红荧烯薄膜生长及稳定性的研究

张玉婷; 王卓; 孙洋; 闫闯; 尹丽; 孙丽晶; 李占国; 王丽娟

doi:10.3788/fgxb20173808.1047

您当前的位置：

首页 >

文章列表页 >

红荧烯薄膜生长及稳定性的研究

器件制备及器件物理 | 更新时间：2020-08-12

- 红荧烯薄膜生长及稳定性的研究
- Growth and Stability Properties of Rubrene Thin Films
- 发光学报 2017年38卷第8期页码：1047-1055
- 作者机构：
  
  1. 长春工业大学化学工程学院,吉林长春,130012
  2. 长春理工大学光电工程学院,吉林长春,130022
  3. 吉林省产品质量监督检验院,吉林长春,130000
- 作者简介：
- 基金信息：
  
  国家自然科学基金（21403016）();吉林省教育厅项目（2016326，2015174）资助()
- DOI：10.3788/fgxb20173808.1047
  中图分类号： TN32
- 纸质出版日期：2017-8-5，
  
  收稿日期：2017-1-5，
  
  修回日期：2017-2-13，
扫描看全文
张玉婷, 王卓, 孙洋等. 红荧烯薄膜生长及稳定性的研究[J]. 发光学报, 2017,38(8): 1047-1055

ZHANG Yu-ting, WANG Zhuo, SUN Yang etc. Growth and Stability Properties of Rubrene Thin Films[J]. Chinese Journal of Luminescence, 2017,38(8): 1047-1055
张玉婷, 王卓, 孙洋等. 红荧烯薄膜生长及稳定性的研究[J]. 发光学报, 2017,38(8): 1047-1055 DOI： 10.3788/fgxb20173808.1047.

ZHANG Yu-ting, WANG Zhuo, SUN Yang etc. Growth and Stability Properties of Rubrene Thin Films[J]. Chinese Journal of Luminescence, 2017,38(8): 1047-1055 DOI： 10.3788/fgxb20173808.1047.

摘要

利用原子力显微镜研究了二氧化硅衬底上红荧烯薄膜的生长及稳定性。在较低沉积速率下，较低衬底温度时，红荧烯分子有充足的扩散时间，利于薄膜的横向生长，形成连续性、均匀性较好的薄膜。快速蒸镀及较高衬底温度使红荧烯薄膜转变为纵向生长模式，形成团粒状岛。横向生长的红荧烯薄膜在退火和空气中表现为亚稳特性，随着退火温度的升高和空气中放置时间的延长，红荧烯分子会自发地进行质量传输，发生纵向转移，转变为团粒状岛。获得了二氧化硅界面上红荧烯薄膜的生长及亚稳定机制模型。研究结果证明红荧烯分子与二氧化硅界面之间的作用力小于红荧烯分子间的作用力。

Abstract

Growth and stability properties of rubrene thin films on silicon dioxide substrate were investigated by atomic force microscopy. At a low deposition rate and a low substrate temperature

the rubrene molecules have sufficient diffusion time for the horizontal growth of thin film

and the thin films with better continuity and uniformity can be obtained. However

at a fast evaporation rate and a high substrate temperature

the rubrene thin films change into vertical growth mode

and the dot islands are obtained. The rubrene thin films of horizontal growth show substability properties at annealing and ambient conditions. With the increase of annealing temperature and time under ambient conditions

the spontaneous mass transmission occurrs for the rubrene molecules. The vertical transfer occurrs and the thin films change into dot islands. The model of growth and substability properties of rubrene thin films on silicon dioxide substrate are obtained. The results imply that the force between rubrene molecules and silicon dioxide substrate is weaker than that among rubrene molecules.

关键词

红荧烯沉积速率衬底温度退火稳定性

Keywords

Rubrenedeposition ratesubstrate temperatureannealingstability

references

赵宇. 红荧烯单晶材料与器件的制备及特性研究[D]. 济南:山东大学, 2014. ZHAO Y. The Preparation and Characteristics of Rubrene Single Crystal Materials and Devices[D]. Jinan:Shandong University, 2014. (in Chinese)

TAKEYA J, YAMAGISHI M, TOMINARI Y, et al.. Very high-mobility organic single-crystal transistors with in-crystal conduction channels[J]. Appl. Phys. Lett., 2007, 90(10):102120-1-3.

ZEIS R, BESNARD C, SIEGRIST T, et al.. Field effect studies on rubrene and impurities of rubrene[J]. Chem. Mater., 2006, 18(2):244-248.

