件的电容-电压、电流-电压特性。材料的发光峰峰值显示出反常的温度依赖性，载流子表现出强烈的局域化特征。Cd的适当掺入可以抑制较深缺陷的形成并减小发光峰值和带隙值之间的能量差，从而减小了器件开路电压的损失，有利于器件效率的提升。

Abstract

ZnSnS

thin films with different Cd compositions were prepared using sputtering-sulfuration method. The best device with efficiency as high as 10.65% was achieved. The scanning electron microscope

temperature dependent photoluminescence

excitation power dependent photoluminescence were employed to character the materials and the capacitance-voltage and current-voltage characteristics of the solar cells were studied. It is revealed that the photoluminescence of Cd doped Cu

ZnSnS

is dominated by donor-acceptor pairs

with carriers showing strong localization. Cd incorporation is found to be beneficial in removing deep defects and reduce the energy shift between the emission peak and absorption edge

resulting in the reduction of the open circuit voltage loss of the solar cell device. These findings are helpful to make further improvement in device efficiency.

关键词

铜锌锡硫镉掺杂发光光谱太阳能电池

Keywords

CZTSCd-dopingphotoluminescencesolar cell

references

MITZI D B, GUNAWAN O, TODOROV T K, et al.. The path towards a high-performance solution-processed kesterite solar cell[J]. Solar Energy Mater. Solar Cells, 2011, 95(6):1421-1436.

CHEN S Y, GONG X G, WALSH A, et al.. Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers:first-principles insights[J]. Appl. Phys. Lett., 2009, 94(4):041903.

JACKSON P, WUERZ R, HARISKOS D, et al.. Effects of heavy alkali elements in Cu(In,Ga)Se2 solar cells with efficiencies up to 22.6%[J]. Phys. Stat. Sol. RRL, 2016, 10(8):583-586.

WANG W, WINKLER W W, GUNAWAN O, et al.. Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency[J]. Adv. Energy Mater., 2014, 4(7):1301465.

POLIZZOTTI A, REPINS I L, NOUFI R, et al.. The state and future prospects of kesterite photovoltaics[J]. Energy Environ. Sci., 2013, 6(11):3171-3182.

YIN L, CHENG G M, FENG Y, et al.. Limitation factors for the performance of kesterite Cu2ZnSnS4 thin film solar cells studied by defect characterization[J]. RSC Adv., 2015, 5(50):40369-40374.

CHEN S Y, WALSH A, GONG X G, et al.. Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers[J]. Adv. Mater., 2013, 25(11):1522-1539.

WALSH A, CHEN S Y, WEI S H, et al.. Kesterite thin-film solar cells:advances in materials modelling of Cu2ZnSnS4[J]. Adv. Energy Mater., 2012, 2(4):400-409.

袁振坤, 许鹏, 陈时友. 多元半导体光伏材料中晶格缺陷的计算预测[J]. 物理学报, 2015, 64(18):186102. YUAN Z K, XU P, CHEN S Y. Computational prediction of lattice defects in multinary compound semiconductors as photovoltaic materials[J]. Acta Phys. Sinica, 2015, 64(18):186102. (in Chinese)

ANANTHOJU B, MOHAPATRA J, JANGID M K. Cation/Anion substitution in Cu2ZnSnS4 for improved photovoltaic performance[J]. Sci. Rep., 2016, 6:35369.

XIAO Z Y, LI Y F, YAO B, et al.. Bandgap engineering of Cu2CdxZn1-xSnS4 alloy for photovoltaic applications:a complementary experimental and first-principles study[J]. J. Appl. Phys., 2013, 114(18):183506.

SU Z H, TAN M R, LI X L, et al.. Cation substitution of solution-processed Cu2ZnSnS4 thin film Solar cell with over 9% efficiency[J]. Adv. Energy Mater., 2015, 5(19):1500682.

FENG Y, LAU T K, CHENG G M, et al.. A low-temperature formation path toward highly efficient Se-free Cu2ZnSnS4 solar cells fabricated through sputtering and sulfurization[J]. Crysengcomm., 2016, 18(6):1070-1077.

DIXIT V K, PORWAL S, SINGH S D, et al.. A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures[J]. J. Phys. D:Appl. Phys., 2014, 47(6):065103.

TEO K L, COLTON J S, YUE P Y, et al.. An analysis of temperature dependent photoluminescence line shapes in InGaN[J]. Appl. Phys. Lett., 1998, 73(12):1697-1699.

ISHIKAWA F,GUZMAN A, BRANDT O, et al.. Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells[J]. J. Appl. Phys., 2008, 104(11):113502.

ROMERO M J, DU H, TEETER G, et al.. Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications[J]. Phys. Rev. B, 2011, 84(16):165324.

GRUNDMANN M,DIETRICH C P. Lineshape theory of photoluminescence from semiconductor alloys[J].J. Appl. Phys., 2009, 106(12):123521.

TEIXEIRA J P, SOUSA R A, SOUSA M G, et al.. Comparison of fluctuating potentials and donor-acceptor pair transitions in a Cu-poor Cu2ZnSnS4 based solar cell[J]. Appl. Phys. Lett., 2014, 105(16):163901.

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