GaN基p-i-n和肖特基紫外探测器的响应光谱及暗电流特性

易淋凯; 黄佳琳; 周梅; 李春燕; 赵德刚

doi:10.3788/fgxb20173810.1327

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GaN基p-i-n和肖特基紫外探测器的响应光谱及暗电流特性

器件制备及器件物理 | 更新时间：2020-08-12

- GaN基p-i-n和肖特基紫外探测器的响应光谱及暗电流特性
- Spectral Response and Dark Current of p-i-n Type and Schottky Barrier GaN-based Ultraviolet Detectors
- 发光学报 2017年38卷第10期页码：1327-1331
- 作者机构：
  
  1. 中国农业大学理学院应用物理系北京,100083
  2. 中国科学院半导体研究所集成光电子国家重点实验室北京,100083
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61474142，21403297，11474355）资助项目
- DOI：10.3788/fgxb20173810.1327
  中图分类号： TN304.2
- 纸质出版日期：2017-10-5，
  
  网络出版日期：2017-7-4，
  
  收稿日期：2017-3-14，
  
  修回日期：2017-4-17，
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易淋凯, 黄佳琳, 周梅等. GaN基p-i-n和肖特基紫外探测器的响应光谱及暗电流特性[J]. 发光学报, 2017,38(10): 1327-1331

YI Lin-kai, HUANG Jia-lin, ZHOU Mei etc. Spectral Response and Dark Current of p-i-n Type and Schottky Barrier GaN-based Ultraviolet Detectors[J]. Chinese Journal of Luminescence, 2017,38(10): 1327-1331
易淋凯, 黄佳琳, 周梅等. GaN基p-i-n和肖特基紫外探测器的响应光谱及暗电流特性[J]. 发光学报, 2017,38(10): 1327-1331 DOI： 10.3788/fgxb20173810.1327.

YI Lin-kai, HUANG Jia-lin, ZHOU Mei etc. Spectral Response and Dark Current of p-i-n Type and Schottky Barrier GaN-based Ultraviolet Detectors[J]. Chinese Journal of Luminescence, 2017,38(10): 1327-1331 DOI： 10.3788/fgxb20173810.1327.

摘要

研究了p-i-n型和肖特基型GaN基紫外探测器的响应光谱和暗电流特性。实验发现，随着p-GaN层厚度的增加，p-i-n型紫外探测器的响应度下降，并且在短波处下降更加明显。肖特基探测器的响应度明显比p-i-n结构高，主要是由于p-GaN层吸收了大量的入射光所致。肖特基型紫外探测器的暗电流远远大于p-i-n型紫外探测器的暗电流，和模拟结果基本一致，主要是肖特基型探测器是多子器件，而p-i-n型探测器是少子器件。要制备响应度大、暗电流小的高性能GaN紫外探测器，最好采用p-GaN层较薄的p-i-n结构。

Abstract

The spectral response and dark current of p-i-n type and Schottky barrier GaN-based ultraviolet detectors are investigated. It is found that the responsivity of p-i-n detectors decreases with increasing thickness of p-GaN layer in p-i-n structure detectors

and the downward trend of responsivity is more pronounced at shorter wavelength of incident light. The responsivity of the Schottky barrier detector is obviously higher than that of the p-i-n structure

mainly because a lot of incident photons are absorpted in the p-GaN layer. The dark current of Schottky barrier ultraviolet detectors is far larger than the p-i-n ultraviolet detectors

and the results are basically consistent with the simulations

mainly because the Schottky detectors are majority carrier devices

and p-i-n detectors are minority carrier devices. To fabricate high performance GaN ultraviolet detectors

it is better to employ p-i-n structure with very thin p-GaN layer.

关键词

GaN紫外探测器响应度暗电流

Keywords

GaNultraviolet detectorsresponsivitydark current

references

JIANG L R, LIU J P, TIAN A Q, et al.. GaN-based green laser diodes[J]. J. Semicond., 2016, 37(11):111001-1-10.

SUN Q, YAN W, FENG M X, et al.. GaN-on-Si blue/white LEDs:epitaxy, chip, and package[J]. J. Semicond., 2016, 37(4):044006-1-8.

CARRANO J C, LI T, BROWN D L, et al.. Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN[J]. Appl. Phys. Lett., 1998, 73(17):2405-2407.

KATZ O, GARBER V, MEYLER B, et al.. Anisotropy in detectivity of GaN Schottky ultraviolet detectors:comparing lateral and vertical geometry[J]. Appl. Phys. Lett., 2002, 80(3):347-349.

MCCLINTOCK R, MAYES K, YASAN A, et al.. 320256 solar-blind focal plane arrays based on AlxGa1-xN[J]. Appl. Phys. Lett., 2005, 86(1):011117-1-3.

BUTUN B, TUT T, ULKER E, et al.. High-performance visible-blind GaN-based p-i-n photodetectors[J]. Appl. Phys. Lett., 2008, 92(3):033507-1-3.

JIANG H, AND EGAWA T. Low-dark-current high-performance AlGaN solar-blind p-i-n photodiodes[J]. Jpn. J. Appl. Phys., 2008, 47(3):1541-1543.

CICEK E, VASHAEI Z, MCCLINTOCK R, et al.. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates[J]. Appl. Phys. Lett., 2010, 96(26):261107-1-3.

ZHAO D G, ZHANG S, JIANG D S, et al.. A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector[J]. J. Appl. Phys., 2011, 110(5):053701-1-4.

CICEK E, MCCLINTOCK R, HADDADI A, et al.. High performance solar-blind ultraviolet 320256 focal plane arrays based on AlxGa1-xN[J]. IEEE J. Quant. Elect., 2014, 50(8):591-595.

ALAIE Z, NEJAD S M, YOUSEFI M H. Recent advances in ultraviolet photodetectors[J]. Mat. Sci. Semicond. Proc., 2015, 29:16-55.

LI X J, ZHAO D G, JIANG D S, et al.. Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors[J]. J. Vac. Sci. Technol. B, 2016, 34(1):011204-1-4.

HEINKE H, KIRCHNER V, EINFELDT S, et al.. X-ray diffraction analysis of the defect structure in epitaxial GaN[J]. Appl. Phys. Lett., 2000, 77(14):2145-2147.

SZE S M. Physics of Semiconductor Devices[M]. New York:Wiley, 1981.

周梅, 赵德刚. 结构参数对GaN肖特基紫外探测器性能的影响及器件设计[J]. 发光学报, 2009, 30(6):824-831. ZHOU M, ZHAO D G. Effects of structure parameters on the performances of GaN Schottky barrier ultraviolet photodetectors and device design[J]. Chin. J. Lumin., 2009, 30(6):824-831. (in Chinese)

周梅, 李春燕, 赵德刚. 背照射和正照射p-i-n结构GaN紫外探测器的i-GaN和p-GaN厚度设计[J]. 发光学报, 2015, 36(9):1034-1040. ZHOU M, LI C Y, ZHAO D G. Effects and design of i-GaN and p-GaN layer thickness on the back-illuminated and front-illuminated GaN p-i-n ultraviolet photodetectors[J]. Chin. J. Lumin., 2015, 36(9):1034-1040. (in Chinese)

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