PODZOROV V, MENARD E, BORISSOV A, et al.. Intrinsic charge transport on the surface of organic semiconductors[J]. Phys. Rev. Lett., 2004, 93(8):086602-1-10.

REYES-MARTINEZ M A, CROSBY A J, BRISENO A L. Rubrene crystal field-effect mobility modulation via conducting channel wrinkling[J]. Nat. Commun., 2015, 6:6948-1-7.

BRISENO A L, MANNSFELD S C B, LING M M, et al.. Patterning organic single-crystal transistor arrays[J]. Nature, 2006, 444(7121):913-917.

JEONG S H, CHOI J M, HWANG D K, et al.. Enhanced mobility of rubrene thin-film transistors with a polymer dielectric on plastic substrate[J]. Electrochem. Solid-State Lett., 2007, 10(11):H321-H323.

LUO L, LIU G, HUANG L W, et al.. Solution-based patterned growth of rubrene nanocrystals for organic field effect transistors[J]. Appl. Phys. Lett., 2009, 95(26):263312-1-3.

QIAN X R, WANG T, YAN D H. Transparent organic thin-film transistors based on high quality polycrystalline rubrene film as active layers[J]. Org. Electron., 2013, 14(4):1052-1056.

YOON Y, KIM S, LEE H, et al.. Characterization of rubrene polycrystalline thin film transistors fabricated using various heat-treatment conditions[J]. Thin Solid Films, 2011, 519(16):5562-5566.

DU C, WANG W C, LI L Q, et al.. Growth of rubrene crystalline thin films using thermal annealing on DPPC LB monolayer[J]. Org. Electron., 2013, 14(10):2534-2539.

PARK S W, JEONG S H, CHOI J M, et al.. Rubrene polycrystalline transistor channel achieved through in situ vacuum annealing[J]. Appl. Phys. Lett., 2007, 91(3):033506-1-3.

ZENG X H, WANG L D, DUAN L, et al.. Homoepitaxy growth of well-ordered rubrene thin films[J]. Cryst. Growth Des., 2008, 8(5):1617-1622.

CAMPIONE M, MORET M, RAIMONDO L, et al.. Kinetic phase selection of rubrene heteroepitaxial domains[J]. J. Phys. Chem. C, 2009, 113(49):20927-20933.

CAMPIONE M. Rubrene heteroepitaxial nanostructures with unique orientation[J]. J. Phys. Chem. C, 2008, 112(42):16178-16181.

都昊, 邹凤君, 李一平, 等. -四噻吩薄膜的生长及性能研究[J]. 发光学报, 2015, 36(12):1445-1451. DU H, ZOU F J, LI Y P, et al.. Growth and performance of -quaterthiophene film[J]. Chin. J. Lumin., 2015, 36(12):1445-1451. (in Chinese)

李占国, 张玉婷, 谢强, 等. 基于p-6P异质诱导生长酞菁铜薄膜的NO2传感器[J]. 物理化学学报, 2016, 32(4):1005-1011. LI Z G, ZHANG Y T, XIE Q, et al.. NO2 sensors based on p-6P heterogametic induction growth of copper phthalocyanine thin films[J]. Acta Phys. Chim. Sin., 2016, 32(4):1005-1011. (in Chinese)

YANG J L, WANG T, WANG H B, et al.. Ultrathin-film growth of para -sexiphenyl (Ⅰ):submonolayer thin-film growth as a function of the substrate temperature[J]. J. Phys. Chem. B, 2008, 112(26):7816-7820.

QI Q, YU A F, JIANG P, et al.. Enhancement of carrier mobility in pentacene thin-film transistor on SiO2 by controlling the initial film growth modes[J]. Appl. Surf. Sci., 2009, 255(9):5096-5099.

RAIMONDO L, FUMAGALLI E, MORET M, et al.. Epitaxial interfaces in rubrene thin film heterostructures[J]. J. Phys. Chem. C, 2013, 117(27):13981-13988.

RIBI? P R, KALIHARI V, FRISBIE C D, et al.. Growth of ultrathin pentacene films on polymeric substrates[J]. Phys. Rev. B, 2009, 80:115307.

CHOI J M, JEONG S H, HWANG D K, et al.. Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface[J]. Org. Electron., 2009, 10(1):199-204.

WANG T, YAN D H. Ultrathin organic semiconductor films-Soft matter effect[J]. Adv. Colloid Interface Sci., 2014, 207:332-346.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

薄膜热处理对ZnO薄膜晶体管性能的提高

水系电解质离子对无定形WO₃电致变色性能的影响

基于芳香族配体的二维钙钛矿太阳能电池研究进展

有机发光二极管老化机制

OLED电子传输材料研究进展