浏览全部资源
扫码关注微信
1. 中国科学院半导体研究所 材料重点实验室 北京,100083
2. 中国科学院大学 材料科学与光电技术学院 北京,100049
纸质出版日期:2017-10-5,
网络出版日期:2017-6-29,
收稿日期:2017-3-2,
修回日期:2017-6-22,
扫 描 看 全 文
袁超, 关敏, 张杨等. 利用变温瞬态电致发光研究OLED载流子的输运机理[J]. 发光学报, 2017,38(10): 1321-1326
YUAN Chao, GUAN Min, ZHANG Yang etc. Study on Carriers Transport Mechanism in OLED by Variable Temperature Transient Electroluminescence[J]. Chinese Journal of Luminescence, 2017,38(10): 1321-1326
袁超, 关敏, 张杨等. 利用变温瞬态电致发光研究OLED载流子的输运机理[J]. 发光学报, 2017,38(10): 1321-1326 DOI: 10.3788/fgxb20173810.1321.
YUAN Chao, GUAN Min, ZHANG Yang etc. Study on Carriers Transport Mechanism in OLED by Variable Temperature Transient Electroluminescence[J]. Chinese Journal of Luminescence, 2017,38(10): 1321-1326 DOI: 10.3788/fgxb20173810.1321.
研究了不同温度下几种结构的有机电致发光器件(OLED)的瞬态电致发光响应特性以及电流密度-电压-亮度特性。研究发现,启亮电压随温度升高而减小的加速度在200 K时出现拐点,且这一数值主要由电子传输层Alq
3
的迁移率决定。当温度为200 K时,延迟时间
t
d
最重要的影响因素是MoO
3
空穴注入势垒,随着温度的升高,
t
d
逐渐减小,到300 K时基本消失。
V
f
代表光衰减时间随温度增长的平均速率。MoO
3
注入层和电致发光材料Ir(ppy)
3
都会对载流子的堆积起促进作用。由MoO
3
注入层不同引起的
V
f
是0.52 s/K,由电致发光材料Ir(ppy)
3
不同引起的
V
f
是0.73 s/K。
The transient electroluminescence response characteristics at different temperatures and the current density-voltage-luminance (
J-V-L
) characteristics of several organic light-emitting devices (OLEDs) were studied. It is found that the acceleration of the turn-on voltage decreasing with the increase of temperature appears the inflection point at 200 K
and this value mainly depends on the mobility of the electron transport layer Alq
3
. When the temperature is 200 K
the most important factors of delay time
t
d
is hole injection barrier MoO
3
. The
t
d
decreases with the increase of temperature and gradually disappears at 300 K.
V
f
represents the average rate of the fall time increasing with the temperature. Both MoO
3
and Ir(ppy)
3
can promote the accumulation of carriers.
V
f
caused by MoO
3
injection layer is 0.52 s/K
and that caused by the electroluminescent material Ir(ppy)
3
is 0.73 s/K.
有机电致发光瞬态电致发光响应载流子输运低温
organic electroluminescencetransient electroluminescence responsecarriers transportlow temperature
TANG C W, VANSLYKE S A. Organic electroluminescent diodes[J]. Appl. Phys. Lett., 1987, 51(12):913-915.
GUAN M, LI L S, CAO G H, et al.. Organic light-emitting diodes with integrated inorganic photo detector for near-infrared optical up-conversion[J]. Org. Electron., 2011, 12(12):2090-2094.
CHU X, MIN G, NIU L, et al.. Fast responsive and highly efficient optical upconverter based on phosphorescent OLED[J]. ACS Appl. Mater. Interf., 2014, 6(21):19011.
王振, 甘林, 汪静静, 等. 新型有机电致磷光白光器件的研究[J]. 发光学报, 2016, 37(6):731-736. WANG Z, GAN L, WANG J J, et al.. Studies on novel white phosphorescent organic light-emitting devices[J]. Chin. J. Lumin., 2016, 37(6):731-736. (in Chinese)
穆晓龄, 曲加伟, 郭永林, 等. 基于载流子平衡的效率及亮度提高的有机蓝光器件[J]. 发光学报, 2015, 36(8):917-922. MU X L, QU J W, GUO Y L, et al.. Blue organic light-emitting device with improved efficiency and luminance based on carriers balance[J]. Chin. J. Lumin., 2015, 36(8):917-922. (in Chinese)
HASSINE L, BOUCHRIHA H, ROUSSEL J, et al.. Transient response of a bilayer organic electroluminescent diode:experimental and theoretical study of electroluminescence onset[J]. Appl. Phys. Lett., 2001, 78(8):1053-1055.
XIE Z, WONG T, HUNG L S, et al.. Transient electroluminescence of organic quantum-well light-emitting diodes[J]. Appl. Phys. Lett., 2002, 80(8):1477-1479.
KAJⅡ H, TAKAHASHI K, KIM J S, et al.. Study of transient electroluminescence process using organic light-emitting diode with partial doping layer[J]. Jpn. J. Appl. Phys., 2006, 45:3721-3724.
SHUKLA M, KUMAR P, CHAND S, et al.. Kinetics of transient electroluminescence in organic light emitting diodes[J]. J. Phys. D:Appl. Phys., 2008, 41(41):2444-2454.
NIU L, GUAN M, CHU X, et al.. Overshoot effect and inflexion characteristics in transient electroluminescence of hybrid phosphorescent OLEDs[J]. J. Phys. D:Appl. Phys., 2015, 48(5):55103-1-6.
牛立涛, 关敏, 楚新波, 等. 有机电致发光器件的瞬态电响应特性[J]. 发光学报, 2015, 36(6):699-704. NIU L T, GUAN M, CHU X B, et al.. Transient current response characteristics of organic light-emitting diodes[J]. Chin. J. Lumin., 2015, 36(6):699-704. (in Chinese)
ANJOS P N M D, AZIZ H, HU N X, et al.. Temperature dependence of electroluminescence degradation in organic light emitting devices without and with a copper phthalocyanine buffer layer[J]. Org. Electron., 2002, 3(1):9-13.
TANAKA I, TOKITO S. Temperature-dependent carrier-transport and light-emission processes in a phosphorescent organic light-emitting device[J]. Appl. Phys. Lett., 2005, 87(17):173509-1-3.
PARK J, KAWAKAMI Y. Temperature-dependent dynamic behaviors of organic light-emitting diode[J]. J. Disp. Technol., 2006, 2(4):333-340.
MU H, KLOTZKIN D, DE SILVA A, et al.. Temperature dependence of electron mobility, electroluminescence and photoluminescence of Alq3 in OLED[J]. J. Phys. D:Appl. Phys., 2008, 41(41):3850-3856.
PAI D M. Transient photoconductivity in poly (N-vinylcarbazole)[J]. J. Chem. Phys., 1970, 52(5):2285-2291.
WEICHSEL C, BURTONE L, REINEKE S, et al.. Storage of charge carriers on emitter molecules in organic light-emitting diodes[J]. Phys. Rev. B:Condens. Matter, 2012, 86(7):3305-3307.
0
浏览量
71
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构