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天津三安光电有限公司 天津,300387
纸质出版日期:2017-9-5,
网络出版日期:2017-6-22,
收稿日期:2017-2-17,
修回日期:2017-4-30,
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王笃祥, 李明阳, 毕京锋等. 轻质柔性GaInP/Ga(In)As/Ge三结太阳电池及其性能研究[J]. 发光学报, 2017,38(9): 1217-1221
WANG Du-xiang, LI Ming-yang, BI Jing-feng etc. Low-weight Flexible GaInP/Ga(In)As/Ge Triple-junction Solar Cell and Its Performance[J]. Chinese Journal of Luminescence, 2017,38(9): 1217-1221
王笃祥, 李明阳, 毕京锋等. 轻质柔性GaInP/Ga(In)As/Ge三结太阳电池及其性能研究[J]. 发光学报, 2017,38(9): 1217-1221 DOI: 10.3788/fgxb20173809.1217.
WANG Du-xiang, LI Ming-yang, BI Jing-feng etc. Low-weight Flexible GaInP/Ga(In)As/Ge Triple-junction Solar Cell and Its Performance[J]. Chinese Journal of Luminescence, 2017,38(9): 1217-1221 DOI: 10.3788/fgxb20173809.1217.
为了研究柔性太阳能电池的性能,通过太阳能电池减薄工艺制备出轻质柔性GaInP/Ga(In)As/Ge三结太阳能电池芯片。尺寸为40 mm60 mm的电池芯片重量为0.7 g,仅为常规175 m厚度电池重量的30%。验证了柔性电池工艺的可行性,制得的柔性电池转换效率达到了30.64%,同常规厚度电池十分接近。对比测试了两种样品不同温度下的暗电流曲线,拟合了两种电池样品的温度系数,结果表明:电池的温度系数与衬底类型无关,只与电池PN结本身相关。
In order to study the performance of flexible solar cells
low-weight flexible GaInP/Ga(In)As/Ge triple-junction solar cell was fabricated by thinning process. The weight of the 40 mm60 mm solar cell chip is 0.7 g
which is only 30% of the conventional solar cell with the thickness of 175 m. The conversion efficiency of this kind of solar cell is 30.64%
closing to that of the normal thickness chips. The results show the feasibility of this thinning process. For both samples with different chips thickness
under different temperature
the dark I-
V
curves were measured and the temperature coefficients were fitted. It can be concluded that the temperature coefficient is linearly correlated to the PN junction rather than the substrate type.
空间太阳电池柔性太阳电池温度系数
space solar cellflexible solar celltemperature coefficient
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吕菲, 赵权, 刘春香, 等. Ge单晶片的酸性腐蚀特性分析[J]. 半导体技术, 2008, 33(12):1077-1079. LV F, ZHAO Q, LIU C X, et al.. Analysis of acid etching on Ge wafers[J]. Semicond. Technol., 2008, 33(12):1077-1079. (in Chinese)
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