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1. 上海大学 材料科学与工程学院 上海,200444
2. 上海大学 新型显示技术及应用集成教育部重点实验室 上海,200072
3. 上海天马微电子有限公司 上海,201201
纸质出版日期:2017-9-5,
网络出版日期:2017-5-26,
收稿日期:2017-1-24,
修回日期:2017-3-19,
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岳致富, 吴勇, 李喜峰等. 柔性低温多晶硅薄膜晶体管的弯曲稳定性[J]. 发光学报, 2017,38(9): 1205-1209
YUE Zhi-fu, WU Yong, LI Xi-feng etc. Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors[J]. Chinese Journal of Luminescence, 2017,38(9): 1205-1209
岳致富, 吴勇, 李喜峰等. 柔性低温多晶硅薄膜晶体管的弯曲稳定性[J]. 发光学报, 2017,38(9): 1205-1209 DOI: 10.3788/fgxb20173809.1205.
YUE Zhi-fu, WU Yong, LI Xi-feng etc. Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors[J]. Chinese Journal of Luminescence, 2017,38(9): 1205-1209 DOI: 10.3788/fgxb20173809.1205.
研究了以聚酰亚胺为基板的p型低温多晶硅薄膜晶体管在不同弯曲半径下的偏压稳定性。当曲率半径从15 mm变到3 mm时,在拉伸弯曲状态下,阈值电压和平坦时保持一致(
V
th
=-1.34 V),迁移率
sat
从45.65 cm
2
/(Vs)降到45.17 cm
2
/(Vs),开关比增大;在压缩弯曲状态下,转移特性曲线和平坦状态保持了非常好的一致性。在最小弯曲半径为3 mm时,进行了正负偏压稳定性测试,结果表明,器件依然具有很好的稳定性。
The bias stability of the flexible thin-film transistors under various bending radii was investigated. The thin-film transistors with p-type low temperature poly-silicon channel layers were fabricated on polyimide substrate. The changing region of the bending radius was from 15 mm to 3 mm. For the stretch bending
the threshold voltage kept the same with the flat(
V
th
=-1.34 V)
the mobility reduced from 45.65 cm
2
/(Vs) to 45.17 cm
2
/(Vs)
and I
on
/I
off
increased. For the compress bending
the transfer curve well kept the same with the flat. When the minimum bending radius was 3 mm
the device was tested under the positive and negative bias stress
and showed good stability. The experiment results indicate that the flexible LTPS-TFTs have fine performance and stability.
柔性低温多晶硅薄膜晶体管低温多晶硅弯曲稳定性
flexiblethin-film transistorsLTPS-TFTbendingstability
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