Be掺杂对InGaAsN/GaAs量子阱性能的提高

霍大云; 石震武; 徐超; 邓长威; 陈晨; 陈林森; 王文新; 彭长四

doi:10.3788/fgxb20173808.1056

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Be掺杂对InGaAsN/GaAs量子阱性能的提高

器件制备及器件物理 | 更新时间：2020-08-12

- Be掺杂对InGaAsN/GaAs量子阱性能的提高
- Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping
- 发光学报 2017年38卷第8期页码：1056-1062
- 作者机构：
  
  1. 苏州大学光电信息科学与工程学院, 苏州纳米科技协同创新中心,江苏苏州,215006
  2. 苏州大学江苏省先进光学技术重点实验室, 教育部现代光学技术重点实验室,江苏苏州,215006
  3. 中国科学院物理研究所北京凝聚态物理国家实验室北京,100190
- 作者简介：
- 基金信息：
  
  国家自然科学基金（11504251，51302179）();江苏高校优势学科建设工程();科技部国际合作项目（2013DFG12210）();江苏省高校自然科学研究重大
- DOI：10.3788/fgxb20173808.1056
  中图分类号： O484.4
- 纸质出版日期：2017-8-5，
  
  收稿日期：2017-1-19，
  
  修回日期：2017-3-13，
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霍大云, 石震武, 徐超等. Be掺杂对InGaAsN/GaAs量子阱性能的提高[J]. 发光学报, 2017,38(8): 1056-1062

HUO Da-yun, SHI Zhen-wu, XU Chao etc. Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping[J]. Chinese Journal of Luminescence, 2017,38(8): 1056-1062
霍大云, 石震武, 徐超等. Be掺杂对InGaAsN/GaAs量子阱性能的提高[J]. 发光学报, 2017,38(8): 1056-1062 DOI： 10.3788/fgxb20173808.1056.

HUO Da-yun, SHI Zhen-wu, XU Chao etc. Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping[J]. Chinese Journal of Luminescence, 2017,38(8): 1056-1062 DOI： 10.3788/fgxb20173808.1056.

摘要

InGaAsN/GaAs量子阱中进行铍（Be）元素重掺杂能显著提高其光学性质，并且发光波长发生了红移。X射线衍射摇摆曲线清楚地证实了铍掺杂抑制了InGaAsN（Be）/GaAs量子阱在退火过程中的应力释放。对比退火前，退火后的没有进行铍掺杂的量子阱样品的量子阱的X射线摇摆曲线衍射峰明显向GaAs衬底峰偏移;而对于掺铍的量子阱样品而言，这样的偏移要小很多。

Abstract

Heavily doping beryllium in the InGaAsN/GaAs QW during thermal annealing. An obvious XRD rocking curve peak shift of no-Be QW diffraction towards GaAs substrate peak before and after annealing was observed

while the shift for the Be-doped QW was much smaller than undoped QW.

关键词

稀氮化物分子束外延量子阱应变弛豫X射线衍射

Keywords

dilute nitridemolecular beam epitaxyquantum wellstrain relaxationX-ray diffraction

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