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1. 苏州大学 光电信息科学与工程学院, 苏州纳米科技协同创新中心,江苏 苏州,215006
2. 苏州大学 江苏省先进光学技术重点实验室, 教育部现代光学技术重点实验室,江苏 苏州,215006
3. 中国科学院物理研究所 北京凝聚态物理国家实验室 北京,100190
纸质出版日期:2017-8-5,
收稿日期:2017-1-19,
修回日期:2017-3-13,
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霍大云, 石震武, 徐超等. Be掺杂对InGaAsN/GaAs量子阱性能的提高[J]. 发光学报, 2017,38(8): 1056-1062
HUO Da-yun, SHI Zhen-wu, XU Chao etc. Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping[J]. Chinese Journal of Luminescence, 2017,38(8): 1056-1062
霍大云, 石震武, 徐超等. Be掺杂对InGaAsN/GaAs量子阱性能的提高[J]. 发光学报, 2017,38(8): 1056-1062 DOI: 10.3788/fgxb20173808.1056.
HUO Da-yun, SHI Zhen-wu, XU Chao etc. Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping[J]. Chinese Journal of Luminescence, 2017,38(8): 1056-1062 DOI: 10.3788/fgxb20173808.1056.
InGaAsN/GaAs量子阱中进行铍(Be)元素重掺杂能显著提高其光学性质,并且发光波长发生了红移。X射线衍射摇摆曲线清楚地证实了铍掺杂抑制了InGaAsN(Be)/GaAs量子阱在退火过程中的应力释放。对比退火前,退火后的没有进行铍掺杂的量子阱样品的量子阱的X射线摇摆曲线衍射峰明显向GaAs衬底峰偏移;而对于掺铍的量子阱样品而言,这样的偏移要小很多。
Heavily doping beryllium in the InGaAsN/GaAs QW during thermal annealing. An obvious XRD rocking curve peak shift of no-Be QW diffraction towards GaAs substrate peak before and after annealing was observed
while the shift for the Be-doped QW was much smaller than undoped QW.
稀氮化物分子束外延量子阱应变弛豫X射线衍射
dilute nitridemolecular beam epitaxyquantum wellstrain relaxationX-ray diffraction
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