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1. 太原理工大学 物理与光电工程学院,山西 太原,030024
2. 韩山师范学院 材料科学与工程学院,广东 潮州,521041
纸质出版日期:2017-9-5,
网络出版日期:2017-6-6,
收稿日期:2017-1-26,
修回日期:2017-3-11,
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王怀佩, 林圳旭, 宋捷等. 非晶SiC<sub><em>x</em></sub>O<sub><em>y</em></sub>薄膜的可调强光发射机制[J]. 发光学报, 2017,38(9): 1167-1172
WANG Huai-pei, LIN Zhen-xu, SONG Jie etc. Strong Tunable Light Emission from Amorphous Silicon Oxycarbide Film[J]. Chinese Journal of Luminescence, 2017,38(9): 1167-1172
王怀佩, 林圳旭, 宋捷等. 非晶SiC<sub><em>x</em></sub>O<sub><em>y</em></sub>薄膜的可调强光发射机制[J]. 发光学报, 2017,38(9): 1167-1172 DOI: 10.3788/fgxb20173809.1167.
WANG Huai-pei, LIN Zhen-xu, SONG Jie etc. Strong Tunable Light Emission from Amorphous Silicon Oxycarbide Film[J]. Chinese Journal of Luminescence, 2017,38(9): 1167-1172 DOI: 10.3788/fgxb20173809.1167.
采用甚高频等离子体增强化学气相沉积技术,以SiH
4
、CH
4
和O
2
作为反应气源,通过调控O
2
流量在250℃下制备强光发射的非晶SiC
x
O
y
薄膜。利用光致发光光谱、荧光瞬态谱、Raman光谱、X射线光电子能谱及红外吸收谱对薄膜的光学性质和微结构进行表征与分析,进而讨论其可调可见光发射机制。实验结果表明,SiC
x
O
y
薄膜发光性质与薄膜中的氧组分密切相关。随着薄膜中氧组分的增加,其发光峰位由橙红光逐渐向蓝光移动,肉眼可见强的可见光发射。荧光瞬态谱分析表明,薄膜的荧光寿命在纳秒范围。结合X射线光电子能谱和红外吸收谱对薄膜的相结构和化学键合结构进行分析,结果表明薄膜的主要相结构和发光中心随O
2
流量的变化是其可调光发射的主要原因。
The strong luminescent amorphous silicon oxycarbide (a-SiC
x
O
y
) films with different O content were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at 250℃ by using the gas mixture of SiH
4
CH
4
and O
2
as the precursor. The effect of O content on the luminescent properties and structure of SiC
x
O
y
thin films was investigated. It is found that the increase of O content results in remarkable photoluminescence (PL) with orange-red to blue shifting emission
which can be clearly observed with the naked eyes in a bright room. The PL of the a-SiC
x
O
y
film is suggested from the nanoseconds recombination lifetime. The microstructure and the chemical compositions of the films were further investigated by Raman spectra
X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared absorption (FTIR) spectroscopy
respectively. Combining with the PL results and the analysis of the chemical bonds and microstructure present in the films
the main phase structure of the films and the change of the luminescent center with the O
2
flow rate are the main reasons for the tunable light emission.
光致发光碳氧化硅等离子增强化学气相沉积发光机制
photoluminescencesilicon oxycarbideplasma enhance chemical vapor depositionphotoluminescence mechanism
CHEN K J, HUANG X F, XU J, et al.. Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures[J]. Appl. Phys. Lett., 1992, 61(17):2069-2071.
PAVESI L, DAL NEGRO L, MAZZOLENI C, et al.. Optical gain in silicon nanocrystals[J]. Nature, 2000, 408(6811):440-444.
HUANG R, SONG J, WANG X, et al.. Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride[J]. Opt. Lett., 2012, 37(4):692-694.
黄锐, 王旦清, 宋捷, 等. 基于Si-rich SiNx/N-rich SiNy多层膜结构的量子点构筑及发光特性[J]. 物理学报, 2010, 59(8):5823-5827. HUANG R, WANG D Q, SONG J, et al.. Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer[J]. Acta Phys. Sinica, 2010, 59(8):5823-5827. (in Chinese)
HUANG R, LIN Z W, LIN Z X, et al.. Suppression of hole overflow and enhancement of light emission efficiency in Si quantum dots based silicon nitride light emitting diodes[J]. IEEE J. Sel. Top. Quant. Electron., 2014, 20(4):8200306-1-6.
