nc-Ge/SiNx多层膜的光致发光特性

李悰; 许彦鑫; 何宏平

doi:10.3788/fgxb20173809.1173

您当前的位置：

首页 >

文章列表页 >

nc-Ge/SiN_x多层膜的光致发光特性

材料合成及性能 | 更新时间：2020-08-12

- nc-Ge/SiN_x多层膜的光致发光特性
- Photoluminescence of Nanocrystalline-Ge/SiN_x Multilayers
- 发光学报 2017年38卷第9期页码：1173-1178
- 作者机构：
  
  1. 中国电子科技集团公司第三十八研究所,安徽合肥,230088
  2. 固体微结构国家重点实验室,江苏南京,230091
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20173809.1173
  中图分类号： O433;O472+.3
- 纸质出版日期：2017-9-5，
  
  网络出版日期：2017-6-22，
  
  收稿日期：2017-2-22，
  
  修回日期：2017-4-21，
扫描看全文
李悰, 许彦鑫, 何宏平. nc-Ge/SiNx多层膜的光致发光特性[J]. 发光学报, 2017,38(9): 1173-1178

LI Cong, XU Yan-xin, HE Hong-ping. Photoluminescence of Nanocrystalline-Ge/SiNx Multilayers[J]. Chinese Journal of Luminescence, 2017,38(9): 1173-1178
李悰, 许彦鑫, 何宏平. nc-Ge/SiNx多层膜的光致发光特性[J]. 发光学报, 2017,38(9): 1173-1178 DOI： 10.3788/fgxb20173809.1173.

LI Cong, XU Yan-xin, HE Hong-ping. Photoluminescence of Nanocrystalline-Ge/SiNx Multilayers[J]. Chinese Journal of Luminescence, 2017,38(9): 1173-1178 DOI： 10.3788/fgxb20173809.1173.

摘要

通过将a-Ge：H/a-SiN

多层膜进行氧化，制备了nc-Ge/SiN

多层膜。观察到了室温下的强烈可见光发射，发光波长为500 nm。通过分析，排除了与量子限制效应有关的光发射机制，也排除了与Si和N相关的缺陷产生的复合机制，认为该发光源于氧化后的a-SiN

介质层中带尾态之间的辐射复合，最有效的激发能量约为介质层的带隙。

Abstract

Nanocrystalline-Ge (nc-Ge)/amorphous-SiN

(a-SiN

) multilayers (MLs) were fabricated by oxidizing hydrogenated amorphous-Ge(a-Ge:H)/a-SiN

multilayers. Its strong photoluminescence (PL)

peak at 500 nm

was observed at room temperature. Then

the mechanism of PL was studied

which indicated that the light emission was irrelevant to quantum confinement effect. The recombination of defects related to Si or N was also excluded. It is believed the PL of nc-Ge/SiN

MLs is originated from the radiative recombination of tail states of oxidized a-SiN

matrix

and the most effective excitation energy is close to the optical band gap of matrix.

关键词

纳米锗光致发光辐射复合

Keywords

nanocrystalline-Gephotoluminescenceradiative recombination

references

REN S Y. Quantum confinement of edge states in Si crystallites[J]. Phys. Rev. B, 1997, 55(7):4665-4669.

TRWOGA P F, KENYON A J, PITT C W. Modeling the contribution of quantum confinement to luminescence from silicon nanoclusters[J]. J. Appl. Phys., 1998, 83(7):3789-3794.

SINGHA R K, MANNA S, DAS S, et al.. Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy[J]. Appl. Phys. Lett., 2010, 96(23):233113-1-3.

CAI Q J, ZHOU H, LU F. Enhanced infrared response of Si base p-n diode with self-assembled Ge quantum dots by thermal annealing[J]. Appl. Surf. Sci., 2008, 254(1):3376-3379.

KAN E W H, CHIM W K, LEE C H, et al.. Clarifying the origin of near-infrared electroluminescence peaksfor nanocrystalline germanium in metal-insulator-silicon structures[J]. Appl. Phys. Lett., 2004, 85(12):2349-2351.

CHIEN C Y, CHANG Y J, CHANG J E, et al.. Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics[J]. Nanotechnology, 2010, 21(50):505201-1-8.

RAY S K, DAS K. Luminescence characteristics of Ge nanocrystals embedded in SiO2matrix[J]. Opt. Mater., 2005, 27(5):948-952.

DAS S, SINGHA R K, GANGOPADHYAY S, et al.. Microstructural characteristics and phonon structures in luminescence from surface oxidized Ge nanocrystals embedded in HfO2 matrix[J]. J. Appl. Phys., 2010, 108(5):053510-1-7.

李悰, 徐骏, 林涛, 等. 超薄氢化非晶锗膜的结构与光电性质[J]. 发光学报, 2011, 32(11):1165-1170. LI C, XU J, LIN T, et al.. Structural, electronic and optical properties of ultra-thin hydrogenated amorphous germanium films[J]. Chin. J. Lumin., 2011, 32(11):1165-1170. (in Chinese)

LI C, XU J, LI W, et al.. Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature[J]. J. Vac. Sci. Technol. B, 2012, 30(5):051201.

LI C, XU J, XU L, et al.. Optical absorption and charging effect in nano-crystalline Ge/SiNx multilayers[J]. Appl. Surf. Sci., 2013, 269:129-133.

LI C, XU J, LI W, et al.. Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiNx multilayers[J]. Chin. Phys. B, 2013, 22(10):107201-1-7.

KISTNER J, CHEN X, WENG Y, et al.. Photoluminescence from silicon nitride-no quantum effect[J]. J. Appl. Phys., 2011, 110(2):023520-1-5.

BOMMALI R K, SINGH S P, RAI S, et al.. Excitation dependent photoluminescence study of Si-rich a-SiNx:H thin films[J]. J. Appl. Phys., 2012, 112(12):123518.

BARBAGIOVANNI E G, LOCKWOOD D J, SIMPSON P J, et al.. Quantum confinement in Si and Ge nanostructures[J]. J. Appl. Phys., 2012, 111(3):034307-1-9.

MAEDA Y, TSUKAMOTO N, YAZAWA Y, et al.. Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices[J]. Appl. Phys. Lett., 1991, 59(9):3168-3170.

FUJⅡ M, MAMEZAKI O, HAYASHI S, et al.. Current transport properties of SiO2 films containing Ge nanocrystals[J]. J. Appl. Phys., 1998, 83(3):1507-1512.

ROBERTSON J, POWELL M J. Gap states in silicon nitride[J]. Appl. Phys. Lett., 1984, 44(4):415-417.

BOULITROP F, DUNSTAN D J. Phonon interactions in the tail states of a-Si:H[J]. Phys. Rev. B, 1983, 28(10):5923-5929.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

深紫外AlGaN基多量子阱结构中载流子辐射复合的局域特征

Sr₆Lu₂Al₄O₁₅∶Tb³⁺荧光粉的发光特性

一维光子晶体带边态模式调控的胶体量子点发光性能

颜色可调CsLa（WO₄）₂∶Pr³⁺荧光粉的光致发光和温度传感特性

Cd²⁺掺杂Cs₂ZnCl₄黄光荧光粉及其光学性能