Li+掺杂Sr2MgSi2O7:Eu2+,Dy3+长余辉材料的发光性能

肖玲; 周建; 刘桂珍

doi:10.3788/fgxb20173809.1143

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Li⁺掺杂Sr₂MgSi₂O₇:Eu²⁺,Dy³⁺长余辉材料的发光性能

材料合成及性能 | 更新时间：2020-08-12

- Li⁺掺杂Sr₂MgSi₂O₇:Eu²⁺,Dy³⁺长余辉材料的发光性能
- Luminescent Properties of Li⁺ doped Sr₂MgSi₂O₇:Eu²⁺,Dy³⁺ Phosphors
- 发光学报 2017年38卷第9期页码：1143-1148
- 作者机构：
  
  武汉理工大学材料复合新技术国家重点实验室,湖北武汉,430070
- 作者简介：
- 基金信息：
  
  国家自然科学基金（51172175，51072147）();广东省中山市重大科技专项（2014A2FC222）资助项目()
- DOI：10.3788/fgxb20173809.1143
  中图分类号： O482.31
- 纸质出版日期：2017-9-5，
  
  网络出版日期：2017-6-6，
  
  收稿日期：2017-2-9，
  
  修回日期：2017-3-24，
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肖玲, 周建, 刘桂珍. Li+掺杂Sr2MgSi2O7:Eu2+,Dy3+长余辉材料的发光性能[J]. 发光学报, 2017,38(9): 1143-1148

XIAO Ling, ZHOU Jian, LIU Gui-zhen. Luminescent Properties of Li+ doped Sr2MgSi2O7:Eu2+,Dy3+ Phosphors[J]. Chinese Journal of Luminescence, 2017,38(9): 1143-1148
肖玲, 周建, 刘桂珍. Li+掺杂Sr2MgSi2O7:Eu2+,Dy3+长余辉材料的发光性能[J]. 发光学报, 2017,38(9): 1143-1148 DOI： 10.3788/fgxb20173809.1143.

XIAO Ling, ZHOU Jian, LIU Gui-zhen. Luminescent Properties of Li+ doped Sr2MgSi2O7:Eu2+,Dy3+ Phosphors[J]. Chinese Journal of Luminescence, 2017,38(9): 1143-1148 DOI： 10.3788/fgxb20173809.1143.

摘要

采用高温固相法制备Li

掺杂Sr

MgSi

：Eu

，Dy

长余辉材料，对样品进行X射线衍射、扫描电镜、激发光谱、发射光谱、余辉衰减曲线和热释光曲线表征，研究了Li

掺杂对Sr

MgSi

：Eu

，Dy

发光性能的影响。实验结果表明：Li

掺杂对样品激发光谱和发射光谱的峰形、峰位基本没有影响，但是能改善样品的余辉性能。与未掺杂Li

的样品比较，Li

掺杂摩尔分数为2.5%样品的初始发光强度提高了1.5 倍，余辉衰减常数提高了1.6 倍。通过热释光曲线表征分析陷阱数量并计算了陷阱深度，分析表明，掺杂Li

能增加基质中氧空位的数量，适量增加陷阱深度，从而提高材料的发光性能。

Abstract

MgSi

:Eu

and Sr

MgSi

:Eu

phosphors were prepared by conventional solid state reaction method

and the influence of Li

doping on the luminescent properties of Sr

MgSi

:Eu

phosphors was studied. The samples were characterized by X-ray diffraction (XRD)

scanning electron microscope (SEM)

photoluminescence (PL)

decay curves

and thermoluminescence (TL). The results indicate that the incorporation of Li

ions has no influence on the position of the emission peak which is determined by 4f

of Eu

while it has relationships with the intensity of the emission and the afterglow. The highest phosphorescent intensity was observed with 2.5% of Li

and compared with the undoped sample

the phosphorescent intensity and the decay constant were increased by 1.5 and 1.6 times

respectively. By the characteristic of TL measurement

the number and the depth of trap level were analyzed. The doping of Li

can increase the number of oxygen vacancies and increase the trap depth

so as to improve the afterglow properties of phosphor.

关键词

Sr2MgSi2O7:Eu2+Dy3+Li+ 离子发光性能

Keywords

Sr2MgSi2O7:Eu2+Dy3+lithium ionluminescent properties

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