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Pd颗粒表面修饰ZnO纳米线阵列的制备及其气敏特性
Preparation and Gas Sensing Characteristics of ZnO Nanowire Arrays Surface-decorated by Pd Particles
- 发光学报 2017年38卷第8期 页码：1033-1038
- 作者机构：
深圳大学 材料学院, 广东省功能材料界面工程技术研究中心, 深圳市特种功能材料重点实验室,广东 深圳,518060
- 作者简介：
- 基金信息：国家自然科学基金（51371120，51302174，61504083）();广东省自然科学基金（2016A030313060）();深圳市科技计划（JCYJ20150
DOI：10.3788/fgxb20173808.1033
中图分类号： O484.4;TP212.2纸质出版日期：2017-8-5，
收稿日期：2016-12-18，
修回日期：2017-2-10，
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杨志博, 曹培江, 韩舜等. Pd颗粒表面修饰ZnO纳米线阵列的制备及其气敏特性[J]. 发光学报, 2017,38(8): 1033-1038
YANG Zhi-bo, CAO Pei-jiang, HAN Shun etc. Preparation and Gas Sensing Characteristics of ZnO Nanowire Arrays Surface-decorated by Pd Particles[J]. Chinese Journal of Luminescence, 2017,38(8): 1033-1038
杨志博, 曹培江, 韩舜等. Pd颗粒表面修饰ZnO纳米线阵列的制备及其气敏特性[J]. 发光学报, 2017,38(8): 1033-1038 DOI： 10.3788/fgxb20173808.1033.
YANG Zhi-bo, CAO Pei-jiang, HAN Shun etc. Preparation and Gas Sensing Characteristics of ZnO Nanowire Arrays Surface-decorated by Pd Particles[J]. Chinese Journal of Luminescence, 2017,38(8): 1033-1038 DOI： 10.3788/fgxb20173808.1033.
摘要
采用化学气相沉积（CVD）方法在SiO
2
/Si衬底生长了ZnO纳米线阵列，纳米线长约为15 m，直径为100~500 nm。通过改变溅射沉积时间（0~150 s），在ZnO纳米线表面包覆了不同厚度的Pd薄膜。在Ar气氛中，经800℃高温退火后，制备出Pd颗粒表面修饰的ZnO纳米线阵列并对其进行了气敏测试。对于乙醇而言，所有传感器最佳工作温度均为280℃。溅射时间的增加（3~10 s）导致ZnO纳米线表面Pd纳米颗粒数量及尺寸增加，传感器响应值由2.0增至3.6。过长的溅射时间（30~150 s）将导致Pd颗粒尺寸急剧增大甚至形成连续膜，传感器响应度显著降低。所有传感器对H
2
均表现出相对较好的选择性，传感器具有较好的响应-恢复特性和稳定性。最后，探讨了Pd颗粒表面修饰对ZnO纳米线阵列气敏传感器气敏特性的影响机制。
Abstract
ZnO nanowire (NW) arrays were synthesized by chemical vapor deposition (CVD) method on SiO
2
/Si substrate. The Pd films with different sputtering time (0-150 s) were uniformly deposited on the surface of ZnO NWs and converted to Pd particles by annealing treatment at 800℃ in Ar gas
and then the gas sensing measurement was performed. The length of the NW is about 15 m and the diameter is 100-500 nm. For ethanol gas
the optimal working temperature of all gas sensors is 280℃. The increase of the sputtering time (from 3 to 10 s) induces the increase of the number and size of Pd particles
and the response of gas sensor raises from 2.0 to 3.6. Further increase of the sputtering time (from 30 to 150 s) leads to significant increase of the size of Pd particles and the formation of the continuous film
resulting in the significant decrease of the response. All the sensors exhibit the best gas selectivity to H
2
gas
and the better properties of the response and recovery time and the response stability are obtained. Finally
the influence mechanism of Pd particle surface decoration on the ZnO NW array gas sensors was discussed.
关键词
气敏特性ZnO纳米线Pd颗粒表面修饰
Keywords
gas sensingZnO nanowire arraysPd particlesurface decoration
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