化学气相沉积法制备&beta;-Ga2O3 纳米结构及其缺陷发光性质研究

薛金玲; 马剑钢

doi:10.3788/fgxb20173810.1273

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化学气相沉积法制备β-Ga₂O₃ 纳米结构及其缺陷发光性质研究

材料合成及性能 | 更新时间：2020-08-12

- 化学气相沉积法制备β-Ga₂O₃ 纳米结构及其缺陷发光性质研究
- Defects Luminescence Behavior of β-Ga₂O₃ Nanostructures Synthesized by Chemical Vapor Deposition
- 发光学报 2017年38卷第10期页码：1273-1279
- 作者机构：
  
  东北师范大学紫外光发射材料与技术教育部重点实验室,吉林长春,130024
- 作者简介：
- 基金信息：
  
  国家自然科学基金（91233204，51202026，91233204，51372035，51422201）;吉林省科技发展计划（20140309012GX，20140201008GX）;教育部高等学校博士学科点基金（20110043120004，20120043110002，20130043110004）资助项目
- DOI：10.3788/fgxb20173810.1273
  中图分类号： O482.31
- 纸质出版日期：2017-10-5，
  
  网络出版日期：2017-7-13，
  
  收稿日期：2017-3-20，
  
  修回日期：2017-4-12，
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薛金玲, 马剑钢,. 化学气相沉积法制备β-Ga2O3 纳米结构及其缺陷发光性质研究[J]. 发光学报, 2017,38(10): 1273-1279

XUE Jin-ling, MA Jian-gang,. Defects Luminescence Behavior of β-Ga2O3 Nanostructures Synthesized by Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2017,38(10): 1273-1279
薛金玲, 马剑钢,. 化学气相沉积法制备β-Ga2O3 纳米结构及其缺陷发光性质研究[J]. 发光学报, 2017,38(10): 1273-1279 DOI： 10.3788/fgxb20173810.1273.

XUE Jin-ling, MA Jian-gang,. Defects Luminescence Behavior of β-Ga2O3 Nanostructures Synthesized by Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2017,38(10): 1273-1279 DOI： 10.3788/fgxb20173810.1273.

摘要

利用化学气相沉积法（CVD），在不同压强下分别得到-Ga

纳米线（NWs）和纳米带（NBs）。研究结果表明，获得的NWs与NBs均为单斜结构的-Ga

，且NWs结晶质量优于NBs。在阴极射线发光（CL）光谱中，发现NWs与NBs在近紫外和蓝光波段有较强的发光。对比NWs与NBs的CL光谱，推断-Ga

在374 nm和459 nm的近紫外和蓝色发光峰分别来自于Ⅰ型和Ⅱ型氧空位（V

O（I）

和V

O（Ⅱ）

）的缺陷复合。

Abstract

-Ga

nanowires (NWs) and nanoribbons (NBs) were synthesized under different gas flow rates

via

chemical vapor deposition (CVD) method. The results show that the NWs and NBs are monoclinic structure. NWs has higher crystal quality than NBs. The cathode luminescence (CL) spectra show that the NWs and NBs have strong UV-blue emission band. By comparing the CL spectra of the NWs and NBs

it is found that the UV and blue luminescence of -Ga

NWs and NBs located at 374 and 459 nm

mainly due to radiative recombination emission of oxygen vacancies (V

O(Ⅰ)

and V

O(Ⅱ)

关键词

化学气相沉积&beta-Ga2O3阴极射线发光氧空位

Keywords

chemical vapor deposition method&beta-Ga2O3cathode luminescence(CL)oxygen vacancies

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化学气相沉积法制备β-Ga2O3 纳米结构及其缺陷发光性质研究

Defects Luminescence Behavior of β-Ga2O3 Nanostructures Synthesized by Chemical Vapor Deposition

DOI：10.3788/fgxb20173810.1273

摘要

Abstract

关键词

Keywords

references

化学气相沉积法制备β-Ga₂O₃ 纳米结构及其缺陷发光性质研究

Defects Luminescence Behavior of β-Ga₂O₃ Nanostructures Synthesized by Chemical Vapor Deposition