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1. 中国电子科技集团公司第三十八研究所,安徽 合肥,230088
2. 固体微结构国家重点实验室,江苏 南京,230091
纸质出版日期:2017-9-5,
网络出版日期:2017-6-22,
收稿日期:2017-2-22,
修回日期:2017-4-21,
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李悰, 许彦鑫, 何宏平. nc-Ge/SiN<sub><em>x</em></sub>多层膜的光致发光特性[J]. 发光学报, 2017,38(9): 1173-1178
LI Cong, XU Yan-xin, HE Hong-ping. Photoluminescence of Nanocrystalline-Ge/SiN<sub><em>x</em></sub> Multilayers[J]. Chinese Journal of Luminescence, 2017,38(9): 1173-1178
李悰, 许彦鑫, 何宏平. nc-Ge/SiN<sub><em>x</em></sub>多层膜的光致发光特性[J]. 发光学报, 2017,38(9): 1173-1178 DOI: 10.3788/fgxb20173809.1173.
LI Cong, XU Yan-xin, HE Hong-ping. Photoluminescence of Nanocrystalline-Ge/SiN<sub><em>x</em></sub> Multilayers[J]. Chinese Journal of Luminescence, 2017,38(9): 1173-1178 DOI: 10.3788/fgxb20173809.1173.
通过将a-Ge:H/a-SiN
x
多层膜进行氧化,制备了nc-Ge/SiN
x
多层膜。观察到了室温下的强烈可见光发射,发光波长为500 nm。通过分析,排除了与量子限制效应有关的光发射机制,也排除了与Si和N相关的缺陷产生的复合机制,认为该发光源于氧化后的a-SiN
x
介质层中带尾态之间的辐射复合,最有效的激发能量约为介质层的带隙。
Nanocrystalline-Ge (nc-Ge)/amorphous-SiN
x
(a-SiN
x
) multilayers (MLs) were fabricated by oxidizing hydrogenated amorphous-Ge(a-Ge:H)/a-SiN
x
multilayers. Its strong photoluminescence (PL)
peak at 500 nm
was observed at room temperature. Then
the mechanism of PL was studied
which indicated that the light emission was irrelevant to quantum confinement effect. The recombination of defects related to Si or N was also excluded. It is believed the PL of nc-Ge/SiN
x
MLs is originated from the radiative recombination of tail states of oxidized a-SiN
x
matrix
and the most effective excitation energy is close to the optical band gap of matrix.
纳米锗光致发光辐射复合
nanocrystalline-Gephotoluminescenceradiative recombination
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