非晶SiCxOy薄膜的可调强光发射机制

王怀佩; 林圳旭; 宋捷; 张文星; 王岩; 郭艳青; 李洪亮; 宋超; 黄锐

doi:10.3788/fgxb20173809.1167

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非晶SiC_xO_y薄膜的可调强光发射机制

材料合成及性能 | 更新时间：2020-08-12

- 非晶SiC_xO_y薄膜的可调强光发射机制
- Strong Tunable Light Emission from Amorphous Silicon Oxycarbide Film
- 发光学报 2017年38卷第9期页码：1167-1172
- 作者机构：
  
  1. 太原理工大学物理与光电工程学院,山西太原,030024
  2. 韩山师范学院材料科学与工程学院,广东潮州,521041
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61274140，61306003）();广东省自然科学基金（2015A030313871）();广东高校优秀青年创新人才培养计划项目（YQ20151
- DOI：10.3788/fgxb20173809.1167
  中图分类号： O469;O482.31
- 纸质出版日期：2017-9-5，
  
  网络出版日期：2017-6-6，
  
  收稿日期：2017-1-26，
  
  修回日期：2017-3-11，
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王怀佩, 林圳旭, 宋捷等. 非晶SiCxOy薄膜的可调强光发射机制[J]. 发光学报, 2017,38(9): 1167-1172

WANG Huai-pei, LIN Zhen-xu, SONG Jie etc. Strong Tunable Light Emission from Amorphous Silicon Oxycarbide Film[J]. Chinese Journal of Luminescence, 2017,38(9): 1167-1172
王怀佩, 林圳旭, 宋捷等. 非晶SiCxOy薄膜的可调强光发射机制[J]. 发光学报, 2017,38(9): 1167-1172 DOI： 10.3788/fgxb20173809.1167.

WANG Huai-pei, LIN Zhen-xu, SONG Jie etc. Strong Tunable Light Emission from Amorphous Silicon Oxycarbide Film[J]. Chinese Journal of Luminescence, 2017,38(9): 1167-1172 DOI： 10.3788/fgxb20173809.1167.

摘要

采用甚高频等离子体增强化学气相沉积技术，以SiH

、CH

和O

作为反应气源，通过调控O

流量在250℃下制备强光发射的非晶SiC

薄膜。利用光致发光光谱、荧光瞬态谱、Raman光谱、X射线光电子能谱及红外吸收谱对薄膜的光学性质和微结构进行表征与分析，进而讨论其可调可见光发射机制。实验结果表明，SiC

薄膜发光性质与薄膜中的氧组分密切相关。随着薄膜中氧组分的增加，其发光峰位由橙红光逐渐向蓝光移动，肉眼可见强的可见光发射。荧光瞬态谱分析表明，薄膜的荧光寿命在纳秒范围。结合X射线光电子能谱和红外吸收谱对薄膜的相结构和化学键合结构进行分析，结果表明薄膜的主要相结构和发光中心随O

流量的变化是其可调光发射的主要原因。

Abstract

The strong luminescent amorphous silicon oxycarbide (a-SiC

) films with different O content were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at 250℃ by using the gas mixture of SiH

and O

as the precursor. The effect of O content on the luminescent properties and structure of SiC

thin films was investigated. It is found that the increase of O content results in remarkable photoluminescence (PL) with orange-red to blue shifting emission

which can be clearly observed with the naked eyes in a bright room. The PL of the a-SiC

film is suggested from the nanoseconds recombination lifetime. The microstructure and the chemical compositions of the films were further investigated by Raman spectra

X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared absorption (FTIR) spectroscopy

respectively. Combining with the PL results and the analysis of the chemical bonds and microstructure present in the films

the main phase structure of the films and the change of the luminescent center with the O

flow rate are the main reasons for the tunable light emission.

关键词

光致发光碳氧化硅等离子增强化学气相沉积发光机制

Keywords

photoluminescencesilicon oxycarbideplasma enhance chemical vapor depositionphotoluminescence mechanism

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