林圳旭, 林泽文, 张毅, 等. 基于纳米硅结构的氮化硅基发光器件电致发光特性研究[J]. 物理学报, 2014, 63(3):37801-1-4. LIN Z X, LIN Z W, ZHANG Y, et al.. Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices[J]. Acta Phys. Sinica, 2014, 63(3):37801-1-4. (in Chinese)
WANG F, LI D S, YANG D R, et al.. Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride[J]. IEEE J. Sel. Top. Quant. Electron., 2013, 19(3):4602504-1-4.
MU W W, ZHANG P, XU J, et al.. Direct-current and alternating-current driving Si quantum dots-based light emitting device[J]. IEEE J. Sel. Top. Quant. Electron., 2014, 20(4):8200106-1-6.
LIU C, LI C R, JI A L, et al.. Exploring extreme particle density and size for blue photoluminescence from as-deposited amorphous Si-in-SiNx films[J]. Appl. Phys. Lett., 2005, 86(22):223111-1-3.
DING Y, SHIRAI H. White light emission from silicon oxycarbide films prepared by using atmospheric pressure microplasma jet[J]. J. Appl. Phys., 2009, 105(4):043515-1-4.
DING Y, SHIRAI H, HE D Y. White light emission and electrical properties of silicon oxycarbide-based metal-oxide-semiconductor diode[J]. Thin Solid Films, 2011, 519(8):2513-2515.
BONINELLI S, BELLOCCHI G, FRANZ G, et al.. New strategies to improve the luminescence efficiency of Eu ions embedded in Si-based matrices[J]. J. Appl. Phys., 2013, 113(14):143503-1-8.
LIN Z X, GUO Y Q, SONG J, et al.. Effect of thermal annealing on the blue luminescence of amorphous silicon oxycarbide films[J]. J. Non-Cryst. Solids, 2015, 428:184-188.
HUANG R, LIN Z W, GUO Y Q, et al.. Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics[J]. Opt. Mater. Express, 2014, 4(2):205-212.
LIN G R, LIN C J, YU K C. Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate[J]. J. Appl. Phys., 2004, 96(5):3025-3027.
SONG D Y, CHO E C, CHO Y H, et al.. Evolution of Si (and SiC) nanocrystal precipitation in SiC matrix[J]. Thin Solid Films, 2008, 516(12):3824-3830.
ZHANG H T, XU Z Y. Structural and optical properties of four-hexagonal polytype nanocrystalline silicon carbide films deposited by plasma enhanced chemical vapor deposition technique[J]. Thin Solid Films, 2004, 446(1):99-105.
BASA D K, AMBROSONE G, COSCIA U, et al.. Crystallization of hydrogenated amorphous silicon carbon films with laser and thermal annealing[J]. Appl. Surf. Sci., 2009, 255(10):5528-5531.
GRILL A. Plasma enhanced chemical vapor deposited SiCOH dielectrics:from low-k to extreme low-k interconnect materials[J]. J. Appl. Phys., 2003, 93(3):1785-1790.
MA T F, XU J, DU J F, et al.. Full color light emission from amorphous SiCx:H with organic-inorganic structures[J]. J. Appl. Phys., 2000, 88(11):6408-6412.
CHEN Z, WANG Y X, ZOU Y M, et al.. Origin of the blue photoluminescence from SiO2 (SiC)/SiC on Si substrate[J]. Appl. Phys. Lett., 2006, 89(14):141913-1-3.
LIN Z X, GUO Y Q, SONG C, et al.. Influence of the oxygen content in obtaining tunable and strong photoluminescence from low-temperature grown silicon oxycarbide films[J]. J. Alloys Compd., 2015, 633:153-156.
LIN G R, LIN C J. Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate[J]. J. Appl. Phys., 2004, 95(12):8484-8486.
KABASHIN A V, SYLVESTRE J P, PATSKOVSKY S, et al.. Correlation between photoluminescence properties and morphology of laser-ablated Si/SiOx nanostructured films[J]. J. Appl. Phys., 2002, 91(5):3248-3254.
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