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合肥工业大学 光电技术研究院, 特种显示技术国家工程实验室, 省部共建现代显示技术国家重点实验室(培育基地), 特种显示技术教育部重点实验室,安徽 合肥,230009
纸质出版日期:2017-10-5,
网络出版日期:2017-6-29,
收稿日期:2017-2-28,
修回日期:2017-4-18,
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王向华, 顾勋, 张春雨等. 非对称结构诱导取向生长的有机半导体薄膜[J]. 发光学报, 2017,38(10): 1314-1320
WANG Xiang-hua, GU Xun, ZHANG Chun-yu etc. Directional Growth of Organic Semiconductor Film on Asymmetric Structures[J]. Chinese Journal of Luminescence, 2017,38(10): 1314-1320
王向华, 顾勋, 张春雨等. 非对称结构诱导取向生长的有机半导体薄膜[J]. 发光学报, 2017,38(10): 1314-1320 DOI: 10.3788/fgxb20173810.1314.
WANG Xiang-hua, GU Xun, ZHANG Chun-yu etc. Directional Growth of Organic Semiconductor Film on Asymmetric Structures[J]. Chinese Journal of Luminescence, 2017,38(10): 1314-1320 DOI: 10.3788/fgxb20173810.1314.
采用非对称立体结构,利用其表面在微米尺度范围上存在的表面曲率变化及其各向异性的梯度特征,作用于喷墨打印在结构上方的TIPS-并五苯前驱体溶液表面,形成不对称的液体表面张力分布,从而驱动有机半导体发生取向生长。基于这种非对称立体结构制备了有机薄膜晶体管(OTFT)阵列,其平均迁移率提升了近40%,同时迁移率的变异系数由68%减小到39%。
Asymmetric structures were designed and fabricated featured with differential surface curvature across the microscale profiles and the characteristic anisotropic gradient. TIPS-pentacene was deposited over the profile
via
a solution precursor and directional crystallization is achieved owing to the asymmetric surface energy distribution across the surface of the liquid. With the semiconductor layer printed
via
this method
the average mobility of an arrayed organic thin-film transistors (OTFTs) was increased by 40% while the coefficient of variation (CV) was reduced from 68% to 39%.
有机薄膜晶体管非对称立体结构喷墨打印取向结晶生长
OTFTasymmetric structureinkjet printingdirectional crystallization
熊贤风, 淼元, 林广庆, 等. 基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征[J]. 发光学报, 2014, 35(1):105-112. XIONG X F, YUAN M, LIN G Q, et al.. Preparation and characterrization of inkjet-printed small-molecule organic semiconductor thin film based on a surface modification layer of poly(4-vinylphenol)[J]. Chin. J. Lumin., 2014, 35(1):105-112. (in Chinese)
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SHUKLA D, NELSON S F, FREEMAN D C, et al.. Thin-film morphology control in naphthalene-diimide-based semiconductors:high mobility n-type semiconductor for organic thin-film transistors[J]. Chem. Mater., 2016, 20(24):7486-7491.
KANG B, MOON B, CHOI H H, et al.. Molecular orientation-dependent bias stress stability in bottom-gate organic transistors based on ann-type semiconducting polymer[J]. Adv. Electron. Mater., 2016, 2(3):1500380.
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FENG L, ANGUITA J V, TANG W, et al.. Room temperature grown high-quality polymer-like carbon gate dielectric for organic thin-film transistors[J]. Adv. Electron. Mater., 2016, 2(3):1500374.
KIM D H, LIM J A, CHA W, et al.. Directed self-assembly of organic semiconductors via confined evaporative capillary flows for use in organic field-effect transistors[J]. Org. Electron., 2014, 15(10):2322-2327.
LIM J A, LEE W H, LEE H S, et al.. Self-organization of ink-jet-printed triisopropylsilylethynyl pentacene via evaporation-induced flows in a drying droplet[J]. Adv. Funct. Mater., 2008, 18:229-234.
DERBY B. Inkjet printing of functional and structural materials:fluid property requirements, feature stability, and resolution[J]. Ann. Rev. Mater. Res., 2010, 40(1):395-414.
WANG X, YUAN M, LV S, et al.. Interfacial nucleation behavior of inkjet-printed 6,13 bis(tri-isopropylsilylethynyl) pentacene on dielectric surfaces[J]. J. Appl. Phys., 2015, 117(2):024902-1-5.
CHEN J, TEE C K, SHTEIN, et al.. Grain-boundary-limited charge transport in solution-processed 6,13 bis(tri-isopropylsilylethynyl) pentacene thin film transistors[J]. J. Appl. Phys., 2008, 103(11):114513-1-12.
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